@article{SchreinerKoerblGraebeldingeretal., author = {Schreiner, Rupert and K{\"o}rbl, M. and Gr{\"a}beldinger, H. and Gentner, Jean-Louis and Schweizer, H.}, title = {Laterally gain-coupled 1.57 [micro sign]m DFB lasers with chromium surface grating and self-aligned Ti/Pt/Au ohmic contact}, series = {Electronics Letters}, volume = {36}, journal = {Electronics Letters}, number = {7}, publisher = {The Institution of Engineering and Technology, IET}, issn = {0013-5194}, doi = {10.1049/el:20000500}, pages = {636 -- 637}, abstract = {A simple method for fabricating gain coupled DFB lasers with lateral surface chromium Bragg gratings and self-aligned low capacitance ohmic contacts is reported. These InGaAsP/InP lasers show monomode emission with a sidemode suppression ratio of 40 dB. For 243 µm long devices a continuous wave threshold current of 17 mA was measured at room temperature.}, language = {en} } @article{SchmidtDenkerDashielletal., author = {Schmidt, Oliver G. and Denker, Ullrich and Dashiell, Michael W. and Jin-Phillipp, Neng Yun and Eberl, Karl and Schreiner, Rupert and Gr{\"a}beldinger, Hedwig and Schweizer, Heinz C. and Christiansen, Silke H. and Ernst, Frank}, title = {Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors}, series = {Materials Science and Engineering B}, volume = {89}, journal = {Materials Science and Engineering B}, number = {1-3}, publisher = {Elsevier}, address = {New York, NY}, issn = {1873-4944}, doi = {10.1016/S0921-5107(01)00810-8}, pages = {101 -- 105}, abstract = {Self-assembled and coherently strained Ge dots were grown on a Si/SiGe superlattice, which was deposited on a flat Si(001) substrate surface patterned with a regular array of straight trenches. The superlattice translates the surface modulation of the substrate into a strain-field modulation, which causes the Ge dots on its surface to form along straight lines above the buried trenches. This approach provides self-assembled Ge dots with excellent lateral periodicity, which might be useful for fabricating dot-based field-effect-transistors (DotFETs). Here, we propose the concept of a modulation-doped p-channel DotFET (p-MOD-DotFET). The p-MOD-DotFET relies on embedded Ge-rich nanostructures, which provide p-channels through the Ge-rich dots. A high Ge concentration in the dots is desirable in order to exploit the high hole mobility of Ge-rich material. We show that the commonly observed Si-Ge intermixing during Si capping of Ge dots can be suppressed by overgrowing the islands at low temperature.}, language = {en} }