@inproceedings{LangerHausladenPrommesbergeretal., author = {Langer, Christoph and Hausladen, Matthias and Prommesberger, Christian and Ławrowski, Robert Damian and Bachmann, Michael and D{\"u}sberg, Felix and Pahlke, Andreas and Shamonin (Chamonine), Mikhail and Schreiner, Rupert}, title = {Field emission current investigation of p-type and metallized silicon emitters in the frequency domain}, series = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, booktitle = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, publisher = {IEEE}, doi = {10.1109/IVNC.2018.8520127}, pages = {1-2}, abstract = {We investigated two different field emitter arrays consisting of 10×10 p-type and 10×10 undoped Au-coated high aspect ratio silicon tips. The I-V characterization of the p-type sample showed a pronounced saturation for voltages higher than 500 V and a maximum emission current of 39 nA. The metallized sample revealed a FN-like emission up to several μA. The metallized and the p-type sample operating below the saturation region showed high current fluctuations of ±16\%. Whereas, the metallized sample with current regulation and the p-type sample in the saturation yielded a current stability of ±0.4\% and ±0.3\%, respectively. Investigations in the frequency domain revealed the for field emission typical 1/f-noise. By operating in the saturation region (p-type sample) or using an emission current regulation (metallized sample) the noise level was reduced by at least 20 dB. Finally, the p-type sample was illuminated by a light emitting diode to increase and modulate the emission current in the saturation region. The emission current was increased by a factor of 3.7 to 145 nA. With this configuration we emulated an unstable emission behavior and evaluated the performance of our emission current regulation circuit.}, language = {en} } @inproceedings{BachmannDamsDuesbergetal., author = {Bachmann, Michael and Dams, Florian and D{\"u}sberg, F. and Hofmann, Martin and Pahlke, Andreas and Langer, Christoph and Ławrowski, Robert Damian and Prommesberger, Christian and Schreiner, Rupert}, title = {Stability investigation of high aspect ratio n-type silicon field emitter arrays}, series = {2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China}, booktitle = {2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China}, publisher = {IEEE}, doi = {10.1109/IVNC.2015.7225584}, pages = {204 -- 205}, abstract = {Electron sources based on silicon field emitter arrays, produced in processes based on semiconductor technology, are good candidates for a miniaturized X-ray source. A key parameter for this application is the stability of the X-ray photon flux and, thus, the emission current. In the present work we have investigated the influence of the residual gas pressure and a resistor in series on the emission stability of a high aspect ratio n-type silicon emitter array with hybrid extraction electrode. An increase of current fluctuations was found for pressures above 10-6 mbar. High resistances in series to the emitter array alter the emission characteristics, but greatly suppress spikes in the emission current and improve its stability. This, however, strongly depends on the bias point. The field enhancement factor is not affected by the resistance. In a long term measurement the emission current was found to be constant after an initial phase of degradation.}, language = {en} }