@inproceedings{SerbunPorshynLuetzenkirchenHechtetal., author = {Serbun, Pavel and Porshyn, Vitali and L{\"u}tzenkirchen-Hecht, Dirk and Prommesberger, Christian and Langer, Christoph and Ławrowski, Robert Damian and Schreiner, Rupert}, title = {Photosensitivity of single silicon high-aspect-ratio tips with different doping levels}, series = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, booktitle = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, publisher = {IEEE}, doi = {10.1109/IVNC.2018.8520288}, pages = {1-2}, abstract = {Photosensitivity of single lightly p-doped, highly p-doped, with an integrated p/n junction and intrinsic high-aspect-ratio (HAR) silicon tips was investigated in an ultra-high vacuum environment. The current-voltage characteristics (I-V) of the lightly doped p-type HAR tips showed a characteristic current saturation at around 10-12 nA, whereas the HAR Si tips with p/n junction showed similar saturation phenomena, however, at much smaller current values starting at ~20-30 pA. Optical switching under a halogen lamp illumination resulted in at least 2-4 times higher saturation currents and showed a linear dependence between the illumination power and the FE current, for both types of structures. In case of the highly p-doped HAR tips optical current switching effects, i. e. current saturation, were observed at rather low current levels 1-2 pA. Intrinsic HAR Si-tips showed relative unstable field emission behavior without a clear evidence of the photosensitivity.}, language = {en} } @inproceedings{SchreinerLangerPrommesbergeretal., author = {Schreiner, Rupert and Langer, Christoph and Prommesberger, Christian and Ławrowski, Robert Damian and Dams, Florian and Bachmann, Michael and D{\"u}sberg, F. and Hofmann, Martin and Pahlke, Andreas and Serbun, Pavel and Mingels, Stephan and M{\"u}ller, G{\"u}nter}, title = {Semiconductor field emission electron sources using a modular system concept for application in sensors and x-ray-sources}, series = {2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China}, booktitle = {2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China}, publisher = {IEEE}, doi = {10.1109/IVNC.2015.7225572}, pages = {178 -- 179}, abstract = {Semiconductor field emitters are suitable candidates for applications, which require a very stable field emission (FE) current and a high emission uniformity over the entire emission area. By using different materials and geometries, we are able to vary the FE characteristics within a wide range. Each specific application requires its own optimized design for the cathode as well as for the other parts of the FE electron source. To meet as many of these requirements as possible while using only a limited number of different prefabricated components, we established a modular system concept for our FE electron source. This allows the implementation of almost every cathode material. For first characterizations, we used gated p-type Si cathodes with 16 tips. We obtained stable FE currents of 0.4 μA for a grid-potential of 400 V and a gate potential of 100 V. Almost 100\% of the electrons are emitted towards the grid-electrode. Parasitic leakage paths, as well as the electron emission towards the gate-electrode can be neglected. Approximately 10\% of the electrons are transmitted through the grid and reach the external anode. This is in good agreement with the optical transmission through the grid-mesh.}, language = {en} } @inproceedings{ŁawrowskiLangerPrommesbergeretal., author = {Ławrowski, Robert Damian and Langer, Christoph and Prommesberger, Christian and Schreiner, Rupert and Mingels, Stephan and Porshyn, Vitali and Serbun, Pavel and M{\"u}ller, G{\"u}nter}, title = {Field emission from surface textured GaN with buried double-heterostructures}, series = {2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China}, booktitle = {2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China}, publisher = {IEEE}, doi = {10.1109/IVNC.2015.7225548}, pages = {106 -- 107}, abstract = {In this contribution we report on field emission (FE) cathodes based on thin-film LED-technology and surface texturing. The FE cathode can be used both as an n-GaN cathode with an electrical contact at the top side metallization as well as a pn-GaN diode contacting only the p-GaN layer at the bottom side of the structure. The local and integral FE properties of the textured surface of the LED structure were investigated. For n-GaN an integral emission current up to 1.0 μA at an electric field of 19 V/μm was achieved. The pn-GaN diode measurements showed an integral current saturation behavior with two orders of magnitude lower FE currents. Regulated voltage scans obtained by FE scanning microscopy revealed a well-distributed emission over the whole cathode area. Measurements under pulsed tunable laser illumination and moderate electric fields indicated charge carrier generation in the buried double-heterostructures at photon energies below 3.5 eV besides normal photoemission above 4.1 eV.}, language = {en} } @article{PirkerŁawrowskiSchreineretal., author = {Pirker, Luka and Ławrowski, Robert Damian and Schreiner, Rupert and Remškar, Maja and Višić, Bojana}, title = {MoₓWₓ₋₁S₂ Nanotubes for Advanced Field Emission Application}, series = {Advanced Functional Materials}, journal = {Advanced Functional Materials}, publisher = {Wiley}, issn = {1616-3028}, doi = {10.1002/adfm.202213869}, pages = {1 -- 8}, abstract = {Transition metal dichalcogenide (TMDC) nanotubes complement the field of low-dimensional materials with their quasi-1D morphology and a wide set of intriguing properties. By introducing different transition metals into the crystal structure, their properties can be tailored for specific purpose and applications. Herein, the characterization and a subsequent preparation of single-nanotube field emission devices of MoxWx-1S2 nanotubes prepared via the chemical vapor transport reaction is presented. Energy-dispersive X-ray spectroscopy, Raman spectroscopy, and X-ray diffraction indicate that the molybdenum and tungsten atoms are randomly distributed within the crystal structure and that the material is highly crystalline. High resolution transmission electron microscopy and electron diffraction (ED) patterns further corroborate these findings. A detailed analysis of the ED patterns from an eight-layer nanotube reveal that the nanotubes grow in the 2H structure, with each shell consists of one bilayer. The work function of the nanotubes is comparable to that of pure MoS2 and lower of pure WS2 NTs, making them ideal candidates for field emission applications. Two devices with different geometrical setup are prepared and tested as field emitters, showing promising results for single nanotube field emission applications.}, language = {en} } @misc{BroserFalterŁawrowskietal., author = {Broser, Christian and Falter, Thomas and Ławrowski, Robert Damian and Altenbuchner, Amelie and V{\"o}gele, Daniel and Koss, Claus and Schlamp, Matthias and Dunnweber, Jan and Steffens, Oliver and Heckner, Markus and Jaritz, Sabine and Schiegl, Thomas and Corsten, Sabine and Lauer, Norina and Guertler, Katherine and Koenig, Eric and Haug, Sonja and Huber, Dominik and Birkenmaier, Clemens and Krenkel, Lars and Wagner, Thomas and Justus, Xenia and Saßmannshausen, Sean Patrick and Kleine, Nadine and Weber, Karsten and Braun, Carina N. and Giacoppo, Giuliano and Heinrich, Michael and Just, Tobias and Schreck, Thomas and Schnabl, Andreas and Gilmore, Amador T{\´e}ran and Roeslin, Samuel and Schmid, Sandra and Wellnitz, Felix and Malz, Sebastian and Maurial, Andreas and Hauser, Florian and Mottok, J{\"u}rgen and Klettke, Meike and Scherzinger, Stefanie and St{\"o}rl, Uta and Heckner, Markus and Bazo, Alexander and Wolff, Christian and Kopper, Andreas and Westner, Markus and Pongratz, Christian and Ehrlich, Ingo and Briem, Ulrich and Hederer, Sebastian and Wagner, Marcus and Schillinger, Moritz and G{\"o}rlach, Julien and Hierl, Stefan and Siegl, Marco and Langer, Christoph and Hausladen, Matthias and Schreiner, Rupert and Haslbeck, Matthias and Kreuzer, Reinhard and Br{\"u}ckl, Oliver and Dawoud, Belal and Rabl, Hans-Peter and Gamisch, Bernd and Schmidt, Ottfried and Heberl, Michael and G{\"a}nsbauer, Bianca and Bick, Werner and Ellermeier, Andreas and Monkman, Gareth J. and Prem, Nina and Sindersberger, Dirk and Tschurtschenthaler, Karl and Aurbach, Maximilian and Dendorfer, Sebastian and Betz, Michael A. and Szecsey, Tamara and Mauerer, Wolfgang and Murr, Florian}, title = {Forschung 2018}, editor = {Baier, Wolfgang}, address = {Regensburg}, organization = {Ostbayerische Technische Hochschule Regensburg}, isbn = {978-3-9818209-5-9}, doi = {10.35096/othr/pub-1382}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-13826}, pages = {98}, subject = {Forschung}, language = {de} } @inproceedings{ŁawrowskiLangerSchreineretal., author = {Ławrowski, Robert Damian and Langer, Christoph and Schreiner, Rupert and Sellmair, Josef}, title = {Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition}, series = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, booktitle = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, publisher = {IEEE}, doi = {10.1109/IVNC.2018.8520059}, pages = {1-2}, abstract = {Nano emitters were deposited by focused electron beam induced deposition of Trimethyl-(methylcyclopentadienyl)platinum(IV) on top of silicon pillars. The nano emitters were exactly positioned in the center on the top of up to four pillars of a quadratic arranged array of sixteen pillars with a pitch of 50 μm. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The Fowler-Nordheim plots show a linear behavior, like expected for an n-type silicon material and a metal needle. The I-V measurement of the most promising sample shows an integral emission current up to 2 μm at a voltage of 600 V (12 MV/m) and an onset voltage for a current of 1 nA of about 300 V.}, language = {en} }