@book{DehlingerBanarjeeBaurMelnyketal., author = {Dehlinger, F. and Banarjee, M. and Baur-Melnyk, A. and Berth, A. and B{\"o}keler, U.W. and Brandt, Hanna and Brunnader, L. and B{\"u}ttner, Carl Christopher and Clausen, J. and Eden, L. and Englert, Carsten and Freislederer, F. and Grimm, C. and Grossmann, Irmgard and Jung, C. and Kopkow, C. and Krifter, R.M. and Martetschl{\"a}ger, F. and Mehrens, D. and Michalk, Katrin and M{\"u}ller-Rath, Ralf and Pfingsten, Andrea and Prill, R. and Schmalzl, J. and W{\"o}rtler, K.}, title = {Schultersteife : eine S2e Leitlinie der Deutschen Gesellschaft f{\"u}r Orthop{\"a}die und Unfallchirurgie e.V. (DGOU) mit Beteiligung der Deutsche Vereinigung f{\"u}r Schulter- und Ellenbogenchirurgie e.V. (DVSE)}, edition = {Version 1.0}, publisher = {AWMF online}, address = {Berlin}, pages = {69}, abstract = {Bei der Schultersteife handelt es sich um ein h{\"a}ufiges Krankheitsbild in der Orthop{\"a}die bzw. Schulterchirurgie, das sowohl bei {\"A}rztinnen und {\"A}rzten (Allgemeinmedizinerinnen und mediziner, Fach{\"a}rztinnen und -{\"a}rzte) als auch bei sonstigem medizinischem Fachpersonal, z.B. der Physiotherapie oder Pflege, nur einen geringen Bekanntheitsgrad besitzt. Zielorientierung dieser Leitlinie war es, eine fundierte Hilfestellung und Richtlinie in Bezug auf das Krankheitsbild f{\"u}r {\"A}rztinnen, {\"A}rzte und medizinisches Fachpersonal zu schaffen, den aktuellen evidenz-basierten Wissensstand zu vermitteln und eine bessere Patientinnen- und Patientenversorgung zu erzielen, inkl. der intensiven Aufkl{\"a}rung der Betroffenen durch die behandelnden Berufsgruppen und - wenn von den Betroffenen gew{\"u}nscht - einer gemeinsamen Entscheidungsfindung bez{\"u}glich der Behandlung.}, language = {de} } @article{SchmidtKroegerFlegeetal., author = {Schmidt, Thomas and Kr{\"o}ger, Roland and Flege, Jan Ingo and Horn-von Hoegen, Michael and Clausen, T. and Falta, J. and Janzen, Aandreas and Zahl, P. and Kury, P. and Kammler, Martin}, title = {Less strain energy despite fewer misfit dislocations: the impact of ordering}, series = {Physical review letters}, volume = {96}, journal = {Physical review letters}, number = {6}, publisher = {APS}, doi = {10.1103/PhysRevLett.96.066101}, abstract = {The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.}, language = {en} } @article{SchmidtKroegerClausenetal., author = {Schmidt, Th. and Kr{\"o}ger, R. and Clausen, T. and Falta, J. and Janzen, A. and Kammler, Martin and Kury, P. and Zahl, P. and Horn-von Hoegen, Michael}, title = {Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface}, series = {Applied Physics Letters}, volume = {86}, journal = {Applied Physics Letters}, number = {11}, publisher = {AIP}, doi = {10.1063/1.1882760}, abstract = {For a characterization of interface and "bulk" properties of Ge films grown on Si(111) by Sb surfactant-mediated epitaxy, grazing incidence x-ray diffraction and transmission electron microscopy have been used. The interface roughness, defect structure, and strain state have been investigated in dependence of film thickness and growth temperature. For all growth parameters, atomically smooth interfaces are observed. For thin Ge layers, about 75\% of the strain induced by the lattice mismatch is relaxed by misfit dislocations at the Ge/Si interface. Only a slight increase of the degree of relaxation is found for thicker films. At growth temperatures below about 600 °C, the formation of twins is observed, which can be avoided at higher temperatures.}, language = {en} }