@article{PirkerŁawrowskiSchreineretal., author = {Pirker, Luka and Ławrowski, Robert Damian and Schreiner, Rupert and Remškar, Maja and Višić, Bojana}, title = {MoₓWₓ₋₁S₂ Nanotubes for Advanced Field Emission Application}, series = {Advanced Functional Materials}, journal = {Advanced Functional Materials}, publisher = {Wiley}, issn = {1616-3028}, doi = {10.1002/adfm.202213869}, pages = {1 -- 8}, abstract = {Transition metal dichalcogenide (TMDC) nanotubes complement the field of low-dimensional materials with their quasi-1D morphology and a wide set of intriguing properties. By introducing different transition metals into the crystal structure, their properties can be tailored for specific purpose and applications. Herein, the characterization and a subsequent preparation of single-nanotube field emission devices of MoxWx-1S2 nanotubes prepared via the chemical vapor transport reaction is presented. Energy-dispersive X-ray spectroscopy, Raman spectroscopy, and X-ray diffraction indicate that the molybdenum and tungsten atoms are randomly distributed within the crystal structure and that the material is highly crystalline. High resolution transmission electron microscopy and electron diffraction (ED) patterns further corroborate these findings. A detailed analysis of the ED patterns from an eight-layer nanotube reveal that the nanotubes grow in the 2H structure, with each shell consists of one bilayer. The work function of the nanotubes is comparable to that of pure MoS2 and lower of pure WS2 NTs, making them ideal candidates for field emission applications. Two devices with different geometrical setup are prepared and tested as field emitters, showing promising results for single nanotube field emission applications.}, language = {en} } @inproceedings{ŁawrowskiLangerSchreineretal., author = {Ławrowski, Robert Damian and Langer, Christoph and Schreiner, Rupert and Sellmair, Josef}, title = {Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition}, series = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, booktitle = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, publisher = {IEEE}, doi = {10.1109/IVNC.2018.8520059}, pages = {1-2}, abstract = {Nano emitters were deposited by focused electron beam induced deposition of Trimethyl-(methylcyclopentadienyl)platinum(IV) on top of silicon pillars. The nano emitters were exactly positioned in the center on the top of up to four pillars of a quadratic arranged array of sixteen pillars with a pitch of 50 μm. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The Fowler-Nordheim plots show a linear behavior, like expected for an n-type silicon material and a metal needle. The I-V measurement of the most promising sample shows an integral emission current up to 2 μm at a voltage of 600 V (12 MV/m) and an onset voltage for a current of 1 nA of about 300 V.}, language = {en} }