@article{EdlerBachmannBreueretal., author = {Edler, Simon and Bachmann, Michael and Breuer, Janis and Dams, Florian and D{\"u}sberg, Felix and Hofmann, Martin and Jakšič, Jasna and Pahlke, Andreas and Langer, Christoph and Ławrowski, Robert Damian and Prommesberger, Christian and Schreiner, Rupert}, title = {Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup}, series = {Journal of Applied Physics}, volume = {122}, journal = {Journal of Applied Physics}, doi = {10.1063/1.4987134}, abstract = {In the present work, black-silicon field emitter arrays (FEAs) are investigated regarding the influence of residual gas pressure on the characteristics and lifetime in the high voltage triode setup. Current-voltage-characteristics at different pressure levels are recorded and show a decreasing emission current with rising pressure. This decrease can be explained by an increase of the work function and charging of the emitter surface caused by adsorbates. The emission current can be restored to its initial value by heating of the FEA up to 110 °C during active emission. With this regeneration procedure, an extended lifetime from about 20 h to 440 h at a residual gas pressure of 10-5 mbar is achieved.}, language = {en} } @article{BachmannDamsDuesbergetal., author = {Bachmann, Michael and Dams, Florian and D{\"u}sberg, Felix and Hofmann, Martin and Pahlke, Andreas and Langer, Christoph and Ławrowski, Robert Damian and Prommesberger, Christian and Schreiner, Rupert and Serbun, Pavel and L{\"u}tzenkirchen-Hecht, Dirk and M{\"u}ller, G{\"u}nter}, title = {Extraction of the characteristics of current-limiting elements from field emission measurement data}, series = {Journal of Vacuum Science \& Technology B}, volume = {35}, journal = {Journal of Vacuum Science \& Technology B}, number = {2}, doi = {10.1116/1.4971768}, abstract = {In this contribution, the authors will present an algorithm to extract the characteristics of nonideal field emission circuit elements from saturation-limited field emission measurement data. The method for calculating the voltage drop on current-limiting circuit elements is based on circuit theory as well as Newton's method. Since the only assumption the authors make on the current-limiting circuit is a connection in series, this method is applicable to most field emission data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters as well as the parameter correlations are fully taken into account throughout the algorithm. N-type silicon samples with varying external serial resistors are analyzed. All results show a good agreement to the nominal resistor values. Additionally, several p-type samples are analyzed, showing a diodelike behavior. The extracted current-limiting characteristics of the p-type samples are in good agreement with a pn-junction model. The stability of the emission current of the p-type samples is measured by constant voltage measurements and compared to the extracted current-limiting characteristics. The application of the algorithm to measurement data shows that the given algorithm is a valuable tool to analyze field emission measurement data influenced by nonemissive processes.}, language = {en} } @article{PrommesbergerBachmannDuesbergetal., author = {Prommesberger, Christian and Bachmann, Michael and D{\"u}sberg, Felix and Langer, Christoph and Ławrowski, Robert Damian and Hofmann, Martin and Pahlke, Andreas and Schreiner, Rupert}, title = {Regulation of the Transmitted Electron Flux in a Field-Emission Electron Source Demonstrated on Si Nanowhisker Cathodes}, series = {IEEE Transactions on Electron Devices}, volume = {64}, journal = {IEEE Transactions on Electron Devices}, number = {12}, issn = {5128-5133}, doi = {10.1109/TED.2017.2763239}, abstract = {We report on a method to stabilize the transmitted electron flux in a field-emission electron source using an external regulation circuit. The electron source was realized with an array of silicon (Si) nanowhiskers on the top of elongated pillar structures, a mica spacer, and an extraction grid made of Si. As for most applications, the emitted electron current from the cathode is not as crucial as the transmitted electron flux through the extraction grid toward the anode. We investigated a method which allows the regulation directly by the emitted electron flux and not merely on the cathode current. By using this method, we were able to stabilize the emitted electron flux of our electron source down to values below 1\%. Simultaneously, it was shown that there is the possibility to stabilize the influencing value in the real application as well. The effectiveness of this method was demonstrated successfully with an X-ray source setup. The measured X-ray photon count rate was stabilized to a standard deviation of 0.30\% at a pressure of 1 × 10 -7 mbar. Even in harsh environment of 2 × 10 -5 mbar, a stabilization of the X-ray photon count rate down to a value of 0.63\% was achieved.}, language = {en} } @inproceedings{BachmannDamsDuesbergetal., author = {Bachmann, Michael and Dams, Florian and D{\"u}sberg, Felix and Hofmann, Martin and Pahlke, Andreas and Langer, Christoph and Ławrowski, Robert Damian and Prommesberger, Christian and Schreiner, Rupert}, title = {Extraction of the characteristics of limiting elements from field emission measurement data}, series = {29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada}, booktitle = {29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada}, publisher = {IEEE}, issn = {2380-6311}, doi = {10.1109/IVNC.2016.7551474}, pages = {81 -- 82}, abstract = {In this contribution we will present an algorithm to extract the characteristics of non-Fowler-Nordheim (FN) circuit elements from saturation limited field emission (FE) measurement data. The method for calculating the voltage drop on limiting circuit elements is based on circuit theory as well as Newton's method. Since no assumption on the limiting circuit is made, this method is applicable to any FE data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters are fully taken into account throughout the algorithm. External serial resistors and a limiting p-doped substrate are analyzed, where the latter shows a diode-like behavior.}, language = {en} } @inproceedings{BachmannDamsDuesbergetal., author = {Bachmann, Michael and Dams, Florian and D{\"u}sberg, Felix and Hofmann, Martin and Pahlke, Andreas and Langer, Christoph and Ławrowski, Robert Damian and Prommesberger, Christian and Schreiner, Rupert}, title = {Control of the electron source current}, series = {International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg}, booktitle = {International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg}, publisher = {IEEE}, doi = {10.1109/IVNC.2017.8051550}, pages = {66 -- 67}, abstract = {A control circuit to stabilize the flux of electrons transmitted through an extractor electrode is presented. By controlling the emission current a fluctuation with a standard deviation of 0.015\% is observed. However, the achievable stability of the transmitted electron current is limited due to a variation of the extraction grid current ratio showing a standard deviation of 4.33\%. By regulating the difference of the emission current and the extraction grid current an improved stability of the transmitted electron current down to a standard deviation of 0.280\% is observed. Even with operation at 2 × 10 -5 mbar a standard deviation of 0.558\% is achieved.}, language = {en} } @article{HornvonHoegenMeyerzuHeringdorfKammleretal., author = {Horn-von Hoegen, Michael and Meyer zu Heringdorf, Frank-Joachim and Kammler, Martin and Schaeffer, C. and Reinking, D. and Hofmann, K. R.}, title = {Bi surfactant mediated epitaxy of Ge on Si(111)}, series = {Thin Solid Films}, volume = {343-344}, journal = {Thin Solid Films}, publisher = {Elsevier}, doi = {10.1016/S0040-6090(98)01659-9}, pages = {579 -- 582}, abstract = {We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature.}, language = {en} } @article{ReinkingKammlerHoffmannetal., author = {Reinking, D. and Kammler, Martin and Hoffmann, N. and Horn-von Hoegen, Michael and Hofmann, K. R.}, title = {Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates}, series = {Electronics Letters}, volume = {35}, journal = {Electronics Letters}, number = {6}, publisher = {IET}, doi = {10.1049/el:19990349}, pages = {503 -- 504}, abstract = {The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs}, language = {en} } @article{SwobodaSchmiederBulittaetal., author = {Swoboda, Walter and Schmieder, Martin and Bulitta, Clemens and Gaisser, Sibylle and Hofmann, Georg Rainer and Kremer-R{\"u}cker, Prisca and Krumme, Julia and Kullmann, Walter and Kunhardt, Horst and Lauer, Norina and Meussling-Sentpali, Annette and Mohr, Christa and Pfingsten, Andrea and Riener, Andreas and Terborg, Barbara and Weber, Beatrix and Weber, Karsten and Wolff, Mechthild}, title = {Die gemeinsame Ethik-Kommission der Hochschulen Bayerns - GEHBa}, series = {mdi - Forum der Medizin-Dokumentation und Medizin-Informatik}, volume = {23}, journal = {mdi - Forum der Medizin-Dokumentation und Medizin-Informatik}, number = {3}, publisher = {mdi GbR}, issn = {1438-0900}, pages = {80 -- 83}, abstract = {Die Einholung eines Ethikvotums ist in der Medizin verpflichtend. Auch in anderen Disziplinen ist eine ethische Beurteilung h{\"a}ufig notwendig. Bisher gibt es nur wenig hierf{\"u}r zust{\"a}ndige Stellen. Die gemeinsame Ethik-Kommission der Hochschulen Bayerns (GEHBa) f{\"u}llt diese L{\"u}cke. Antr{\"a}ge k{\"o}nnen gestellt werden unter www.gehba.de.}, language = {de} } @article{LangerPrommesbergerŁawrowskietal., author = {Langer, Christoph and Prommesberger, Christian and Ławrowski, Robert Damian and Schreiner, Rupert and Serbun, Pavel and M{\"u}ller, G{\"u}nter and D{\"u}sberg, Felix and Hofmann, Martin and Bachmann, Michael and Pahlke, Andreas}, title = {Field emission properties of p-type black silicon on pillar structures}, series = {Journal of Vacuum Science \& Technology B}, volume = {34}, journal = {Journal of Vacuum Science \& Technology B}, number = {2}, doi = {10.1116/1.4943919}, abstract = {Arrays of black silicon field emission pillar structures were fabricated on p-type silicon substrates. Two types of samples with the same number of pillars (arrays of 10 × 10) but different pillar heights (8 and 20 μm) were prepared as well as a black silicon reference sample without pillars. The field emission properties of these cathodes were investigated both by means of integral current-voltage measurements and by field emission scanning microscopy. Samples with a pillar height of 20 μm revealed onset fields as low as 6.4 V/μm, field enhancement factors up to 800, and emission currents up to 8 μA at an applied field of 20 V/μm. Due to the p-type material, a saturation of the emission current for fields above 11 V/μm was observed. This saturation leads to a stable operation with a current fluctuation of less than ±8\%. It was found that samples with a pillar height of 20 μm showed improved emission characteristics compared to samples with a pillar height of 8 μm or without pillars. The voltage maps revealed an increased emission homogeneity after a "burn-in" sequence of the sample. The current map showed that a few of the pillars dominate the emission. Integral current stability measurements were performed under different vacuum pressures, in order to investigate altered emission behavior and a potential degradation of the emitters. At pressures above 10-6 mbar, the sample starts to degrade irreversibly. Nevertheless, even after a harsh treatment over 30 min at 5 × 10-5 mbar and at an applied field of 23 V/μm, the cathode was still operating, and did not fail during further operation over 20 h at 5 × 10-8 mbar and at an applied field of 28 V/μm.}, language = {en} } @misc{MauererRexhepajMonkmanetal., author = {Mauerer, Wolfgang and Rexhepaj, Tanja and Monkman, Gareth J. and Sindersberger, Dirk and Diermeier, Andreas and Neidhart, Thomas and Wolfrum, Dominik and Sterner, Michael and Heberl, Michael and Nusko, Robert and Maier, Georg and Nagl, Klaus and Reuter, Monika and Hofrichter, Andreas and Lex, Thomas and Lesch, Florian and Kieninger, B{\"a}rbel and Szalo, Alexander Eduard and Zehner, Alexander and Palm, Christoph and Joblin, Mitchell and Apel, Sven and Ramsauer, Ralf and Lohmann, Daniel and Westner, Markus and Strasser, Artur and Munndi, Maximilian and Ebner, Lena and Elsner, Michael and Weiß, Nils and Segerer, Matthias and Hackenberg, Rudolf and Steger, Sebastian and Schmailzl, Anton and Dostalek, Michael and Armbruster, Dominik and Koch, Fabian and Hierl, Stefan and Thumann, Philipp and Swidergal, Krzysztof and Wagner, Marcus and Briem, Ulrich and Diermeier, Andreas and Spreitzer, Stefan and Beiderbeck, Sabrina and Hook, Christian and Zobel, Martin and Weber, Tim and Groß, Simon and Penzkofer, Rainer and Dendorfer, Sebastian and Schillitz, Ingo and Bauer, Thomas and Rudolph, Clarissa and Schmidt, Katja and Liebetruth, Thomas and Hamer, Markus and Haug, Sonja and Vernim, Matthias and Weber, Karsten and Saßmannshausen, Sean Patrick and Books, Sebastian and Neuleitner, Nikolaus and Rechenauer, Christian and Steffens, Oliver and Kusterle, Wolfgang and G{\"o}mmel, Roland and Wellnitz, Felix and Stierstorfer, Johannes and Stadler, Dominik and Hofmann, Matthias J. and Motschmann, Hubert and Shamonin (Chamonine), Mikhail and Bleicher, Veronika and Fischer, Sebastian and Hackenberg, Rudolf and Horn, Anton and Kawasch, Raphael and Petzenhauser, Michael and Probst, Tobias and Udalzow, Anton and Dams, Florian and Schreiner, Rupert and Langer, Christoph and Prommesberger, Christian and Ławrowski, Robert Damian}, title = {Forschungsbericht 2016}, editor = {Baier, Wolfgang}, address = {Regensburg}, organization = {Ostbayerische Technische Hochschule Regensburg}, doi = {10.35096/othr/pub-1384}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-13840}, language = {de} } @inproceedings{SerbunPorshynMuelleretal., author = {Serbun, Pavel and Porshyn, V. and M{\"u}ller, G{\"u}nter and Mingels, S. and L{\"u}tzenkirchen-Hecht, Dirk and Bachmann, Michael and D{\"u}sberg, Felix and Dams, Florian and Hofmann, Martin and Pahlke, Andreas and Prommesberger, Christian and Langer, Christoph and Ławrowski, Robert Damian and Schreiner, Rupert}, title = {Field emission behavior of Au-tip-coated p-type Si pillar structures}, series = {29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada}, booktitle = {29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada}, publisher = {IEEE}, issn = {2380-6311}, doi = {10.1109/IVNC.2016.7551516}, pages = {181 -- 182}, abstract = {Precisely aligned high-aspect-ratio (HAR) silicon tip arrays were fabricated using enhanced reactive ion etching with an inductively-coupled-plasma followed by a sharpening oxidation. A gold thin film was then sputtered only on the tips of the HAR structures. Field-emission (FE) properties from Au-coated HAR p-Si tip array cathodes have been systematically investigated by means of field emission scanning microscopy (FESM). A rather high efficiency of the HAR Si structures (71\% at 550 V), but limited homogeneous FE with currents of 1-600 nA might be correlated with the varying geometry of the tips and the presence of oxides. I-V measurements of single Au-coated HAR emitters revealed activation effects and the saturation current region at 3 nA. An increase of the saturation current by 4 orders of magnitude was observed during 20 hours of conditioning at constant voltage, which finally resulted in nearly reproducible FN curves with a ß-factor of 473. An excellent stability of the emission current of less than 1 \% was obtained during the additional long-time conditioning at constant voltage. Optical switching under halogen lamp illumination resulted in at least 2 times higher saturation currents and showed a linear dependence of the FE current on the light color temperature.}, language = {en} }