@article{BiekerRoustaieSchlaaketal., author = {Bieker, Johannes and Roustaie, Farough and Schlaak, Helmut F. and Langer, Christoph and Schreiner, Rupert and Lotz, Marcel and Wilfert, Stefan}, title = {Field emission characterization of in situ deposited gold nanocones with variable cone densities}, series = {Journal of Vacuum Science and Technology B}, volume = {36}, journal = {Journal of Vacuum Science and Technology B}, number = {2}, publisher = {AIP Publishing}, doi = {10.1116/1.5009504}, abstract = {For the fabrication of field emitter cathodes with metallic nanocones, an in situ fabrication technique based on electrodeposition in an ion track etched polymer template was used. Three samples with nanocones made of gold and different cone densities were deposited on a circular electrode with a diameter of 2.5 mm, using templates with pore density of 6 × 104, 4 × 105, and 1 × 106 cones/cm2. The cones had a height of 24 μm, a base diameter between 3 and 3.75 μm, and a tip diameter below 500 nm. Integral field emission measurements revealed onset fields of down to 3.1 V/μm and average field enhancement factors of up to 1240. For one sample, the maximum emission current from the cathode reached 142.2 μA at an applied voltage of 338 V between cathode and extraction grid, which had a distance of 50 μm. To investigate the stability of the field emission current, cumulative long-term measurements were performed for over 50 h. A stable emission current of (31.0 ± 1.3) μA at an average applied voltage of 290 V (E = 5.8 V/μm) was observed. For currents above 100 μA, a decrease of the current and therefore a degradation of the emitter structures occurred.}, language = {en} } @inproceedings{DamsSchreiner, author = {Dams, Florian and Schreiner, Rupert}, title = {A high thermal resistance MEMS-based Pirani vacuum sensor chip}, series = {Smart sensors, actuators and MEMS VI : 24 - 26 April 2013, Grenoble, France / [part of SPIE microtechnologies]}, booktitle = {Smart sensors, actuators and MEMS VI : 24 - 26 April 2013, Grenoble, France / [part of SPIE microtechnologies]}, publisher = {SPIE}, address = {Bellingham, Wash.}, doi = {10.1117/12.2017345}, abstract = {The performance of thermal conductivity vacuum gauges can be improved by a well-designed geometry. The lower measurement range limit is determined by the size of the active sensing area and the thermal conduction heat losses through the supporting structures. The upper measurement range is limited by the distance between the heated element and the cold reference plane. Silicon based MEMS-technology gives the possibility to fabricate both sensing structures with suitable areas out of low thermal conductive materials and narrow gaps in order to extend the measurement range in both directions. In this work we present a MEMS-process to fabricate high thermal resistance sensor structures. The rectangular sensitive areas are anchored by four beams and are structured out of low thermal conductive PECVD-siliconnitride films with 1 µm in thickness. The metallic heating structure is completely embedded in the SiN-layer. Both sensitive area and its support beams were released from the silicon bulk material by anisotropic underetching. In this way a free-supporting structure with a gap of 150 μm to the silicon substrate was formed. The influence of the filament geometry and temperature was systematically investigated to determine the properties of the chips as thermal conductivity vacuum gauges. The temperature of the sensitive area was held constant by a self-balancing bridge circuit and the heating power was measured by a Δ-Σ-ADC. The average solid state thermal conductivity is in the order of 106WK1. The measuring range of the most sensitive structures covers 8 orders of magnitude from 105 mbar to 1000mbar.}, language = {en} } @misc{DuesbergBachmannEdleretal., author = {D{\"u}sberg, Felix and Bachmann, Michael and Edler, Simon and Pahlke, Andreas and Langer, Christoph and Prommesberger, Christian and Schreiner, Rupert and Bunert, Erik and Wendt, Cornelius and Zimmermann, Stefan}, title = {Novel Non-Radiative Electron Source}, series = {43rd International Symposium of Capillary Chromatography \& 16h GC x GC Symposium 2019}, journal = {43rd International Symposium of Capillary Chromatography \& 16h GC x GC Symposium 2019}, abstract = {Recently a non-radioactive electron capture detector based on a thermionic electron emitter has been demonstrated [1]. Using field emitter arrays (FEAs) would yield non-radioactive portable low power devices with fast switching capability. By combining FEAs with a vacuum-sealed housing and an electron transparent membrane window, such electron sources can be operated in an ambient pressure environment.}, language = {en} } @inproceedings{BerndtLindnerSchreineretal., author = {Berndt, Dominik and Lindner, Matthias and Schreiner, Rupert and Pipa, Andrei V. and Hink, R{\"u}diger and Brandenburg, Ronny and Foest, R{\"u}diger and Geils, Judith and Sander, Aljoscha and Hoffmann, Florian and Matz, Daniel and Baars, Albert and Kesel, Antonia and Max, Alexander and Caspari, Ralf}, title = {Realization of Multifunctional Surfaces Containing MEMS-based DBD Plasma Actuators and Biomimetic Structures for Flow Manipulation}, series = {AIAA Aviation 2019 Forum, 2019, Dallas}, booktitle = {AIAA Aviation 2019 Forum, 2019, Dallas}, publisher = {American Institute of Aeronautics and Astronautics, Inc}, doi = {10.2514/6.2019-2999}, language = {en} } @inproceedings{PrommesbergerLangerSchreiner, author = {Prommesberger, Christian and Langer, Christoph and Schreiner, Rupert}, title = {Stable and low noise field emission from single p-type Si-tips}, series = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, booktitle = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, publisher = {IEEE}, doi = {10.1109/IVNC.2018.8520018}, pages = {1-2}, abstract = {Single gated p-type Si-tips with two different tip radii were fabricated. An emission current of 2.40 μA was measured for the sharp-edged tip at a voltage of 170 V. In contrast, a stable and reproducible emission behavior was observed with an increased tip radius resulting in a pronounced saturation region between 90 V and 150 V, but merely an emission current of 0.55 μA at 150 V. More remarkable is the stable emission behavior with fluctuation of ± 4 \% during a measurement period of 30 minutes. The integral emission current in a homogeneous tip array (16 emitters) showed nearly the same I-V characteristics compared to the single tip and is therefore, most dominated by only a stable single tip in the array.}, language = {en} } @inproceedings{LindnerBerndtPrommesbergeretal., author = {Lindner, Matthias and Berndt, Dominik and Prommesberger, Christian and Langer, Christoph and Schreiner, Rupert}, title = {Field emission assisted micro plasma discharges at vacuum and atmospheric pressures}, series = {31st International Vacuum Nanoelectronics Conference (IVNC), 2018, Kyoto, Japan}, booktitle = {31st International Vacuum Nanoelectronics Conference (IVNC), 2018, Kyoto, Japan}, doi = {10.1109/IVNC.2018.8520181}, pages = {2}, abstract = {Spatially confined non-equilibrium plasmas at vacuum and atmospheric pressure in the dimensions from a few microns to one millimeter are a promising approach to the generation and maintenance of stable glow discharges. The realization of these micro-discharges or micro-plasmas enable more accurate investigations in the field of micro plasma research. We report on field emission assisted micro plasmas excited by an alternating current with frequencies up to 1 kHz. Due to the field enhancement caused by an array of Si nano-tip structures the ignition voltage of stable plasma discharges can be reduced by 30\%.}, language = {en} } @inproceedings{BerndtLindnerTschurtschenthaleretal., author = {Berndt, Dominik and Lindner, Matthias and Tschurtschenthaler, Karl and Langer, Christoph and Schreiner, Rupert}, title = {Miniaturized Plasma Actuator Flow Measurements by MEMS-Based Thermal Conductivity Sensors}, series = {MDPI Proceedings of Eurosensors 2018, 9-12 September, Graz}, volume = {Vol.13}, booktitle = {MDPI Proceedings of Eurosensors 2018, 9-12 September, Graz}, number = {2}, doi = {10.3390/proceedings2130939}, abstract = {The gasflow created by a minaturized dielectric barrier discharge (DBD) plasma actuator is measured by a MEMS-based thermal conductivity gas sensor giving an indication of flow velocity and flow direction. The possiblity of several sensors in a small area gives a far better accuracy of local flow phenomena compared to conventional sensors. This is important for a better understanding of plasma- induced flow characteristics.}, language = {en} } @inproceedings{EdlerHanschPrommesbergeretal., author = {Edler, Simon and Hansch, Walter and Prommesberger, Christian and Schreiner, Rupert}, title = {Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup}, series = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, booktitle = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, publisher = {IEEE}, doi = {10.1109/IVNC.2018.8520214}, pages = {1-2}, abstract = {The influence of residual gas pressure on the characteristics of black-Silicon field emitter arrays in a high voltage triode setup is investigated. I-Vcharacteristics at different pressure levels show a decrease of emission current with rising pressure. This can be explained by an increase of the work function and charging of the emitter surface due to adsorbates. The initial characteristics can be restored by heating the FEA up to 110 °C during electron emission. This regeneration procedure enables an extension of the lifetime from about 20 h to 440 h at a residual gas pressure of 10 -5 mbar.}, language = {en} } @article{BerndtMuggliWittweretal., author = {Berndt, Dominik and Muggli, Josef and Wittwer, Franz and Langer, Christoph and Heinrich, Stephan and Knittel, Thorsten and Schreiner, Rupert}, title = {MEMS-based thermal conductivity sensor for hydrogen gas detection in automotive applications}, series = {Sensors and Actuators A: Physical}, volume = {305}, journal = {Sensors and Actuators A: Physical}, number = {April}, publisher = {Elsevier}, doi = {10.1016/j.sna.2019.111670}, abstract = {Accurate detection of hydrogen gas in vehicle interiors is very important for the future of a fuel cell car. Since this type of gas is highly volatile and flammable, the measurement methods have to be very reliable and precise due to safety reasons. In this paper a thermal conductivity sensor for hydrogen gas detection is presented, exhibiting a lower detection limit of 2000 ppm hydrogen in laboratory air. The sensor element is realized by micro-fabrication techniques on silicon wafers. The heated filament is exposed by a selective wet etching process creating a micro-hotplate on a thin membrane. In order to minimize power consumption, the sensor is operated in pulsed mode. Hydrogen gas detection was carried out using a synthetic gas testbench. Measurements of hydrogen contents ranging from 0\% to 4\% with an increment of 0.5\% were successfully performed for ambient gas temperatures between -15°C and 84°C. Including humidity, high moisture contents have the greatest influence on thermal conductivity. This was predicted in theoretical investigations and confirmed in experiments. For evaluation, both the change in resistance ΔR as well as the time constant τ were taken as sensor output. For both quantities, the previously established theoretical relationship with thermal conductivity could be confirmed.}, language = {en} } @inproceedings{SilberbauerLindnerSchreiner, author = {Silberbauer, Theodor and Lindner, Matthias and Schreiner, Rupert}, title = {Charakterisierung der dielektrischen Barrierenentladung von Mikroplasmaaktuatoren in Abh{\"a}ngigkeit der Substratdicke}, series = {Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung : Fachbeitr{\"a}ge 2. Symposium Elektronik und Systemintegration ESI 2020}, booktitle = {Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung : Fachbeitr{\"a}ge 2. Symposium Elektronik und Systemintegration ESI 2020}, address = {Landshut}, pages = {64 -- 72}, language = {de} } @article{KrysztofMieraUrbańskietal., author = {Krysztof, Michał and Miera, Paweł and Urbański, Paweł and Grzebyk, Tomasz and Hausladen, Matthias and Schreiner, Rupert}, title = {Integrated silicon electron source for high vacuum microelectromechanical system devices}, series = {Journal of Vacuum Science \& Technology B}, volume = {42}, journal = {Journal of Vacuum Science \& Technology B}, number = {2}, publisher = {AIP Publishing}, issn = {2166-2746}, doi = {10.1116/6.0003385}, abstract = {The article presents the process of developing a silicon electron source designed for high-vacuum microelectromechanical system (HV MEMS) devices, i.e., MEMS electron microscope and MEMS x-ray source. Technological constraints and issues of such an electron source are explained. The transition from emitters made of carbon nanotubes to emitters made of pure silicon is described. Overall, the final electron source consists of a silicon tip emitter and a silicon gate electrode integrated on the same glass substrate. The source generates an electron beam without any carbon nanotube coverage. It generates a high and stable electron current and works after the final bonding process of an HV MEMS device.}, language = {en} } @article{SchreinerNaegeleKoerbletal., author = {Schreiner, Rupert and Naegele, Peter and K{\"o}rbl, M. and Groning, A. and Gentner, Jean-Louis and Schweizer, Heinz C.}, title = {Monolithically integrated tunable laterally coupled distributed-feedback lasers}, series = {Photonics Technology Letters}, volume = {13}, journal = {Photonics Technology Letters}, number = {12}, publisher = {IEEE}, doi = {10.1109/68.969880}, pages = {1277 -- 1279}, abstract = {A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 and 1595.2 nm.}, language = {en} } @inproceedings{BuchnerKaiserHausladenetal., author = {Buchner, Philipp and Kaiser, Alexander and Hausladen, Matthias and Bartl, Mathias and Bachmann, Michael and Schreiner, Rupert}, title = {Silicon Nanowire Field Emitters with Integrated Extraction Gates Using Benzocyclobutene as an Insulator}, series = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, booktitle = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, publisher = {IEEE}, doi = {10.1109/IVNC63480.2024.10652314}, pages = {1 -- 2}, abstract = {We are continuously improving the performance of our field emission electron sources. In this work a geometrically optimized design of electron sources with silicon nanowire field emitters on pillars was fabricated. This new design increased the packing density of the emitters by using a hexagonal arrangement of the pillars and a pillar spacing of 40 µm. Benzocyclobutene was used as the insulator material for an integrated (Cr/Ni) extraction gate. A modified fabrication process for the field emitters further improved reproducibility and reliability. An emission current of about 0.4 mA was measured for 30 minutes at an extraction voltage of 250 V and an anode voltage of 500 V. Electron transmission through the gate reached almost 100\%.}, language = {en} } @article{BerndtMuggliHeckeletal., author = {Berndt, Dominik and Muggli, Josef and Heckel, Robert and Rahiman, Mohd Fuad and Lindner, Matthias and Heinrich, Stephan and Pl{\"o}chinger, Heinz and Schreiner, Rupert}, title = {A Robust Miniaturized Gas Sensor for H₂ and CO₂ Detection Based on the 3ω Method}, series = {Sensors}, volume = {22}, journal = {Sensors}, number = {2}, publisher = {MDPI}, address = {Basel}, doi = {10.3390/s22020485}, pages = {1 -- 17}, abstract = {Gas concentration monitoring is essential in industrial or life science areas in order to address safety-relevant or process-related questions. Many of the sensors used in this context are based on the principle of thermal conductivity. The 3ω-method is a very accurate method to determine the thermal properties of materials. It has its origin in the thermal characterization of thin solid films. To date, there have been very few scientific investigations using this method to determine the thermal properties of gases and to apply it to gas measurement technology. In this article, we use two exemplary gases (H2 and CO2) for a systematical investigation of this method in the context of gas analysis. To perform our experiments, we use a robust, reliable sensing element that is already well established in vacuum measurement technology. This helix-shaped thin wire of tungsten exhibits high robustness against chemical and mechanical influences. Our setup features a compact measurement environment, where sensor operation and data acquisition are integrated into a single device. The experimental results show a good agreement with a simplified analytical model and FEM simulations. The sensor exhibits a lower detection limit of 0.62\% in the case of CO2, and only 0.062\% in case the of H2 at an excitation frequency of 1 Hz. This is one of the lowest values reported in literature for thermal conductivity H2 sensors.}, language = {en} } @article{SchreinerKoerblGraebeldingeretal., author = {Schreiner, Rupert and K{\"o}rbl, M. and Gr{\"a}beldinger, H. and Gentner, Jean-Louis and Schweizer, H.}, title = {Laterally gain-coupled 1.57 [micro sign]m DFB lasers with chromium surface grating and self-aligned Ti/Pt/Au ohmic contact}, series = {Electronics Letters}, volume = {36}, journal = {Electronics Letters}, number = {7}, publisher = {The Institution of Engineering and Technology, IET}, issn = {0013-5194}, doi = {10.1049/el:20000500}, pages = {636 -- 637}, abstract = {A simple method for fabricating gain coupled DFB lasers with lateral surface chromium Bragg gratings and self-aligned low capacitance ohmic contacts is reported. These InGaAsP/InP lasers show monomode emission with a sidemode suppression ratio of 40 dB. For 243 µm long devices a continuous wave threshold current of 17 mA was measured at room temperature.}, language = {en} } @article{SchreinerLangerPrommesbergeretal., author = {Schreiner, Rupert and Langer, Christoph and Prommesberger, Christian and Dams, Florian}, title = {Compact and Energy-Efficient Field Emission Cathodes for Sensor Applications}, series = {Advanced Materials Research}, volume = {1024}, journal = {Advanced Materials Research}, publisher = {Scientific.net}, doi = {10.4028/www.scientific.net/amr.1024.372}, pages = {372 -- 375}, abstract = {We report on miniaturized silicon field emitter arrays for the application in compact and energy-saving vacuum-microelectronic devices, e.g. sensors or x-ray tubes. Since standard silicon semiconductor technology has been used for the fabrication, they may be easily integrated with other silicon based circuits and devices on the same chip. The silicon tip geometry and the operating conditions were optimized in order to obtain highly uniform and stable electron field emission from large area cathode arrays. A series of uniform hexagonal tip arrays containing each 547 tips were fabricated and characterized. The electron emission properties of both individual tips as well as of complete emitter arrays were investigated. A saturation level in the voltage-current characteristics was found, which can be explained by the limitation of the supply of electrons due to the p-type silicon wafer material. When operating the arrays in the current saturation regime at an emission current of ~ 1 nA per tip, a highly stable and low noise emission can be observed.}, language = {en} } @inproceedings{HausladenBomkeBuchneretal., author = {Hausladen, Matthias and Bomke, Vitali and Buchner, Philipp and Bachmann, Michael and Knapek, Alexandr and Schreiner, Rupert}, title = {Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour}, series = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, booktitle = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, publisher = {IEEE}, address = {Piscataway, N.J.}, isbn = {978-1-6654-2589-6}, issn = {2380-6311}, doi = {10.1109/IVNC52431.2021.9600717}, abstract = {ensely packed emitters on a field emission array lead typically to mutual shielding. Taking biology as a role model for geometric arrangements could be a way to reduce this effect. For comparison, two electron sources, one with a spiral and a second with conventional rectangular (orthogonal) arranged emitters, were fabricated and investigated. Emission currents of 6 µA in the spiral ordered array and 120 µA in the rectangular array were reached with an extraction voltage of 400 V. From a mid-term measurement over 1 h a current stability of ±8.8 \% (spiral) respectively ±5.7 \% (rectangular) with a mean degradation of -3.0 µA/h (spiral) and -0.12 µA/h (rectangular) could be observed.}, language = {en} } @inproceedings{BuchnerBomkeHausladenetal., author = {Buchner, Philipp and Bomke, Vitali and Hausladen, Matthias and Edler, Simon and Bachmann, Michael and Schreiner, Rupert}, title = {Investigation on the Emission Behaviour of p-doped Silicon Field Emission Arrays with Individually Controllable Single Tips}, series = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, booktitle = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, publisher = {IEEE}, isbn = {978-1-6654-2589-6}, doi = {10.1109/IVNC52431.2021.9600756}, pages = {1 -- 2}, abstract = {Four individually controllable emission tips consisting of <111> p-Type silicon, were structured on a glass substrate by laser ablation. A matching extraction grid was manufactured in the same manner and aligned with the emitters. The resulting samples were characterized in ultra-high vacuum. As expected, the individual currents show a strong saturation and in the saturation region a considerably lower current fluctuation than n-type silicon due to charge carrier depletion. The individual tips behave completely independent behaviour from each other and the overall emission can be deduced from the sum of the currents through the individual tips.}, language = {en} } @inproceedings{HechtBauereiβSellmairetal., author = {Hecht, Fabian and Bauereiβ, Florian and Sellmair, Josef and Buchner, Philipp and Hausladen, Matthias and Schreiner, Rupert}, title = {Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188960}, pages = {160 -- 162}, abstract = {In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).}, language = {en} } @inproceedings{AllahamBuchnerSchreineretal., author = {Allaham, Mohammad M. and Buchner, Philipp and Schreiner, Rupert and Kn{\´a}pek, Alexandr}, title = {Testing the performance of Murphy-Good plots when applied to current-voltage characteristics of Si field electron emission tips}, series = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France}, booktitle = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France}, publisher = {IEEE}, doi = {10.1109/IVNC52431.2021.9600690}, pages = {1 -- 2}, abstract = {Murphy-Good plots are the most recent type of the analysis methods in the field electron emission theory, this type of plots has several useful characteristics such as: having the very-nearly straight line to represent the current-voltage characteristics and the absence of the correction factors in the mathematical procedure of the analysis process. In this study, n-type <111> and <100> Si chips containing four individual emitters are used as base emitters and mounted in a diode configuration field emission setup where the experiments are operated in an ultra-high vacuum ( 10-7 Pa). Each chip has four individual controllable emitters with 5 µm distance between the Si tips and the same material grid. Laser micromachining and subsequent wet chemical etching technique is used to structure and polish the tips. Murphy-Good plots are used to study the behavior of the Si individual tips and compare the results with the array current by extracting the field emission characterization parameters of the emitters.}, language = {en} } @inproceedings{ZhengFuhrmannXuetal., author = {Zheng, Jihong and Fuhrmann, Thomas and Xu, Boqing and Schreiner, Rupert and Jia, Hongzhi and Zhang, Wei and Wang, Ning and Seebauer, Gudrun and Zhu, Jiyan}, title = {Curriculum design and German student exchange for Sino-German Bachelor program majored in optoelectronics engineering}, series = {14th Conference on Education and Training in Optics and Photonics (ETOP 2017), 29-31.05.2017, Hangzhou, China, 29-31.05.2017}, booktitle = {14th Conference on Education and Training in Optics and Photonics (ETOP 2017), 29-31.05.2017, Hangzhou, China, 29-31.05.2017}, publisher = {SPIE}, doi = {10.1117/12.2269574}, pages = {134}, abstract = {Different higher education backgrounds in China and Germany led to challenges in the curriculum design at the beginning of our cooperative bachelor program in Optoelectronics Engineering. We see challenges in different subject requirements from both sides and in the German language requirements for Chinese students. The curriculum was optimized according to the AS IIN criteria, which makes it acceptable and und erstandable by both countries. German students are integrated into the Chinese class and get the sa me lectures like their Chinese colleagues. Intercultural and curriculum challenges are successfully solved. The results are summarized to provide an example for other similar international programs.}, language = {en} } @inproceedings{BiekerRoustaieLangeretal., author = {Bieker, Johannes and Roustaie, Farough and Langer, Christoph and Schreiner, Rupert and Schlaak, Helmut F.}, title = {Innovatives Verfahren zur Herstellung und Integration metallischer Nanokonen f{\"u}r die Feldemission}, series = {MikroSystemTechnik Kongress 2017 : MEMS, Mikroelektronik, Systeme 23.-25. Oktober 2017 in M{\"u}nchen}, booktitle = {MikroSystemTechnik Kongress 2017 : MEMS, Mikroelektronik, Systeme 23.-25. Oktober 2017 in M{\"u}nchen}, number = {CD-ROM}, publisher = {VDE-Verlag}, address = {M{\"u}nchen}, isbn = {978-3-8007-4491-6}, pages = {797 -- 800}, abstract = {In den letzten Jahren wurde am Institut f{\"u}r Elektromechanische Konstruktionen die Fabrikation und Integration von metallischen Nanodr{\"a}hten und Nanokonen mittels Template-basierter Abscheidung erforscht. Diese Variante der in-situ Abscheidung von metallischen Nanostrukturen bietet eine Vielzahl von Anwendungsm{\"o}glichkeiten. Im Rahmen dieses Beitrags werden das Herstellungsverfahren zur Herstellung metallischer Nanokonen vorgestellt. Dies beinhaltet sowohl die Templatepr{\"a}paration mittels asymmetrischen {\"A}tzens als auch die anschließende Integration mittels galvanischer Abscheidung. Eine Anwendung der metallischen Nanokonen stellt die Verwendung als Feldemitter in der Vakuumelektronik dar. Es werden erste Messungen der Langzeitstabilit{\"a}t des Feldemissionsstromes der metallischen Konen pr{\"a}sentiert.}, language = {de} } @inproceedings{RahimanBerndtSchreiner, author = {Rahiman, Mohd Fuad and Berndt, Dominik and Schreiner, Rupert}, title = {Micro-wire Pirani with temperature-stabilized Environment}, series = {3. Symposium Elektronik und Systemintegration ESI 2022: 06. April 2022, Hochschule Landshut}, booktitle = {3. Symposium Elektronik und Systemintegration ESI 2022: 06. April 2022, Hochschule Landshut}, isbn = {978-3-9818439-7-2}, pages = {52 -- 59}, language = {en} } @misc{Schreiner, author = {Schreiner, Rupert}, title = {Miniaturized sensor and actuator elements based on the heat transport in gases or the ionization of gas particles}, series = {16th International Conference on Optical and Electronic Sensors, COE'2020, 29 March - 2 April 2020, Krakow, Poland (online)}, journal = {16th International Conference on Optical and Electronic Sensors, COE'2020, 29 March - 2 April 2020, Krakow, Poland (online)}, language = {en} } @inproceedings{KleshchSerbunOrekhovetal., author = {Kleshch, Victor I. and Serbun, Pavel and Orekhov, Anton and L{\"u}tzenkirchen-Hecht, Dirk and Obraztsov, Alexander N. and Prommesberger, Christian and Langer, Christoph and Schreiner, Rupert and Lutzenkirchen-Hecht, Dirk}, title = {Field emission properties of p-type silicon tips decorated with tungsten nanoparticles}, series = {2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany}, booktitle = {2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany}, publisher = {IEEE}, doi = {10.1109/IVNC.2017.8051580}, pages = {138 -- 139}, abstract = {An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by a tungsten-needle anode positioned above the tip apex. Tips decorated with tungsten nanoparticles demonstrated a smaller saturation region in current-voltage characteristics compared to the pristine tips. An emission activation process, which consisted in sudden current increase at certain value of applied voltage, was observed for the decorated silicon tips. This behavior was explained by the formation of vertical protrusions extending from the metal particles revealed by scanning electron microscopy after field emission experiments.}, language = {en} } @inproceedings{WickLindnerZimmeretal., author = {Wick, Michael and Lindner, Gerhard and Zimmer, Katja and Schreiner, Rupert and Fuhrmann, Thomas and Seebauer, Gudrun and Xu, Boqing and Zheng, Jihong and Wang, Ning}, title = {German-Chinese cooperative Bachelor in engineering physics/optoelectronics}, series = {14th Conference on Education and Training in Optics and Photonics: ETOP 2017; Hangzhou, China 29.05.2017 - 31.05.2017}, booktitle = {14th Conference on Education and Training in Optics and Photonics: ETOP 2017; Hangzhou, China 29.05.2017 - 31.05.2017}, editor = {Liu, Xu and Zhang, Xi-Cheng}, publisher = {SPIE}, isbn = {9781510613812}, doi = {10.1117/12.2269943}, abstract = {The University of Shanghai for Science and Technology (USST), the Coburg University of Applied Sciences and Arts (CUASA) and the OTH Regensburg, University of Applied Sciences (OTHR) established an English taught international cooperative bachelor program in the area of Engineering Physics/Optoelectronics. Students from China study their first four semesters at USST. They continue their studies in Germany for the last three semesters, including an internship and a bachelor thesis, graduating with a Chinese and a German bachelor degree. Students from Germany study their third and fourth semester at USST to gain international experience. While the first cohort of Chinese students is currently in Germany, the second cohort of German students is in Shanghai. Up to now the feedback regarding this study program is completely positive, thus it is planned to develop it further.}, language = {en} } @inproceedings{KnappLangerPrommesbergeretal., author = {Knapp, Wolfram and Langer, Christoph and Prommesberger, Christian and Lindner, Matthias and Schreiner, Rupert}, title = {Investigations of the transition from field electron emission to stable plasma discharge in a micro electron source at vacuum pressure}, series = {2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany}, booktitle = {2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany}, publisher = {IEEE}, doi = {10.1109/IVNC.2017.8051594}, pages = {166 -- 167}, abstract = {We report on the transition from field electron emission to plasma discharges. During an experiment with a miniaturized field emission electron source a plasma discharge accompanied by a luminous effect was observed. A novel graphical evaluation method was used to interpret and to compare the observed phenomenon.}, language = {en} } @article{SchreinerSchweizer, author = {Schreiner, Rupert and Schweizer, Heinz C.}, title = {High-frequency operation of 1.57-μm laterally coupled distributed feedback lasers with self-aligned ohmic contacts and nickel surface gratings}, series = {IEEE Journal of Selected Topics in Quantum Electronics}, volume = {9}, journal = {IEEE Journal of Selected Topics in Quantum Electronics}, number = {5}, publisher = {IEEE}, doi = {10.1109/JSTQE.2003.819469}, pages = {1179 -- 1182}, abstract = {Laterally coupled distributed feedback lasers with self-aligned ohmic contacts show the advantage of a considerably simplified fabrication process. These lasers exhibit superior spectral properties with full benefit from the gain coupling mechanism. Side-mode suppression ratios up to 55- and 3-dB bandwidths beyond 15 GHz were obtained for these devices.}, language = {en} } @article{DamsSchreiner, author = {Dams, Florian and Schreiner, Rupert}, title = {Influencing factors on the sensitivity of MEMS-based thermal conductivity vacuum gauges}, series = {Journal of vacuum science \& technology A}, volume = {32}, journal = {Journal of vacuum science \& technology A}, number = {3}, publisher = {AVS}, doi = {10.1116/1.4867486}, abstract = {The measurement range of thermal conductivity vacuum gauges is mainly influenced by the sensitivity of the sensing element to variations in pressure. An enhanced definition of sensitivity shows its theoretical dependence on the geometric measures of the sensor element at the whole pressure range. This value gives the possibility of direct comparison between different types of sensor structures without the influence of the operating conditions. To study the influencing factors, sensor chips with heated surfaces in the order of some tens of mm 2 were realized by microelectromechanical systems-based fabrication techniques. By a silicon-glass hybrid process two cold planes were formed in a distance of 150 mu m above and below the heated element. The thermal conductance of devices with different geometric measures was determined in constant temperature operating mode by usage of embedded measurement equipment. In this configuration the sensor signals were sensitive to pressure in a region from 10(-5) mbar. The sensitivity was extracted by a fit of the theoretical model to the measurement data and showed the predicted dependencies on the geometric measures. (C) 2014 American Vacuum Society.}, language = {en} } @article{DamsNavitskiPrommesbergeretal., author = {Dams, Florian and Navitski, Aliaksandr and Prommesberger, Christian and Serbun, Pavel and Langer, Christoph and M{\"u}ller, G{\"u}nter and Schreiner, Rupert}, title = {Homogeneous Field Emission Cathodes With Precisely Adjustable Geometry Fabricated by Silicon Technology}, series = {IEEE Transactions on Electron Devices}, volume = {59}, journal = {IEEE Transactions on Electron Devices}, number = {10}, publisher = {IEEE}, issn = {0018-9383}, doi = {10.1109/TED.2012.2206598}, pages = {2832 -- 2837}, abstract = {Silicon-based cathodes with precisely aligned field emitter arrays of sharp tips applicable for miniaturized electron sources were successfully fabricated and characterized. This was made possible by an improved fabrication process using wet thermal oxidation, wet etching, and reactive-ion etching steps with adjustable anisotropy. As substrate materials, both p-doped silicon and n-doped silicon were used. The cathode chips contain about 3 × 10 5 Si tips/cm 2 in a triangular array with tip heights of 2.5 μm, tip radii of less than 30 nm, and spacing of 20 μm. Well-aligned field emission (FE) and excellent homogeneity from all tips (i.e., 100\% efficiency) and maximum stable currents of typically 0.1 μA (0.6 μA) for p (n)-type Si were reproducibly achieved. The current-voltage characteristics of the p-Si tips exhibit the expected saturation at around 10 nA with around ten times better current stability, whereas the n-Si tips show the usual Fowler-Nordheim behavior. Additional coating of the Si tips with 5-nm Cr and 10-nm Au layers resulted in improved stability and at least five times higher average FE current limits (about 3 μA) at about 30\% higher operation voltage.}, language = {en} } @article{TanYeapChowetal., author = {Tan, Pi Lin and Yeap, Guan Yeow and Chow, Wen Shyang and Schreiner, Rupert and Cheong, Kuan Yew}, title = {Effect of Thickness of Porphyrin on Electrical Properties of Organic Devices}, series = {Advanced Materials Research (AMR)}, volume = {1024}, journal = {Advanced Materials Research (AMR)}, publisher = {Trans Tech Publications Ltd.}, address = {Baech}, issn = {1662-8985}, doi = {10.4028/www.scientific.net/AMR.1024.381}, pages = {381 -- 384}, abstract = {The study on electrical properties for both 2,3,7,8,12,13,17,18-octaethyl-21,23H-porphine Cu (II) (Cu-porphyrin) and 2,3,7,8,12,13,17,18-octaethyl-21,23H-porphine (porphyrin) thin film, which were fabricated using spin coating method was conducted. Porphyrins were diluted with chloroform of various concentrations (0.05 mg/ml, 0.1 mg/ml, 0.5 mg/ml, 2.0 mg/ml and 3.0 mg/ml). The solution was spin coated on top of glass substrates. A layer of aluminum was evaporated on top of the organic thin film through thermal evaporation and shadow mask was placed on top of the organic thin film where two electrodes with a gap of 50 μm were formed. Surface morphology of the organic thin film was observed by scanning electron microscope (SEM) and profilometer. Different concentrations of organic solutions greatly affected the molecular packing and arrangement order of the organic thin film and thickness of the organic layer and eventually affected electrical properties of the devices.}, language = {en} } @article{LangerBerndtSchreiner, author = {Langer, Christoph and Berndt, Dominik and Schreiner, Rupert}, title = {Sensitivity of thermal conductivity vacuum gauges for constant current and constant temperature operation}, series = {Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics}, volume = {40}, journal = {Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics}, number = {5}, publisher = {AIP Publishing}, doi = {10.1116/6.0001964}, abstract = {To optimize the measurement range of thermal conductivity vacuum gauges, an expression for the sensitivity is required that takes into account all geometrical, material-specific, and operating parameters. Therefore, equations of the sensor output signal as a function of the pressure for the constant current and the constant temperature mode have been developed analytically. Based on these equations, the sensitivity of the vacuum gauge and its influencing parameters was investigated and discussed. For comparable conditions, the constant temperature operation shows a significantly higher sensitivity for high pressures, while the constant current operation shows higher sensitivity at low pressures. The sensitivity in both the constant current and the constant temperature mode depends on the ratio of the filament surface area and the parasitic thermal conductance. In addition, for the constant current operation, the sensitivity also depends on the current value and the temperature coefficient of the filament resistor. For the constant temperature operation, the sensitivity additionally depends on the distance of the filament and the reference plane. However, to extend the measurement range of a thermal conductivity vacuum gauge toward low pressures, a reduction of the parasitic thermal conductance is mandatory for both the constant current and the constant temperature mode.}, language = {en} } @inproceedings{DamsPrommesbergerSchreiner, author = {Dams, Florian and Prommesberger, Christian and Schreiner, Rupert}, title = {Fabrication process of silicon-tip-arrays for field emission applications}, series = {24th International Vacuum Nanoelectronics Conference (IVNC), 2011 : 18 - 22 July 2011, Historische Stadthalle Wuppertal, Germany}, booktitle = {24th International Vacuum Nanoelectronics Conference (IVNC), 2011 : 18 - 22 July 2011, Historische Stadthalle Wuppertal, Germany}, publisher = {IEEE}, isbn = {978-3-00-035081-8}, issn = {2380-6311}, pages = {49 -- 50}, abstract = {A micromachined process to assemble homogeneous and reproducible tip arrays for field emission applications is developed and characterized. As substrate material p- as well as n-doped silicon is used. Lateral position of the tips is defined by structuring silicon dioxide to discs in a photolithographic process. Vertical structure of the tips is defined by a combination of RIE dry etching with controlled anisotropy and thermally oxidization of silicon in order to sharpen the tips. Hence field emitter arrays (FEAs) can be assembled both as bare and coated cathodes. To assemble field emission diodes, this fabrication process allows placing a metal anode in a micrometer order distance to the tips by a self-aligning procedure. The anode is placed in an evaporation process whereupon sharpening oxide is used as isolator between anode and cathode. Electrical characterization of the cathodes showed very good homogeneity, well alignment and stability over time of emission current from all tips (i.e. 100\% efficiency).}, language = {en} } @inproceedings{SchreinerMulotWiedmannetal., author = {Schreiner, Rupert and Mulot, M. and Wiedmann, J{\"o}rg and Coenning, W. and Porsche, J. and Gentner, Jean-Louis and Berroth, Manfred and Scholz, Ferdinand and Schwizer, H.}, title = {Dynamic measurements on narrow linewidth complex coupled 1.55 μm DFB lasers with gain and index grating in antiphase}, series = {Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99), 16-20 May 1999, Davos, Switzerland}, booktitle = {Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99), 16-20 May 1999, Davos, Switzerland}, publisher = {IEEE}, address = {Piscataway}, isbn = {0-7803-5562-8}, doi = {10.1109/ICIPRM.1999.773626}, pages = {25 -- 28}, abstract = {We report on dynamic measurements on antiphase complex coupled 1.55 /spl mu/m DFB lasers. The antiphase complex coupling mechanism is realized by periodically etching the active layer and quarternary InGaAsP overgrowth. This new fabrication approach results in very narrow linewidths measured on devices with rather short resonator lengths. The minimum linewidth for a 375 /spl mu/m long ridge waveguide laser was only 250 kHz at an optical output power of 4 mW. The RC-limited 3dB-bandwidth for those devices was /spl sim/6 GHz. Using circuit model corrections, the intrinsic bandwidth limitation of those lasers was found to be 17.4 GHz.}, language = {en} } @inproceedings{SchreinerNaegeleKoerbletal., author = {Schreiner, Rupert and Naegele, Peter and Koerbl, Michael and Groening, Albert and Gentner, Jean-Louis and Schweizer, Heinz C.}, title = {Monolithically integrated tunable laterally-coupled distributed feedback lasers with self-aligned Ti/Pt/Au ohmic contacts}, series = {Proceedings Volume 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication SystemsSemiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems}, booktitle = {Proceedings Volume 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication SystemsSemiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems}, editor = {Mirin, Richard P. and Menoni, Carmen S.}, publisher = {SPIE}, doi = {10.1117/12.457281}, pages = {160}, abstract = {We present a new method for fabrication of tunable InGaAsP-InP single mode lasers without epitaxial overgrowth. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. To overcome the extensive and expensive overgrowth step we realized a surface grating on both sides of the ridge mesa, which provides DFB operation. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 nm and 1595.2 nm. A maximum of 11 wavelength channels with an average spacing of ~0.5 nm and a constant optical output power of ~0.5 mW are addressable.}, language = {en} } @article{CheongAwKarimovetal., author = {Cheong, Kuan Yew and Aw, Kean and Karimov, Khasan S. and Zhao, Feng and Mahroof-Tahir, Mohammad and Schreiner, Rupert}, title = {Advances in Smart Materials and Applications}, series = {Advances in Materials Science and Engineering}, journal = {Advances in Materials Science and Engineering}, publisher = {Hindawi}, doi = {10.1155/2014/517342}, abstract = {This is one of a series of special issues published in Advances in Materials Science and Engineering, focusing on the latest advances of smart materials and their applications. Evolution of engineering materials is strongly depending on the growing transformation of complexity in engineering products. New materials being designed are required to provide specific properties and demonstrate certain functional characteristics by manipulating their dimension, chemistry, and structure through various advanced technologies. Therefore, "smartness" of a material has become the topic of interest. Properties of smart materials may change accordingly to the applied external stimuli. Under the direction of the editorial team, we showcase advances of organic and inorganic based smart materials and their applications in areas of specific interest such as energy, environment, and health. A total of 9 articles are published in this special issue. Six articles are focused on production, synthesis, and optimization of smart materials; and the remaining are dedicated to application of smart materials.}, language = {en} } @inproceedings{SaravananGerlachPeschkeetal., author = {Saravanan, Brem Kumar and Gerlach, Philipp and Peschke, Martin and Knoedl, Thomas and Schreiner, Rupert and Hanke, Christian and Stegmueller, Bernhard}, title = {Integrated DFB laser electro-absorption modulator based on identical MQW-double stack active layer for high-speed modulation beyond 10 GBIT/S}, series = {16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 31 May - 04 June 2004, Kagoshima, Japan}, booktitle = {16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 31 May - 04 June 2004, Kagoshima, Japan}, publisher = {IEEE}, isbn = {0-7803-8595-0}, doi = {10.1109/ICIPRM.2004.1442656}, pages = {236 -- 238}, abstract = {Integrated DFBLD-EAM-SOA devices utilizing an identical MQW active region have been realized in the AlGaInAs/InP material system. A fiber-coupled optical power of >6 mW with a 10 dB static extinction, 44 dB SMSR single-mode spectrum and a 3 dBe cutoff frequency of 25 GHz was measured.}, language = {en} } @article{ZahnerSchreinerStierstorferetal., author = {Zahner, Th and Schreiner, Rupert and Stierstorfer, R. and Kus, O. and Li, S. T. and Roessler, R. and Pedarnig, J. D. and B{\"a}uerle, D. and Lengfellner, H.}, title = {Off-diagonal Seebeck effect and anisotropic thermopower in Bi2Sr2CaCu2O8 thin films}, series = {Europhysics Letters}, volume = {40}, journal = {Europhysics Letters}, number = {6}, publisher = {IOP Sciences}, doi = {10.1209/epl/i1997-00521-4}, pages = {673 -- 678}, abstract = {The anisotropy ΔS of the thermopower in thin films of the high-Tc superconductor Bi2Sr2CaCu2O8 is investigated using off-c-axis epitaxial film growth and the off-diagonal Seebeck effect. The measurements represent a new method for the investigation of anisotropic transport properties in solids, taking advantage of the availability of oriented grown crystalline thin films instead of using bulk crystals. First results for the temperature dependence ΔS(T) in Bi2Sr2CaCu2O8 thin films are presented and described within a two-band model. Subjecting the films to heat treatments in different gases at relatively low temperatures, ΔS could reversibly be changed in a wide range.}, language = {en} } @inproceedings{KnodlHankeSaravananetal., author = {Knodl, Thomas and Hanke, Christian and Saravanan, Brem Kumar and Peschke, Martin and Schreiner, Rupert and Stegmuller, Bernhard}, title = {Integrated 1.3-μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure}, series = {Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits}, booktitle = {Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits}, editor = {Righini, Giancarlo C. and Honkanen, Seppo}, publisher = {SPIE}, doi = {10.1117/12.544610}, pages = {1}, abstract = {We present first experimental results of the successful transfer of our monolithic integrated double-stack multi quantum well laser-modulator approach from the traditional InGaAsP/InP to the more promising InGaAlAs/InP material system. In continuous wave operation at room temperature, the devices achieved threshold currents of <21 mA, fiber coupled optical power levels up to 570 μW and static extinction ratios in the range of 15 dB/V. The measured small-signal modulation bandwidth of about 10 GHz is capacitance limited due to a conservative device layout.}, language = {en} } @inproceedings{SchreinerGrabeldingerWiedmannetal., author = {Schreiner, Rupert and Grabeldinger, H. and Wiedmann, J. and Wunstel, K. and Porsche, J. and Scholz, Ferdinand and Schweizer, H.}, title = {Complex coupled 1.55 mu m tunable super-grating DFB lasers and photonic filters}, series = {Compound semiconductors 1999 : proceedings of the Twenty-Sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22 - 26 August 1999}, booktitle = {Compound semiconductors 1999 : proceedings of the Twenty-Sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22 - 26 August 1999}, publisher = {Inst. of Physics Publ.}, address = {Bristol [u.a.]}, isbn = {0-7503-0704-8}, abstract = {We report on the investigation and realization of photonic filters based on the combination of fractional compositions of a few basic grating periods. Using a minimum set of two basic periods Lambda(1) and Lambda(2) we demonstrate comb-like few mode photonic band gap structures with arbitrary numbers of bands and frequency spacing between the bands. Optically integrated filters of different comb periods result in switchable wavelength filters for channel selection in WDM applications.}, language = {en} } @inproceedings{SchreinerSchweizer, author = {Schreiner, Rupert and Schweizer, Heinz C.}, title = {High frequency operation of 1.57 μm laterally gain coupled DFB lasers with self aligned ohmic contacts and nickel surface gratings}, series = {IEEE 18th International Semiconductor Laser Conference; 29 Sept.-3 Oct. 2002, Garmisch, Germany}, booktitle = {IEEE 18th International Semiconductor Laser Conference; 29 Sept.-3 Oct. 2002, Garmisch, Germany}, publisher = {IEEE}, isbn = {0-7803-7598-X}, doi = {10.1109/ISLC.2002.1041099}, pages = {21 -- 22}, abstract = {Laterally coupled DFB lasers with self-aligned ohmic contacts show the advantage of a, considerably simplified fabrication process. Side-mode-suppresion-ratios up to 55 dB and 3 dB-bandwidths beyond 15 GHz were obtained for these devices.}, language = {en} } @inproceedings{PodstranskyHausladenZlamaletal., author = {Podstr{\´a}nsk{\´y}, J{\´a}chym and Hausladen, Matthias and Zl{\´a}mal, Jakub and Kn{\´a}pek, Alexandr and Schreiner, Rupert}, title = {Single Column Multiple Electron Beam Imaging from N-Type Silicon}, series = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, booktitle = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, publisher = {IEEE}, isbn = {979-8-3503-7976-1}, doi = {10.1109/IVNC63480.2024.10652470}, pages = {1 -- 2}, abstract = {This work is aimed at measuring the electron emission from multiple cathodes formed by n-doped silicon and imaging the electron beams focused by an einzel lens on a CMOS camera. The experimental results are compared with computer simulation to understand the electron emission from the semiconductor cathode and the observed imaging imperfections. Finally, modifications to the experimental setup are suggested that should lead to improvement in the extraction current and spot size of focused electron beams and also better understanding of the processes taking place in the experiment.}, language = {en} } @article{SchmidtDenkerDashielletal., author = {Schmidt, Oliver G. and Denker, Ullrich and Dashiell, Michael W. and Jin-Phillipp, Neng Yun and Eberl, Karl and Schreiner, Rupert and Gr{\"a}beldinger, Hedwig and Schweizer, Heinz C. and Christiansen, Silke H. and Ernst, Frank}, title = {Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors}, series = {Materials Science and Engineering B}, volume = {89}, journal = {Materials Science and Engineering B}, number = {1-3}, publisher = {Elsevier}, address = {New York, NY}, issn = {1873-4944}, doi = {10.1016/S0921-5107(01)00810-8}, pages = {101 -- 105}, abstract = {Self-assembled and coherently strained Ge dots were grown on a Si/SiGe superlattice, which was deposited on a flat Si(001) substrate surface patterned with a regular array of straight trenches. The superlattice translates the surface modulation of the substrate into a strain-field modulation, which causes the Ge dots on its surface to form along straight lines above the buried trenches. This approach provides self-assembled Ge dots with excellent lateral periodicity, which might be useful for fabricating dot-based field-effect-transistors (DotFETs). Here, we propose the concept of a modulation-doped p-channel DotFET (p-MOD-DotFET). The p-MOD-DotFET relies on embedded Ge-rich nanostructures, which provide p-channels through the Ge-rich dots. A high Ge concentration in the dots is desirable in order to exploit the high hole mobility of Ge-rich material. We show that the commonly observed Si-Ge intermixing during Si capping of Ge dots can be suppressed by overgrowing the islands at low temperature.}, language = {en} } @inproceedings{EilerHoeglLindneretal., author = {Eiler, Julian and H{\"o}gl, Christina and Lindner, Matthias and Bachmann, Michael and Schreiner, Rupert}, title = {Miniaturized Surface Dielectric Barrier Discharge Plasma Actuators for Application in Chemical Analysis Systems}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188884}, pages = {40 -- 42}, abstract = {A new concept for a miniaturized planar ion source based on a surface dielectric barrier discharge (SDBD) is presented. A fabrication method based on a stamping process is described, and the plasma actuators are characterized based on their power in dependence of the applied voltage. The voltage for plasma ignition is approx. 1 kV with a maximum plasma power of 40 W/m at 3,4 kV.}, language = {en} } @inproceedings{BartlBuchnerHausladenetal., author = {Bartl, Mathias and Buchner, Philipp and Hausladen, Matthias and Asgharzadehkhorasani, Ali and Bachmann, Michael and Schreiner, Rupert}, title = {Simulations and Investigations of Silicon Nanowire Field Emitters}, series = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, booktitle = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, publisher = {IEEE}, doi = {10.1109/IVNC63480.2024.10652355}, pages = {1 -- 2}, abstract = {The emission behavior of field emission electron sources consisting of a silicon nanowire cathode, an extraction grid electrode and a planar anode was investigated based on a particle tracing simulation using FEM. The focus was on the influence of the grid geometry as well as the positioning of the grid relative to the emitters on the electron transmission. The highest transmission can be achieved with the emitter tips protruding 10 µm trough the extraction grid openings. The transmission decreases more rapidly with increasing distance between the tip and the grid the thicker the grid is.}, language = {en} } @article{HausladenBuchnerBartletal., author = {Hausladen, Matthias and Buchner, Philipp and Bartl, Mathias and Bachmann, Michael and Schreiner, Rupert}, title = {Integrated multichip field emission electron source fabricated by laser-micromachining and MEMS technology}, series = {Journal of Vacuum Science \& Technology B}, volume = {42}, journal = {Journal of Vacuum Science \& Technology B}, number = {1}, publisher = {AIP Publishing}, doi = {10.1116/6.0003233}, abstract = {In this work, high-current field emission electron source chips were fabricated using laser-micromachining and MEMS technology. The resulting chips were combined with commercially available printed circuit boards (PCBs) to obtain a multichip electron source. By controlling the separate electron sources using an external current control circuit, we were able to divide the desired total current evenly across the individual chips deployed in the PCB-carrier. In consequence, we were able to show a decreased degradation due to the reduced current load per chip. First, a single electron source chip was measured without current regulation. A steady-state emission current of 1 mA with a high stability of ±1.3\% at an extraction voltage of 250 V was observed. At this current level, a mean degradation slope of -0.7 μA/min with a nearly perfect transmission ratio of 99\% ± 0.4\% was determined. The measurements of a fully assembled multichip PCB-carrier electron source, using a current control circuit for regulation, showed that an even distribution of the desired total current led to a decreased degradation. This was determined by the increase in the required extraction voltage over time. For this purpose, two current levels were applied to the electron source chips of the PCB-carrier using an external current control circuit. First, 300 μA total current was evenly distributed among the individual electron source chips followed by the emission of 300 μA per electron source chip. This allows the observation of the influence of a distributed and nondistributed total current, carried by the electron source chips. Thereby, we obtained an increase in the mean degradation slope from +0.011 V/min (300 μA distributed) to +0.239 V/min (300 μA per chip), which is approximately 21 times higher. Moreover, our current control circuit improved the current stability to under 0.1\% for both current levels, 300 μA distributed and 300 μA per chip.}, language = {en} } @article{RemškarJelencCzepurnyietal., author = {Remškar, Maja and Jelenc, Janez and Czepurnyi, Nikolai and Malok, Matjaž and Pirker, Luka and Schreiner, Rupert and H{\"u}ttel, Andreas K.}, title = {Modulations of the work function and morphology of a single MoS2 nanotube by charge injection}, series = {Nanoscale Advances}, journal = {Nanoscale Advances}, publisher = {Royal Society of Chemistry (RSC)}, issn = {2516-0230}, doi = {10.1039/d4na00490f}, abstract = {Both the miniaturization of transistor components and the ongoing investigation of material systems with potential for quantum information processing have significantly increased current interest of researchers in semiconducting inorganic nanotubes. Here we report on an additional outstanding aspect of these nanostructures, namely the intrinsic coupling of electronic and mechanical properties. We observe electronic and morphology changes in a single MoS2 nanotube, exposed to charge injections by means of an atomic-force-microscopy tip. An elliptic deformation of the nanotube and helical twisting of the nanotube are visible, consistent with the reverse piezoelectric effect. Work-function changes are found to be dependent on the polarity of the injected carriers. An unexpected long-term persistence of the shape deformations is observed and explained with accumulation of structural defects and the resultant strain, which could cause a memory-like charge confinement and a long lasting modulation of the work function.}, language = {en} } @article{LindnerPipaKarpenetal., author = {Lindner, Matthias and Pipa, Andrei V. and Karpen, Norbert and Hink, R{\"u}diger and Berndt, Dominik and Foest, R{\"u}diger and Bonaccurso, Elmar and Weichwald, Robert and Friedberger, Alois and Caspari, Ralf and Brandenburg, Ronny and Schreiner, Rupert}, title = {Icing Mitigation by MEMS-Fabricated Surface Dielectric Barrier Discharge}, series = {Applied Sciences}, volume = {11}, journal = {Applied Sciences}, number = {23}, publisher = {MDPI}, address = {Basel}, doi = {10.3390/app112311106}, pages = {1 -- 17}, abstract = {Avoiding ice accumulation on aerodynamic components is of enormous importance to flight safety. Novel approaches utilizing surface dielectric barrier discharges (SDBDs) are expected to be more efficient and effective than conventional solutions for preventing ice accretion on aerodynamic components. In this work, the realization of SDBDs based on thin-film substrates by means of micro-electro-mechanical-systems (MEMS) technology is presented. The anti-icing performance of the MEMS SDBDs is presented and compared to SDBDs manufactured by printed circuit board (PCB) technology. It was observed that the 35 mu m thick electrodes of the PCB SDBDs favor surface icing with an initial accumulation of supercooled water droplets at the electrode impact edges. This effect was not observed for 0.3 mu m thick MEMS-fabricated electrodes indicating a clear advantage for MEMS-technology SDBDs for anti-icing applications. Titanium was identified as the most suitable material for MEMS electrodes. In addition, an optimization of the MEMS-SDBDs with respect to the dielectric materials as well as SDBD design is discussed.}, language = {en} } @misc{ScharfenbergMottokArtmannetal., author = {Scharfenberg, Georg and Mottok, J{\"u}rgen and Artmann, Christina and Hobelsberger, Martin and Paric, Ivan and Großmann, Benjamin and Pohlt, Clemens and Wackerbarth, Alena and Pausch, Uli and Heidrich, Christiane and Fadanelli, Martin and Elsner, Michael and P{\"o}cher, Daniel and Pittroff, Lenz and Beer, Stefan and Br{\"u}ckl, Oliver and Haslbeck, Matthias and Sterner, Michael and Thema, Martin and Muggenthaler, Nicole and Lenck, Thorsten and G{\"o}tz, Philipp and Eckert, Fabian and Deubzer, Michael and Stingl, Armin and Simsek, Erol and Kr{\"a}mer, Stefan and Großmann, Benjamin and Schlegl, Thomas and Niedersteiner, Sascha and Berlehner, Thomas and Joblin, Mitchell and Mauerer, Wolfgang and Apel, Sven and Siegmund, Janet and Riehle, Dirk and Weber, Joachim and Palm, Christoph and Zobel, Martin and Al-Falouji, Ghassan and Prestel, Dietmar and Scharfenberg, Georg and Mandl, Roland and Deinzer, Arnulf and Halang, W. and Margraf-Stiksrud, Jutta and Sick, Bernhard and Deinzer, Renate and Scherzinger, Stefanie and Klettke, Meike and St{\"o}rl, Uta and Wiech, Katharina and Kubata, Christoph and Sindersberger, Dirk and Monkman, Gareth J. and Dollinger, Markus and Dembianny, Sven and K{\"o}lbl, Andreas and Welker, Franz and Meier, Matthias and Thumann, Philipp and Swidergal, Krzysztof and Wagner, Marcus and Haug, Sonja and Vernim, Matthias and Seidenst{\"u}cker, Barbara and Weber, Karsten and Arsan, Christian and Schone, Reinhold and M{\"u}nder, Johannes and Schroll-Decker, Irmgard and Dillinger, Andrea Elisabeth and Fuchshofer, Rudolf and Monkman, Gareth J. and Shamonin (Chamonine), Mikhail and Geith, Markus A. and Koch, Fabian and {\"U}hlin, Christian and Schratzenstaller, Thomas and Saßmannshausen, Sean Patrick and Auchter, Eberhard and Kriz, Willy and Springer, Othmar and Thumann, Maria and Kusterle, Wolfgang and Obermeier, Andreas and Udalzow, Anton and Schmailzl, Anton and Hierl, Stefan and Langer, Christoph and Schreiner, Rupert}, title = {Forschungsbericht 2015}, editor = {Baier, Wolfgang}, address = {Regensburg}, organization = {Ostbayerische Technische Hochschule Regensburg}, isbn = {978-3-00-048589-3}, doi = {10.35096/othr/pub-1386}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-13867}, language = {de} } @inproceedings{KrysztofUrbańskiGrzebyketal., author = {Krysztof, Michał and Urbański, Paweł and Grzebyk, Tomasz and Hausladen, Matthias and Schreiner, Rupert}, title = {MEMS X-Ray Source: Electron Emitter Development}, series = {2022 21st International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS): 12-15 Dec. 2022, Salt Lake City, UT, USA}, booktitle = {2022 21st International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS): 12-15 Dec. 2022, Salt Lake City, UT, USA}, publisher = {IEEE}, doi = {10.1109/PowerMEMS56853.2022.10007563}, pages = {248 -- 251}, abstract = {The article presents a fabrication process and characterization of silicon emitters designed for MEMS X-ray source. The emitters, made of p-type and n-type silicon, were prepared by a modified laser micromachining process. Both types of emitters worked without any carbon nanotube coverage, which was the case in the previous realization of electron emitters. The p-type emitter gave smaller electron beam currents (<50 nA) with stable emission in a saturation region. The n-type emitter provides higher emission currents (>1 µA) not limited by saturation region, but with higher fluctuations. The final choice of emitter will be adjusted for different applications.}, language = {en} }