@inproceedings{NavitskiSerbunMuelleretal., author = {Navitski, Aliaksandr and Serbun, Pavel and M{\"u}ller, G{\"u}nter and Schreiner, Rupert and Dams, Florian}, title = {Efficient and reliable field emission from silicon tip arrays for miniaturized electron sources}, series = {2011 24th International Vacuum Nanoelectronics Conference ; 18-22 July 2011 Wuppertal}, booktitle = {2011 24th International Vacuum Nanoelectronics Conference ; 18-22 July 2011 Wuppertal}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-00-035081-8}, issn = {2380-6311}, pages = {71 -- 72}, abstract = {Silicon-based cathodes with precisely aligned field emitter arrays (FEA) applicable for miniaturized electron sources were successfully developed and fabricated. The cathode chips contain about 3×105 Si tips/cm2 in a triangular array with a tip height of 2.5 μm, tip radius of 20 nm, and lateral distance between tips of 20 μm. Amazingly homogeneous and well-aligned field emission (FE) from all tips (i.e. 100\% efficiency) and maximum stable currents of typically 0.1 μA for p- and 0.6 μA for n-type Si were reproducibly achieved. Current-voltage characteristics of p-type Si tips exhibit the expected saturation at around 10 nA due to limited supply of electrons from a depletion layer, while the n-type Si tips show the usual FN behaviour. Additional coating of the Si tips with a 10 nm Au layer resulted in at least 5 times higher average FE current levels i.e. typically 3 μA but lead, however, to a 30\% increase of the onset voltage.}, language = {en} }