@inproceedings{SaravananGerlachPeschkeetal., author = {Saravanan, Brem Kumar and Gerlach, Philipp and Peschke, Martin and Knoedl, Thomas and Schreiner, Rupert and Hanke, Christian and Stegmueller, Bernhard}, title = {Integrated DFB laser electro-absorption modulator based on identical MQW-double stack active layer for high-speed modulation beyond 10 GBIT/S}, series = {16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 31 May - 04 June 2004, Kagoshima, Japan}, booktitle = {16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 31 May - 04 June 2004, Kagoshima, Japan}, publisher = {IEEE}, isbn = {0-7803-8595-0}, doi = {10.1109/ICIPRM.2004.1442656}, pages = {236 -- 238}, abstract = {Integrated DFBLD-EAM-SOA devices utilizing an identical MQW active region have been realized in the AlGaInAs/InP material system. A fiber-coupled optical power of >6 mW with a 10 dB static extinction, 44 dB SMSR single-mode spectrum and a 3 dBe cutoff frequency of 25 GHz was measured.}, language = {en} } @inproceedings{KnodlHankeSaravananetal., author = {Knodl, Thomas and Hanke, Christian and Saravanan, Brem Kumar and Peschke, Martin and Schreiner, Rupert and Stegmuller, Bernhard}, title = {Integrated 1.3-μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure}, series = {Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits}, booktitle = {Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits}, editor = {Righini, Giancarlo C. and Honkanen, Seppo}, publisher = {SPIE}, doi = {10.1117/12.544610}, pages = {1}, abstract = {We present first experimental results of the successful transfer of our monolithic integrated double-stack multi quantum well laser-modulator approach from the traditional InGaAsP/InP to the more promising InGaAlAs/InP material system. In continuous wave operation at room temperature, the devices achieved threshold currents of <21 mA, fiber coupled optical power levels up to 570 μW and static extinction ratios in the range of 15 dB/V. The measured small-signal modulation bandwidth of about 10 GHz is capacitance limited due to a conservative device layout.}, language = {en} }