@article{HornvonHoegenMeyerzuHeringdorfKammleretal., author = {Horn-von Hoegen, Michael and Meyer zu Heringdorf, Frank-Joachim and Kammler, Martin and Schaeffer, C. and Reinking, D. and Hofmann, K. R.}, title = {Bi surfactant mediated epitaxy of Ge on Si(111)}, series = {Thin Solid Films}, volume = {343-344}, journal = {Thin Solid Films}, publisher = {Elsevier}, doi = {10.1016/S0040-6090(98)01659-9}, pages = {579 -- 582}, abstract = {We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature.}, language = {en} }