@phdthesis{Schubert, author = {Schubert, Martin J. W.}, title = {Eindimensionale Modellierung von SOI MOSFETs}, address = {Hamburg}, language = {de} } @article{SchubertHoefflingerSchroederetal., author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Schr{\"o}der, D. and Zingg, Ren{\´e} P.}, title = {1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials}, series = {Microelectronic Engineering}, volume = {15}, journal = {Microelectronic Engineering}, number = {1-4}, doi = {10.1016/0167-9317(91)90221-X}, pages = {237 -- 240}, abstract = {Distinct electron and hole quasi-Fermi potentials, {\o}f,n and {\o}f,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of {\o}f,n, {\o}f,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of {\o}f,p(t) depends on the device history and generation/recombination rates.}, language = {en} } @article{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {An Analytical Model for Strongly Inverted and Accumulated Silicon Films}, series = {Solid-State Electronics}, volume = {33}, journal = {Solid-State Electronics}, number = {12}, publisher = {Elsevier}, doi = {10.1016/0038-1101(90)90136-3}, pages = {1553 -- 1567}, abstract = {An analytical model for the spatial distribution of potential, electric field and carrier densities is presented, assuming uniform doping density and constant quasi-Fermi potentials in the direction of modeling. Starting from the current relations a differential equation respecting two-dimensional effects is developed and solved approximately by decomposition in three regions with different preconditions: (a) flatband region, (b) constant spacecharge density and (c) strong inversion or accumulation. Inaccuracies arise mainly from violated preconditions at the interfaces between the different regions. Two-dimensional effects are respected in the analytical model of (b) only but they influence region (c) by means of boundary conditions at the interface of (b) and (c). The investigations of this paper are focused to region (c). This part of our model is identical to the model of Hauser and Littlejohn[1]. They integrated a simplified form of the semiconductor-Poisson equation twice but were restricted to one-dimensional applications and thermal equilibrium. Our derivation allows for large electric fields and current densities perpendicular to the direction of modeling. From analytical considerations confirmed by numerical experiments we suggest preference to the gradual channel condition, with x and y defined according to Fig. 1. This definition allows the potentials to vary significantly with respect to y. We found that this holds for the quasi-Fermi potentials also. Furthermore an empirical model for the maximum width of strong-inversion layers in uniformly doped silicon films is presented in eqn (46).}, language = {en} } @inproceedings{DeclerqSchubertClement, author = {Declerq, Michel and Schubert, Martin J. W. and Cl{\´e}ment, F.}, title = {5V-to-75V CMOS Output Interfaces}, series = {Proceedings of the1993 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 24-26 1993, San Francisco, CA, USA}, booktitle = {Proceedings of the1993 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 24-26 1993, San Francisco, CA, USA}, doi = {10.1109/ISSCC.1993.280014}, pages = {162 -- 163}, abstract = {A family of CMOS low- to high-voltage output interface circuits based on a standard, unmodified low-voltage CMOS technology is described. Using only thin-oxide high-voltage (HV) devices with reduced V/sub GS/ (gate-to-source voltage) swing, it makes use of level-shift techniques to meet the constraints on the gate control signals. These static circuits permit the full output voltage swing of V/sub DDH/, while keeping the V/sub GS/ swing of the output devices within the safety limits, including during HV supply transients. Using a standard 2- mu m n-well CMOS technology, reliable, reproducible V/sub DS/ breakdown voltages as high as 120 V and 80 V have been obtained for HV-nMOS and HV-pMOS devices, respectively.< >}, language = {en} } @inproceedings{DeclerqClementSchubertetal., author = {Declerq, Michel and Cl{\´e}ment, F. and Schubert, Martin J. W. and Harb, Adnan and Dutoit, Michel}, title = {Design and Optimization of High-Voltage CMOS Devices Compatible wih a Standard 5V CMOS Technology}, series = {Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA}, booktitle = {Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA}, isbn = {0-7803-0826-3}, doi = {10.1109/CICC.1993.590766}, pages = {24.6.1 -- 24.6.4}, abstract = {High-voltage n- and p-MOSFETs fully compatible with a standard 5 V CMOS technology have been designed, optimized, and fabricated. No process changes are required. By modifying the logical equations generating one of the physical masks from the design masks, a p-type buffer region for the high-voltage p-MOS was easily implemented. This modification does not affect the low-voltage part of the circuits. These high-voltage devices have been used successfully as output drivers in semicustom arrays, and as building blocks for custom low- to high-voltage output interfaces. Aspects of reliability, device protection, and circuit design techniques are addressed.}, language = {en} } @article{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET}, series = {IEEE Electron Device Letters}, volume = {12}, journal = {IEEE Electron Device Letters}, number = {9}, doi = {10.1109/55.116927}, pages = {489 -- 491}, abstract = {A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< >}, language = {en} } @misc{DeclerqSchubert, author = {Declerq, Michel and Schubert, Martin J. W.}, title = {Circuit Interm{\´e}diaire entre un Circuit Logique {\`a} Basse-Tension et un Etage de Sortie {\`a} Haute-Tension R{\´e}alis{\´e}s dans une Technologie CMOS Standard}, abstract = {La pr{\´e}sente invention concerne un circuit interm{\´e}diaire entre un circuit logique a basse tension et un {\´e}tage de sortie {\`a} haute tension r{\´e}alis{\´e}s dans une technologie CMOS standard. L'{\´e}tage de sortie (20) comporte deux transistors respectivement {\`a} canal N et {\`a} canal P, r{\´e}alis{\´e}s selon une technologie CMOS standard. Le circuit interm{\´e}diaire comporte un translateur de niveau de tension (21) coupl{\´e} entre un circuit logique d'entr{\´e}e SL et ledit {\´e}tage de sortie (20). Ce translateur de niveau de tension (21) est r{\´e}alis{\´e} selon une technologie CMOS standard et est constitu{\´e} d'au moins deux blocs de base identiques formant des miroirs de tension interconnect{\´e}s de fa{\c{c}}on crois{\´e}e. Ce circuit est utilis{\´e} pour commander des transducteurs, des {\´e}crans plasma et des actionneurs {\´e}lectrom{\´e}caniques.}, language = {fr} } @misc{BeimlerLeisslEbneretal., author = {Beimler, Josef and Leißl, Caroline and Ebner, Lena and Elsner, Michael and M{\"u}hlbauer, Gerhard and Kohlert, Dieter and Schubert, Martin J. W. and Weiß, Andreas P. and Sterner, Michael and Raith, Thomas and Afranseder, Martin and Krapf, Tobias and Mottok, J{\"u}rgen and Siemers, Christian and Großmann, Benjamin and H{\"o}cherl, Johannes and Schlegl, Thomas and Schneider, Ralph and Milaev, Johannes and Rampelt, Christina and Roduner, Christian and Glowa, Christoph and Bachl, Christoph and Schliekmann, Claus and Gnan, Alfons and Grill, Martin and Ruhland, Karl and Piehler, Thomas and Friers, Daniel and Wels, Harald and Pflug, Kenny and Kucera, Markus and Waas, Thomas and Schlachetzki, Felix and Boy, Sandra and Pemmerl, Josef and Leis, Alexander and Welsch, Andreas F.X. and Graf, Franz and Zenger, Gerhard and Volbert, Klaus and Waas, Thomas and Scherzinger, Stefanie and Klettke, Meike and St{\"o}rl, Uta and Heyl, C. and Boldenko, A. and Monkman, Gareth J. and Kujat, Richard and Briem, Ulrich and Hierl, Stefan and Talbot, Sebastian and Schmailzl, Anton and Ławrowski, Robert Damian and Prommesberger, Christian and Langer, Christoph and Dams, Florian and Schreiner, Rupert and Valentino, Piergiorgio and Romano, Marco and Ehrlich, Ingo and Furgiuele, Franco and Gebbeken, Norbert and Eisenried, Michael and Jungbauer, Bastian and Hutterer, Albert and Bauhuber, Michael and Mikrievskij, Andreas and Argauer, Monika and Hummel, Helmut and Lechner, Alfred and Liebetruth, Thomas and Schumm, Michael and Joseph, Saskia and Reschke, Michael and Soska, Alexander and Schroll-Decker, Irmgard and Putzer, Michael and Rasmussen, John and Dendorfer, Sebastian and Weber, Tim and Al-Munajjed, Amir Andreas and Verkerke, Gijsbertus Jacob and Renkawitz, Tobias and Haug, Sonja and Rudolph, Clarissa and Zeitler, Annika and Schaubeck, Simon and Steffens, Oliver and Rechenauer, Christian and Schulz-Brize, Thekla and Fleischmann, Florian and Kusterle, Wolfgang and Beer, Anne and Wagner, Bernd and Neidhart, Thomas}, title = {Forschungsbericht 2013}, editor = {Baier, Wolfgang}, address = {Regensburg}, organization = {Ostbayerische Technische Hochschule Regensburg}, doi = {10.35096/othr/pub-799}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-7990}, pages = {80}, language = {de} } @misc{WeberDendorferSuessetal., author = {Weber, Karsten and Dendorfer, Sebastian and S{\"u}ß, Franz and Kubowitsch, Simone and Schratzenstaller, Thomas and Haug, Sonja and Mohr, Christa and Kiesl, Hans and Drechsler, J{\"o}rg and Westner, Markus and Kobus, J{\"o}rn and Schubert, Martin J. W. and Zenger, Stefan and Pietsch, Alexander and Weiß, Josef and Hinterseer, Sebastian and Schieck, Roland and Scherzinger, Stefanie and Klettke, Meike and Ringlstetter, Andreas and St{\"o}rl, Uta and Bissyand{\´e}, Tegawend{\´e} F. and Seeburger, Achim and Schindler, Timo and Ramsauer, Ralf and Kiszka, Jan and K{\"o}lbl, Andreas and Lohmann, Daniel and Mauerer, Wolfgang and Maier, Johannes and Scorna, Ulrike and Palm, Christoph and Soska, Alexander and Mottok, J{\"u}rgen and Ellermeier, Andreas and V{\"o}gele, Daniel and Hierl, Stefan and Briem, Ulrich and Buschmann, Knut and Ehrlich, Ingo and Pongratz, Christian and Pielmeier, Benjamin and Tyroller, Quirin and Monkman, Gareth J. and Gut, Franz and Roth, Carina and Hausler, Peter and Bierl, Rudolf and Prommesberger, Christian and Ławrowski, Robert Damian and Langer, Christoph and Schreiner, Rupert and Huang, Yifeng and She, Juncong and Ottl, Andreas and Rieger, Walter and Kraml, Agnes and Poxleitner, Thomas and Hofer, Simon and Heisterkamp, Benjamin and Lerch, Maximilian and Sammer, Nike and Golde, Olivia and Wellnitz, Felix and Schmid, Sandra and Muntschick, Claudia and Kusterle, Wolfgang and Paric, Ivan and Br{\"u}ckl, Oliver and Haslbeck, Matthias and Schmidt, Ottfried and Schwanzer, Peter and Rabl, Hans-Peter and Sterner, Michael and Bauer, Franz and Steinmann, Sven and Eckert, Fabian and Hofrichter, Andreas}, title = {Forschungsbericht 2017}, editor = {Baier, Wolfgang}, address = {Regensburg}, organization = {Ostbayerische Technische Hochschule Regensburg}, isbn = {978-3-9818209-3-5}, doi = {10.35096/othr/pub-1383}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-13835}, subject = {Forschung}, language = {de} }