@inproceedings{BuchnerKaiserHausladenetal., author = {Buchner, Philipp and Kaiser, Alexander and Hausladen, Matthias and Bartl, Mathias and Bachmann, Michael and Schreiner, Rupert}, title = {Silicon Nanowire Field Emitters with Integrated Extraction Gates Using Benzocyclobutene as an Insulator}, series = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, booktitle = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, publisher = {IEEE}, doi = {10.1109/IVNC63480.2024.10652314}, pages = {1 -- 2}, abstract = {We are continuously improving the performance of our field emission electron sources. In this work a geometrically optimized design of electron sources with silicon nanowire field emitters on pillars was fabricated. This new design increased the packing density of the emitters by using a hexagonal arrangement of the pillars and a pillar spacing of 40 µm. Benzocyclobutene was used as the insulator material for an integrated (Cr/Ni) extraction gate. A modified fabrication process for the field emitters further improved reproducibility and reliability. An emission current of about 0.4 mA was measured for 30 minutes at an extraction voltage of 250 V and an anode voltage of 500 V. Electron transmission through the gate reached almost 100\%.}, language = {en} } @inproceedings{HausladenBomkeBuchneretal., author = {Hausladen, Matthias and Bomke, Vitali and Buchner, Philipp and Bachmann, Michael and Knapek, Alexandr and Schreiner, Rupert}, title = {Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour}, series = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, booktitle = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, publisher = {IEEE}, address = {Piscataway, N.J.}, isbn = {978-1-6654-2589-6}, issn = {2380-6311}, doi = {10.1109/IVNC52431.2021.9600717}, abstract = {ensely packed emitters on a field emission array lead typically to mutual shielding. Taking biology as a role model for geometric arrangements could be a way to reduce this effect. For comparison, two electron sources, one with a spiral and a second with conventional rectangular (orthogonal) arranged emitters, were fabricated and investigated. Emission currents of 6 µA in the spiral ordered array and 120 µA in the rectangular array were reached with an extraction voltage of 400 V. From a mid-term measurement over 1 h a current stability of ±8.8 \% (spiral) respectively ±5.7 \% (rectangular) with a mean degradation of -3.0 µA/h (spiral) and -0.12 µA/h (rectangular) could be observed.}, language = {en} } @inproceedings{BuchnerBomkeHausladenetal., author = {Buchner, Philipp and Bomke, Vitali and Hausladen, Matthias and Edler, Simon and Bachmann, Michael and Schreiner, Rupert}, title = {Investigation on the Emission Behaviour of p-doped Silicon Field Emission Arrays with Individually Controllable Single Tips}, series = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, booktitle = {2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France}, publisher = {IEEE}, isbn = {978-1-6654-2589-6}, doi = {10.1109/IVNC52431.2021.9600756}, pages = {1 -- 2}, abstract = {Four individually controllable emission tips consisting of <111> p-Type silicon, were structured on a glass substrate by laser ablation. A matching extraction grid was manufactured in the same manner and aligned with the emitters. The resulting samples were characterized in ultra-high vacuum. As expected, the individual currents show a strong saturation and in the saturation region a considerably lower current fluctuation than n-type silicon due to charge carrier depletion. The individual tips behave completely independent behaviour from each other and the overall emission can be deduced from the sum of the currents through the individual tips.}, language = {en} } @inproceedings{HechtBauereiβSellmairetal., author = {Hecht, Fabian and Bauereiβ, Florian and Sellmair, Josef and Buchner, Philipp and Hausladen, Matthias and Schreiner, Rupert}, title = {Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188960}, pages = {160 -- 162}, abstract = {In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).}, language = {en} } @inproceedings{PodstranskyHausladenZlamaletal., author = {Podstr{\´a}nsk{\´y}, J{\´a}chym and Hausladen, Matthias and Zl{\´a}mal, Jakub and Kn{\´a}pek, Alexandr and Schreiner, Rupert}, title = {Single Column Multiple Electron Beam Imaging from N-Type Silicon}, series = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, booktitle = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, publisher = {IEEE}, isbn = {979-8-3503-7976-1}, doi = {10.1109/IVNC63480.2024.10652470}, pages = {1 -- 2}, abstract = {This work is aimed at measuring the electron emission from multiple cathodes formed by n-doped silicon and imaging the electron beams focused by an einzel lens on a CMOS camera. The experimental results are compared with computer simulation to understand the electron emission from the semiconductor cathode and the observed imaging imperfections. Finally, modifications to the experimental setup are suggested that should lead to improvement in the extraction current and spot size of focused electron beams and also better understanding of the processes taking place in the experiment.}, language = {en} } @inproceedings{BartlBuchnerHausladenetal., author = {Bartl, Mathias and Buchner, Philipp and Hausladen, Matthias and Asgharzadehkhorasani, Ali and Bachmann, Michael and Schreiner, Rupert}, title = {Simulations and Investigations of Silicon Nanowire Field Emitters}, series = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, booktitle = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, publisher = {IEEE}, doi = {10.1109/IVNC63480.2024.10652355}, pages = {1 -- 2}, abstract = {The emission behavior of field emission electron sources consisting of a silicon nanowire cathode, an extraction grid electrode and a planar anode was investigated based on a particle tracing simulation using FEM. The focus was on the influence of the grid geometry as well as the positioning of the grid relative to the emitters on the electron transmission. The highest transmission can be achieved with the emitter tips protruding 10 µm trough the extraction grid openings. The transmission decreases more rapidly with increasing distance between the tip and the grid the thicker the grid is.}, language = {en} } @inproceedings{KrysztofUrbańskiGrzebyketal., author = {Krysztof, Michał and Urbański, Paweł and Grzebyk, Tomasz and Hausladen, Matthias and Schreiner, Rupert}, title = {MEMS X-Ray Source: Electron Emitter Development}, series = {2022 21st International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS): 12-15 Dec. 2022, Salt Lake City, UT, USA}, booktitle = {2022 21st International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS): 12-15 Dec. 2022, Salt Lake City, UT, USA}, publisher = {IEEE}, doi = {10.1109/PowerMEMS56853.2022.10007563}, pages = {248 -- 251}, abstract = {The article presents a fabrication process and characterization of silicon emitters designed for MEMS X-ray source. The emitters, made of p-type and n-type silicon, were prepared by a modified laser micromachining process. Both types of emitters worked without any carbon nanotube coverage, which was the case in the previous realization of electron emitters. The p-type emitter gave smaller electron beam currents (<50 nA) with stable emission in a saturation region. The n-type emitter provides higher emission currents (>1 µA) not limited by saturation region, but with higher fluctuations. The final choice of emitter will be adjusted for different applications.}, language = {en} } @inproceedings{LangerHausladenPrommesbergeretal., author = {Langer, Christoph and Hausladen, Matthias and Prommesberger, Christian and Ławrowski, Robert Damian and Bachmann, Michael and D{\"u}sberg, Felix and Pahlke, Andreas and Shamonin (Chamonine), Mikhail and Schreiner, Rupert}, title = {Field emission current investigation of p-type and metallized silicon emitters in the frequency domain}, series = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, booktitle = {International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan}, publisher = {IEEE}, doi = {10.1109/IVNC.2018.8520127}, pages = {1-2}, abstract = {We investigated two different field emitter arrays consisting of 10×10 p-type and 10×10 undoped Au-coated high aspect ratio silicon tips. The I-V characterization of the p-type sample showed a pronounced saturation for voltages higher than 500 V and a maximum emission current of 39 nA. The metallized sample revealed a FN-like emission up to several μA. The metallized and the p-type sample operating below the saturation region showed high current fluctuations of ±16\%. Whereas, the metallized sample with current regulation and the p-type sample in the saturation yielded a current stability of ±0.4\% and ±0.3\%, respectively. Investigations in the frequency domain revealed the for field emission typical 1/f-noise. By operating in the saturation region (p-type sample) or using an emission current regulation (metallized sample) the noise level was reduced by at least 20 dB. Finally, the p-type sample was illuminated by a light emitting diode to increase and modulate the emission current in the saturation region. The emission current was increased by a factor of 3.7 to 145 nA. With this configuration we emulated an unstable emission behavior and evaluated the performance of our emission current regulation circuit.}, language = {en} } @inproceedings{ŁawrowskiHausladenSchreiner, author = {Ławrowski, Robert Damian and Hausladen, Matthias and Schreiner, Rupert}, title = {Individually Addressable Fully Integrated Field Emission Electron Source Fabricated by Laser Micromachining of Silicon}, series = {33rd International Vacuum Nanoelectronics Conference (IVNC): 6-10 July 2020, Lyon}, booktitle = {33rd International Vacuum Nanoelectronics Conference (IVNC): 6-10 July 2020, Lyon}, publisher = {IEEE}, isbn = {978-1-7281-9454-7}, doi = {10.1109/IVNC49440.2020.9203470}, pages = {1 -- 2}, abstract = {A cathode with individually addressable Si tips allows the observation of the activation procedure and emission behaviour of each field emission emitter at any time of the measurement. The cathode consists of an array of 2x2 conically shaped emitter structures, which were fabricated by laser micromachining and wet etching of a Si substrate bonded on a glass carrier. Using the same process, a Si extractions grid was fabricated and mounted onto the emitter. Integral field emission measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10- 9 mbar. The emitters show an onset voltage between 200 V and 300 V. The emission current for each emitter on the cathode was regulated to a given value (1.0 μA, 2.5μA, 5.0μA) by an external regulating circuit and was recorded individually during the measurement. With such approach, the relation between the emission behaviour and the geometry of emitters can be studied in detail. In addition, the current stabilization of each emitters of an array can be investigated, which led to a current stability of better than 0.5\%.}, language = {en} } @inproceedings{SchelsHerdlHausladenetal., author = {Schels, Andreas and Herdl, Florian and Hausladen, Matthias and Wohlfartsst{\"a}tter, Dominik and Bachmann, Michael and Edler, Simon and D{\"u}sberg, Felix and Pahlke, Andreas and Buchner, Philipp and Schreiner, Rupert and Hansch, Walter}, title = {Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188957}, pages = {224 -- 226}, abstract = {Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500.}, language = {en} } @inproceedings{HausladenBuchnerSchelsetal., author = {Hausladen, Matthias and Buchner, Philipp and Schels, Andreas and Edler, Simon and Bachmann, Michael and Schreiner, Rupert}, title = {An Integrated Field Emission Electron Source on a Chip Fabricated by Laser-Micromachining and Mems Technology}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10189001}, pages = {115 -- 116}, abstract = {A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm 2 , With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 \%) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 \% at an extraction voltage of 250 V was observed during a 30-min operation.}, language = {en} } @inproceedings{BuchnerHausladenSchelsetal., author = {Buchner, Philipp and Hausladen, Matthias and Schels, Andreas and Herdl, Florian and Edler, Simon and Bachmann, Michael and Schreiner, Rupert}, title = {An Integrated Silicon Nanowire Field Emission Electron Source on a Chip with High Electron Transmission}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188878}, pages = {6 -- 8}, abstract = {Silicon nanowire field emission arrays (50 × 50 pillars) were fabricated on a silicon glass hybrid wafer. The glass acts both as the support for the whole structure and insulator between cathode and extraction grid. The extraction grid matches the emitter structures and is optically aligned and adhered to the emitter chip by a vacuum compatible epoxide adhesive. These chips exhibit an emission current of about 600 μA at an extraction voltage of 300 V. The electron transmission through the grid is above 80 \%. 58-hour longtime measurements were conducted showing low degradation of the emission current and high stability of electron transmission.}, language = {en} } @inproceedings{HausladenSchelsBuchneretal., author = {Hausladen, Matthias and Schels, Andreas and Buchner, Philipp and Bartl, Mathias and Asgharzade, Ali and Edler, Simon and Wohlfartsst{\"a}tter, Dominik and Bachmann, Michael and Schreiner, Rupert}, title = {Improved Method for Determining the Distribution of FEA Currents by Optical CMOS Sensors}, series = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, booktitle = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, publisher = {IEEE}, doi = {10.1109/IVNC63480.2024.10652543}, pages = {1 -- 2}, abstract = {CMOS image sensors are utilized to determine the time- and spatially-resolved distribution of the electron emission of silicon field emission arrays. During initial experiments, rather low field emission currents already visibly damaged the sensor surface, altering the system accuracy over the measurement time. Therefore, we coated the sensor surface with copper for protection. In contrast to the original insulating surface, the Cu coating provides a conductive surface for incident electrons and improves heat dissipation in addition. This prevents localized surface charges and surface damages which stabilize the system accuracy.}, language = {en} } @inproceedings{BuchnerHausladenBartletal., author = {Buchner, Philipp and Hausladen, Matthias and Bartl, Mathias and Schreiner, Rupert}, title = {Elektronenquellen basierend auf Feldemission aus Silizium}, series = {Tagungsband zum 4. Symposium Elektronik und Systemintegration ESI: 17. April 2024, Hochschule Landshut}, booktitle = {Tagungsband zum 4. Symposium Elektronik und Systemintegration ESI: 17. April 2024, Hochschule Landshut}, publisher = {Hochschule f{\"u}r Angewandte Wissenschaften Landshut}, address = {Landshut}, isbn = {978-3-9818439-9-6}, doi = {10.57688/421}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:860-opus4-4212}, pages = {46 -- 53}, abstract = {Der Beitrag gibt einen {\"U}berblick {\"u}ber zwei typische Bauformen f{\"u}r Elektronenquellen auf der Basis von Feldemission aus Silizium. Des Weiteren wird eine typische Trioden-Beschaltung solcher Elektronenquellen f{\"u}r hohe Elektronentransmission vorgestellt und dabei auf ihre Leistungsf{\"a}higkeit eingegangen.}, language = {de} } @inproceedings{BartlHausladenAsgharzadeetal., author = {Bartl, Mathias and Hausladen, Matthias and Asgharzade, Ali and Buchner, Philipp and Krysztof, Michal and Kn{\´a}pek, Alexandr and Bachmann, Michael and Schreiner, Rupert}, title = {Experimental method for investigation of the emission pattern characteristics of individual field emission tips using a CMOS image sensor}, series = {38th International Vacuum Nanoelectronics Conference (IVNC)}, booktitle = {38th International Vacuum Nanoelectronics Conference (IVNC)}, publisher = {IEEE}, doi = {10.1109/IVNC65669.2025.11121040}, pages = {2}, abstract = {The emission pattern characteristics of individual silicon field emission tips were investigated using a CMOS image sensor. The quality of the image was improved by spatial and temporal averaging, so that individual emission centers could be identified and their temporal changes investigated. By mapping the emission current onto the image, the distribution of the current density on the image sensor could be calculated.}, language = {en} } @inproceedings{BaranowskiZychlaKrysztofetal., author = {Baranowski, Kamil and Zychla, Michał and Krysztof, Michał and Ż{\´o}łtowski, Michał and Hausladen, Matthias and Schreiner, Rupert and Kn{\´a}pek, Aleksandr}, title = {Experimenal method for studying electron beams in gaseous environments using a CMOS image sensor}, series = {38th International Vacuum Nanoelectronics Conference (IVNC)}, booktitle = {38th International Vacuum Nanoelectronics Conference (IVNC)}, publisher = {IEEE}, isbn = {979-8-3315-3705-0}, doi = {10.1109/IVNC65669.2025.11120851}, pages = {2}, abstract = {Detecting and analyzing electron beams in atmospheric conditions remains a significant challenge due to scattering and absorption of electrons by gas molecules. In this work, a novel approach using a CMOS image sensor for real-time electron beam detection after its transmission through air is presented. The setup enables visualization of beam divergence, emission profiles, and dynamic behavior under atmospheric pressure. Presented results demonstrate the potential of CMOS image sensor for electron beam analysis in gaseous environment.}, language = {en} } @inproceedings{AllahamBurdaKnapeketal., author = {Allaham, Mohammad M. and Burda, Daniel and Kn{\´a}pek, Alexandr and Krysztof, Michał and Baranowski, Kamil and Hausladen, Matthias and Schreiner, Rupert}, title = {Testing the performance of tungsten-graphite cathodes as MEMS Electron microscope electron source}, series = {38th International Vacuum Nanoelectronics Conference (IVNC)}, booktitle = {38th International Vacuum Nanoelectronics Conference (IVNC)}, publisher = {IEEE}, doi = {10.1109/IVNC65669.2025.11121041}, pages = {2}, abstract = {This work presents preliminary results of the performance testing of exfoliated graphene layers deposited on the nanotip of a tungsten field emission cathode. The obtained tungsten-graphite cathodes were then operated in a 3D-printed MEMS electron microscope testing model for later applications. The results were promising, where a maximum emission current of 50.2 μA was obtained with an extraction voltage of 1 kV and anode voltage of 3 kV.}, language = {en} } @inproceedings{AsgharzadeBartlHausladenetal., author = {Asgharzade, Ali and Bartl, Mathias and Hausladen, Matthias and Chen, Yang and Buchner, Philipp and Edler, Simon and Bachmann, Michael and She, Juncong and Schreiner, Rupert}, title = {Investigation on the influence of internal voltage drops on the emission behavior of silicon field emission arrays using CMOS image sensor}, series = {38th International Vacuum Nanoelectronics Conference (IVNC)}, booktitle = {38th International Vacuum Nanoelectronics Conference (IVNC)}, publisher = {IEEE}, doi = {10.1109/IVNC65669.2025.11120937}, pages = {2}, abstract = {In this paper we report on an improved measurement and analysis method for determining the emission current distribution of field emitter arrays with CMOS sensors. It can also be used for field emission arrays where not all surfaces of the emitters are at the same electrical potential (e.g. for p-doped Si tips, where a strong current saturation occurs). To demonstrate the functionality of this method, a n-doped field emission array was measured using a variable external series resistance. Brightness variations in emission spots were analyzed to re-calculate the known series resistances for comparison. The re-calculated value is in good agreement with the actual value of the resistance. This method offers a quantitative approach to assess internal voltage drop effects on field emission using optical readout}, language = {en} }