@inproceedings{DeclerqClementSchubertetal., author = {Declerq, Michel and Cl{\´e}ment, F. and Schubert, Martin J. W. and Harb, Adnan and Dutoit, Michel}, title = {Design and Optimization of High-Voltage CMOS Devices Compatible wih a Standard 5V CMOS Technology}, series = {Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA}, booktitle = {Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA}, isbn = {0-7803-0826-3}, doi = {10.1109/CICC.1993.590766}, pages = {24.6.1 -- 24.6.4}, abstract = {High-voltage n- and p-MOSFETs fully compatible with a standard 5 V CMOS technology have been designed, optimized, and fabricated. No process changes are required. By modifying the logical equations generating one of the physical masks from the design masks, a p-type buffer region for the high-voltage p-MOS was easily implemented. This modification does not affect the low-voltage part of the circuits. These high-voltage devices have been used successfully as output drivers in semicustom arrays, and as building blocks for custom low- to high-voltage output interfaces. Aspects of reliability, device protection, and circuit design techniques are addressed.}, language = {en} }