@inproceedings{HausladenBomkeBuchneretal., author = {Hausladen, Matthias and Bomke, Vitali and Buchner, Philipp and Bachmann, Michael and Knapek, Alexandr and Schreiner, Rupert}, title = {Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour}, series = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, booktitle = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, publisher = {IEEE}, address = {Piscataway, N.J.}, isbn = {978-1-6654-2589-6}, issn = {2380-6311}, doi = {10.1109/IVNC52431.2021.9600717}, abstract = {ensely packed emitters on a field emission array lead typically to mutual shielding. Taking biology as a role model for geometric arrangements could be a way to reduce this effect. For comparison, two electron sources, one with a spiral and a second with conventional rectangular (orthogonal) arranged emitters, were fabricated and investigated. Emission currents of 6 µA in the spiral ordered array and 120 µA in the rectangular array were reached with an extraction voltage of 400 V. From a mid-term measurement over 1 h a current stability of ±8.8 \% (spiral) respectively ±5.7 \% (rectangular) with a mean degradation of -3.0 µA/h (spiral) and -0.12 µA/h (rectangular) could be observed.}, language = {en} } @inproceedings{AllahamBuchnerSchreineretal., author = {Allaham, Mohammad M. and Buchner, Philipp and Schreiner, Rupert and Kn{\´a}pek, Alexandr}, title = {Testing the performance of Murphy-Good plots when applied to current-voltage characteristics of Si field electron emission tips}, series = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France}, booktitle = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France}, publisher = {IEEE}, doi = {10.1109/IVNC52431.2021.9600690}, pages = {1 -- 2}, abstract = {Murphy-Good plots are the most recent type of the analysis methods in the field electron emission theory, this type of plots has several useful characteristics such as: having the very-nearly straight line to represent the current-voltage characteristics and the absence of the correction factors in the mathematical procedure of the analysis process. In this study, n-type <111> and <100> Si chips containing four individual emitters are used as base emitters and mounted in a diode configuration field emission setup where the experiments are operated in an ultra-high vacuum ( 10-7 Pa). Each chip has four individual controllable emitters with 5 µm distance between the Si tips and the same material grid. Laser micromachining and subsequent wet chemical etching technique is used to structure and polish the tips. Murphy-Good plots are used to study the behavior of the Si individual tips and compare the results with the array current by extracting the field emission characterization parameters of the emitters.}, language = {en} }