@article{ReinkingKammlerHoffmannetal., author = {Reinking, D. and Kammler, Martin and Hoffmann, N. and Horn-von Hoegen, Michael and Hofmann, K. R.}, title = {Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates}, series = {Electronics Letters}, volume = {35}, journal = {Electronics Letters}, number = {6}, publisher = {IET}, doi = {10.1049/el:19990349}, pages = {503 -- 504}, abstract = {The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs}, language = {en} }