@inproceedings{SerbunPorshynMuelleretal., author = {Serbun, Pavel and Porshyn, Vitali and M{\"u}ller, G{\"u}nter and Mingels, Stephan and L{\"u}tzenkirchen-Hecht, Dirk and Bachmann, Michael and D{\"u}sberg, Felix and Dams, Florian and Hofmann, Martin and Pahlke, Andreas and Prommesberger, Christian and Langer, Christoph and Ławrowski, Robert Damian and Schreiner, Rupert}, title = {Field emission behavior of Au-tip-coated p-type Si pillar structures}, series = {29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada}, booktitle = {29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada}, publisher = {IEEE}, issn = {2380-6311}, doi = {10.1109/IVNC.2016.7551516}, pages = {181 -- 182}, abstract = {Precisely aligned high-aspect-ratio (HAR) silicon tip arrays were fabricated using enhanced reactive ion etching with an inductively-coupled-plasma followed by a sharpening oxidation. A gold thin film was then sputtered only on the tips of the HAR structures. Field-emission (FE) properties from Au-coated HAR p-Si tip array cathodes have been systematically investigated by means of field emission scanning microscopy (FESM). A rather high efficiency of the HAR Si structures (71\% at 550 V), but limited homogeneous FE with currents of 1-600 nA might be correlated with the varying geometry of the tips and the presence of oxides. I-V measurements of single Au-coated HAR emitters revealed activation effects and the saturation current region at 3 nA. An increase of the saturation current by 4 orders of magnitude was observed during 20 hours of conditioning at constant voltage, which finally resulted in nearly reproducible FN curves with a ß-factor of 473. An excellent stability of the emission current of less than 1 \% was obtained during the additional long-time conditioning at constant voltage. Optical switching under halogen lamp illumination resulted in at least 2 times higher saturation currents and showed a linear dependence of the FE current on the light color temperature.}, language = {en} } @inproceedings{SchreinerLangerPrommesbergeretal., author = {Schreiner, Rupert and Langer, Christoph and Prommesberger, Christian and Ławrowski, Robert Damian and Dams, Florian and Bachmann, Michael and D{\"u}sberg, F. and Hofmann, Martin and Pahlke, Andreas and Serbun, Pavel and Mingels, Stephan and M{\"u}ller, G{\"u}nter}, title = {Semiconductor field emission electron sources using a modular system concept for application in sensors and x-ray-sources}, series = {2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China}, booktitle = {2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China}, publisher = {IEEE}, doi = {10.1109/IVNC.2015.7225572}, pages = {178 -- 179}, abstract = {Semiconductor field emitters are suitable candidates for applications, which require a very stable field emission (FE) current and a high emission uniformity over the entire emission area. By using different materials and geometries, we are able to vary the FE characteristics within a wide range. Each specific application requires its own optimized design for the cathode as well as for the other parts of the FE electron source. To meet as many of these requirements as possible while using only a limited number of different prefabricated components, we established a modular system concept for our FE electron source. This allows the implementation of almost every cathode material. For first characterizations, we used gated p-type Si cathodes with 16 tips. We obtained stable FE currents of 0.4 μA for a grid-potential of 400 V and a gate potential of 100 V. Almost 100\% of the electrons are emitted towards the grid-electrode. Parasitic leakage paths, as well as the electron emission towards the gate-electrode can be neglected. Approximately 10\% of the electrons are transmitted through the grid and reach the external anode. This is in good agreement with the optical transmission through the grid-mesh.}, language = {en} } @unpublished{PangerlMoserMuelleretal., author = {Pangerl, Jonas and Moser, Elisabeth and M{\"u}ller, Max and Weigl, Stefan and Jobst, Simon and R{\"u}ck, Thomas and Bierl, Rudolf and Matysik, Frank-Michael}, title = {A Highly Sensitive Acetone and Ethanol Quantum Cascade Laser Based Photoacoustic Sensor: Characterization and Multi-Component Spectra Recording in Synthetic Breath}, series = {SSRN Electronic Journal}, journal = {SSRN Electronic Journal}, publisher = {Elsevier}, doi = {10.2139/ssrn.4305376}, abstract = {Trace gas analysis in breath is challenging due to the vast number of different components. We present a highly sensitive quantum cascade laser based photoacoustic setup for breath analysis. Scanning the range between 8260 and 8270 nm with a spectral resolution of 48 pm, we are able to quantify acetone and ethanol within a typical breath matrix containing water and CO2. We photoacoustically acquired spectra within this region of mid-infra-red light and prove that those spectra do not suffer from non-spectral interferences. The purely additive behavior of a breath sample spectrum was verified by comparing it with the independently acquired single component spectra using Pearson and Spearman correlation coefficients. A previously presented simulation approach is improved and an error attribution study is presented. With a 3σ detection limit of 6.5 ppbV in terms of ethanol and 250 pptV regarding acetone, our system is among the best performing presented so far.}, language = {en} } @article{KleinNabbefeldHattabetal., author = {Klein, C. and Nabbefeld, T. and Hattab, H. and Meyer, D. and Jnawali, G. and Kammler, Martin and Meyer zu Heringdorf, Frank-Joachim and Golla-Franz, A. and M{\"u}ller, B. H. and Schmidt, Thomas and Henzler, M. and Horn-von Hoegen, Michael}, title = {Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction}, series = {Review of scientific instruments}, volume = {82}, journal = {Review of scientific instruments}, number = {3}, publisher = {American Institute of Physics}, doi = {10.1063/1.3554305}, abstract = {The precise knowledge of the diffraction condition, i.e., the angle of incidence and electron energy, is crucial for the study of surface morphology through spot profile analysis low-energy electron diffraction (LEED). We demonstrate four different procedures to determine the diffraction condition: employing the distortion of the LEED pattern under large angles of incidence, the layer-by-layer growth oscillations during homoepitaxial growth, a G(S) analysis of a rough surface, and the intersection of facet rods with 3D Bragg conditions.}, language = {en} }