@article{PayerKleinAcetetal., author = {Payer, Thomas and Klein, C. and Acet, M. and Ney, V. and Kammler, Martin and Meyer zu Heringdorf, Frank-Joachim and Horn-von Hoegen, Michael}, title = {High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {23}, publisher = {Elsevier}, doi = {10.1016/j.tsf.2012.06.004}, pages = {6905 -- 6908}, abstract = {Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2\%.}, language = {en} } @article{KleinNabbefeldHattabetal., author = {Klein, C. and Nabbefeld, T. and Hattab, H. and Meyer, D. and Jnawali, G. and Kammler, Martin and Meyer zu Heringdorf, Frank-Joachim and Golla-Franz, A. and M{\"u}ller, B. H. and Schmidt, Thomas and Henzler, M. and Horn-von Hoegen, Michael}, title = {Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction}, series = {Review of scientific instruments}, volume = {82}, journal = {Review of scientific instruments}, number = {3}, publisher = {American Institute of Physics}, doi = {10.1063/1.3554305}, abstract = {The precise knowledge of the diffraction condition, i.e., the angle of incidence and electron energy, is crucial for the study of surface morphology through spot profile analysis low-energy electron diffraction (LEED). We demonstrate four different procedures to determine the diffraction condition: employing the distortion of the LEED pattern under large angles of incidence, the layer-by-layer growth oscillations during homoepitaxial growth, a G(S) analysis of a rough surface, and the intersection of facet rods with 3D Bragg conditions.}, language = {en} }