@inproceedings{DeclerqClementSchubertetal., author = {Declerq, Michel and Cl{\´e}ment, F. and Schubert, Martin J. W. and Harb, Adnan and Dutoit, Michel}, title = {Design and Optimization of High-Voltage CMOS Devices Compatible wih a Standard 5V CMOS Technology}, series = {Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA}, booktitle = {Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA}, isbn = {0-7803-0826-3}, doi = {10.1109/CICC.1993.590766}, pages = {24.6.1 -- 24.6.4}, abstract = {High-voltage n- and p-MOSFETs fully compatible with a standard 5 V CMOS technology have been designed, optimized, and fabricated. No process changes are required. By modifying the logical equations generating one of the physical masks from the design masks, a p-type buffer region for the high-voltage p-MOS was easily implemented. This modification does not affect the low-voltage part of the circuits. These high-voltage devices have been used successfully as output drivers in semicustom arrays, and as building blocks for custom low- to high-voltage output interfaces. Aspects of reliability, device protection, and circuit design techniques are addressed.}, language = {en} } @phdthesis{Schubert, author = {Schubert, Martin J. W.}, title = {Eindimensionale Modellierung von SOI MOSFETs}, address = {Hamburg}, language = {de} } @article{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET}, series = {IEEE Electron Device Letters}, volume = {12}, journal = {IEEE Electron Device Letters}, number = {9}, doi = {10.1109/55.116927}, pages = {489 -- 491}, abstract = {A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< >}, language = {en} } @inproceedings{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {A New Analytical Charge Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET}, series = {Superlattices and Microstructures}, volume = {7}, booktitle = {Superlattices and Microstructures}, number = {4}, publisher = {Elsevier}, doi = {10.1016/0749-6036(90)90218-V}, pages = {323 -- 326}, abstract = {An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model.}, language = {en} } @misc{Spirkl, type = {Master Thesis}, author = {Spirkl, Florian}, title = {Vergleichende rechnerische Untersuchungen zur Lastaufteilung und Setzungen von Stabilisierungss{\"a}ulen mit Lasttransferschichten}, address = {Regensburg}, doi = {10.35096/othr/pub-1571}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-15713}, school = {Ostbayerische Technische Hochschule Regensburg}, pages = {121}, abstract = {Die Erschließung von Neubaufl{\"a}chen, steigende Bauwerkslasten und strengere Anforderungen an Setzungen und Setzungsdifferenzen f{\"u}hren zu einem steigenden Bedarf an Tiefgr{\"u}ndungsmaßnahmen. Eine relativ junge Entwicklung auf diesem Gebiet ist die Anwendung von Stabilisierungss{\"a}ulen (StS) und pfahl{\"a}hnlichen Tragelementen als Alternative zur konventionellen Pfahlgr{\"u}ndung. Auf Grund der im Vergleich zum Pfahl geringeren Tragf{\"a}higkeit der StS werden diese zumeist als „S{\"a}ulenwald" angeordnet und die abzutragende Last {\"u}ber eine Lasttransferschicht (LTS) auf die einzelnen StS abgeleitet. Zus{\"a}tzlich wird h{\"a}ufig eine oder mehrere Geogitterlagen eingebracht, was zur Erh{\"o}hung des Lastanteils der StS f{\"u}hrt. Ein g{\"a}ngies Anwendungsbeispiel hierf{\"u}r ist z.B. die Gr{\"u}ndung eines Damms. {\"U}ber die Lastaufteilung zwischen StS und anstehender Weichschicht wurden im Laufe der Jahre verschiedenste Theorien und Berechnungsans{\"a}tze ver{\"o}ffentlicht. Zun{\"a}chst wird eine Auswahl verschiedener geschlossener Berechnungsans{\"a}tze f{\"u}r den 3-dimensionalen Fall vorgestellt und miteinander verglichen. Diesen ist gemein, dass f{\"u}r die Lastaufteilung lediglich die bodenmechanischen Eigenschaften der LTS und die geometrischen Parameter ben{\"o}tigt werden. Eine Ber{\"u}cksichtigung der anstehenden Weichschicht ist z.B. bei der iterativen Berechnung mittels Lasttransfermethode oder bei FE-Berechnungen m{\"o}glich. Diese Ans{\"a}tze werden, da durch die Ber{\"u}cksichtigung der Eigenschaften der Weichschicht weitere Freiheitsgrade entstehen, gesondert miteinander verglichen. Abschließend wird an Hand zweier Beispiele die Komplexit{\"a}t der Problemstellung „Ermittlung der Laustaufteilung zwischen StS und WS" aufgezeigt.}, language = {de} } @inproceedings{RomanoMicklitzOlbrichetal., author = {Romano, Marco and Micklitz, Matthias and Olbrich, Florian and Bierl, Rudolf and Ehrlich, Ingo and Gebbeken, Norbert}, title = {Experimental investigation of damping properties of unidirectionally and fabric reinforces plastics by the free decay method}, series = {Proceeding of the 15th International Materials Symposium (IMSP´2014), Pamukkale University (Denizli, Turkey), 15./17. October 2014}, booktitle = {Proceeding of the 15th International Materials Symposium (IMSP´2014), Pamukkale University (Denizli, Turkey), 15./17. October 2014}, pages = {665 -- 679}, language = {en} } @inproceedings{vanderWeerdBierlMatysik, author = {van der Weerd, Bastiaan and Bierl, Rudolf and Matysik, Frank-Michael}, title = {A Conductivity Probe for the Determination of Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO)}, series = {Electrochemistry 2014, September 22 - 24, Mainz}, booktitle = {Electrochemistry 2014, September 22 - 24, Mainz}, language = {en} } @misc{vanderWeerdBierlMatysik, author = {van der Weerd, Bastiaan and Bierl, Rudolf and Matysik, Frank-Michael}, title = {A Conductivity Probe for Determination of the Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO)}, series = {Proceedings of the 9th ISC Modern Analytical Chemistry 2013, Prag}, journal = {Proceedings of the 9th ISC Modern Analytical Chemistry 2013, Prag}, language = {en} } @misc{RueckHofmannBierl, author = {R{\"u}ck, Thomas and Hofmann, Matthias and Bierl, Rudolf}, title = {Development of a miniaturized photoacoustic multigas sensing system for trace gas measurement}, series = {17th International Conference on Photoacoustic and Photothermal Phenomena, Oct. 20-24, 2013, Suzhou China}, journal = {17th International Conference on Photoacoustic and Photothermal Phenomena, Oct. 20-24, 2013, Suzhou China}, language = {en} } @inproceedings{vanderWeerdBierlMatysik, author = {van der Weerd, Bastiaan and Bierl, Rudolf and Matysik, Frank-Michael}, title = {A Conductivity Probe for the Determination of Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO)}, series = {analytica Conference 2014, 1. bis 4. April, M{\"u}nchen}, booktitle = {analytica Conference 2014, 1. bis 4. April, M{\"u}nchen}, language = {en} } @inproceedings{HofmannBierlRueck, author = {Hofmann, Matthias and Bierl, Rudolf and R{\"u}ck, Thomas}, title = {Implementation of a dual-phase lock-in amplifier on a TMS320C5515 digital signal processor}, series = {Proceedings of the 5th European DSP Education and Research Conference (EDERC), 13-14 Sept. 2012, Amsterdam}, booktitle = {Proceedings of the 5th European DSP Education and Research Conference (EDERC), 13-14 Sept. 2012, Amsterdam}, doi = {10.1109/EDERC.2012.6532217}, abstract = {A digital dual-phase lock-in amplifier that is capable to run on a low-cost, low-power platform comprising a 16-bit fixed-point digital signal processor was developed. This is achieved by a set of optimised digital filters including an exponential averager to adjust the time constant of the overall filter. The reference frequency is generated using a direct digital synthesis source utilising angle decomposition with a resolution of 1 Hz. The digital lock-in algorithm is described and the performance of the algorithm is analysed. The experimental results show that the developed lock-in amplifier achieves similar performance to a commercially available lock-in amplifier.}, language = {en} } @techreport{UngerRueckLandgrafetal., author = {Unger, J. and R{\"u}ck, Thomas and Landgraf, Ferdinand and Bierl, Rudolf}, title = {Herstellung und Analyse der Resonanzfrequenz eines MEMS Cantilever f{\"u}r das CEPAS Verfahren}, abstract = {Diese Abhandlung beschreibt das Konzept eines mikroeletromechanischen Systems (MEMS), das im Messverfahren der cantilever enhanced photoacoustic spectroscopy (CEPAS) Verwendung finden soll. Es wird die Herstellung eines einseitig eingespannten Biegebalkens aus Silizium mittels deep reactiv ion etching (DRIE) beschrieben. Des Weiteren wird die Resonanzfrequenz dieses Cantilevers mit Hilfe Laservibrometertechnik untersucht. Die resultierenden resonanten Schwingungen 0.Ordnung werden mit den Ergebnissen einer vereinfachten theoretischen N{\"a}herung verglichen. Die Messergebnisse stehen in gutem Zusammenhang mit den theoretischen Werten. Solche Cantilever, die aus silicon on insula tor (SOI) Wafer angefertigt wurden, weisen bei einer Zielfrequenz ein mittlere Abweichung von Δf = 118±26Hz (bzw.Δf =0,76±0,17\%) auf.}, language = {de} }