@incollection{IlmakunnasSkirbekkvanOursetal., author = {Ilmakunnas, Pekka and Skirbekk, Vegard and van Ours, Jan and Weiss, Matthias}, title = {Ageing and Productivty}, series = {Ageing, Health, and Productivity: The Economics of Increased Life Expectancy}, booktitle = {Ageing, Health, and Productivity: The Economics of Increased Life Expectancy}, editor = {Garibaldi, Pietro}, publisher = {Oxford University Press}, address = {Oxford}, pages = {135 -- 219}, subject = {Alter}, language = {en} } @article{Weiss, author = {Weiss, Matthias}, title = {Skill-Biased Technological Change}, series = {Economics Letters}, volume = {100}, journal = {Economics Letters}, number = {3}, doi = {10.1016/j.econlet.2008.03.022}, pages = {439 -- 441}, abstract = {This paper presents a model in which perpetual skill-biased technological change does not lead to ever-increasing wage inequality. The model is consistent with the increase in wage inequality in the 1980s and the subsequent stabilization in the 1990s.}, language = {en} } @incollection{BoerschSupanDuezguenWeiss, author = {B{\"o}rsch-Supan, Axel and D{\"u}zg{\"u}n, Ismail and Weiss, Matthias}, title = {Sinkende Produktivit{\"a}t alternder Belegschaften?}, series = {L{\"a}nger leben, arbeiten und sich engagieren. Chancen werteschaffender Besch{\"a}ftigung bis ins Alter}, booktitle = {L{\"a}nger leben, arbeiten und sich engagieren. Chancen werteschaffender Besch{\"a}ftigung bis ins Alter}, editor = {Prager, Jens U. and Schleiter (Hrsg.), Andr{\´e}}, publisher = {Bertelsmann Stiftung}, address = {G{\"u}tersloh}, isbn = {3892049130}, pages = {85 -- 102}, language = {de} } @article{BoerschSupanWeiss, author = {B{\"o}rsch-Supan, Axel and Weiss, Matthias}, title = {Erfahrungswissen in der Arbeitswelt}, series = {Potenziale im Altern. Chancen und Aufgaben f{\"u}r Individuum und Gesellschaft}, journal = {Potenziale im Altern. Chancen und Aufgaben f{\"u}r Individuum und Gesellschaft}, editor = {Kruse, Andreas}, publisher = {AKA}, address = {Heidelberg}, pages = {221 -- 234}, language = {de} } @article{Weiss, author = {Weiss, Matthias}, title = {Absenteeism in Age-Diverse Work Teams}, series = {Labour Markets and Demographic Change}, journal = {Labour Markets and Demographic Change}, editor = {Kuhn, Michael and Ochsen, Carsten}, publisher = {VS Verlag}, address = {Wiesbaden}, doi = {10.1007/978-3-531-91478-7_3}, pages = {40 -- 57}, abstract = {Age-diverse work teams are being advocated as an important management tool to enhance performance and productively employ older workers. However, this advice is not founded on empirical evidence. There are very few studies that look at the relation between performance and age diversity of work teams. This lack of evidence is mainly due to a lack of available data. Information on performance and worker composition of a productive unit is available almost exclusively on the plant level in matched employer-employee data sets. But on the plant level/age heterogeneity of the workforce does not tell much about age diversity on the level where co-operation/teamwork takes place (work teams, departments, etc.). If all of the older workers work in the administration whereas all the young employees work in the production, the firm's workforce may be highly age-diverse, but work teams and departments are age-homogeneous. This problem notwithstanding, Grund and Westerg{\aa}rd-Nielsen (2005) look at the relation between productivity and the standard deviation of workers' age in a sample of 7,000 Danish firms. They find a hump-shaped relation.}, language = {en} } @article{Weiss, author = {Weiss, Matthias}, title = {Erfahrung kompensiert nachlassende F{\"a}higkeiten}, series = {Personalf{\"u}hrung}, journal = {Personalf{\"u}hrung}, number = {1}, pages = {56 -- 58}, language = {de} } @article{SternerBauer, author = {Sterner, Michael and Bauer, Franz}, title = {Power-to-X im Kontext der Energiewende und des Klimaschutzes in Deutschland}, series = {Chemie-Ingenieur-Technik}, volume = {92}, journal = {Chemie-Ingenieur-Technik}, number = {1-2}, publisher = {Wiley}, issn = {0009-286X}, doi = {10.1002/cite.201900167}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-11669}, pages = {85 -- 90}, abstract = {Um den Einfluss verschiedener Power-to-X-Verfahren auf die Transformation des deutschen Energiesystems und das Erreichen der Klimaschutzziele zu {\"u}berpr{\"u}fen, wurde ein sektor{\"u}bergreifendes Energiesystemmodel entwickelt. Die daraus gewonnenen Ergebnisse zeigen: F{\"u}r eine erfolgreiche Energiewende ist der Einsatz von Power-to-X in Zukunft unverzichtbar. Vor allem in Bereichen und Sektoren, in denen hohe Energiedichten erforderlich und nur wenig andere Optionen zur Defossilisierung vorhanden sind, werden Power-to-X-Technologien zwingend notwendig.}, subject = {Power-to-Gas}, language = {de} } @article{SchubertHoefflingerSchroederetal., author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Schr{\"o}der, D. and Zingg, Ren{\´e} P.}, title = {1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials}, series = {Microelectronic Engineering}, volume = {15}, journal = {Microelectronic Engineering}, number = {1-4}, doi = {10.1016/0167-9317(91)90221-X}, pages = {237 -- 240}, abstract = {Distinct electron and hole quasi-Fermi potentials, {\o}f,n and {\o}f,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of {\o}f,n, {\o}f,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of {\o}f,p(t) depends on the device history and generation/recombination rates.}, language = {en} } @inproceedings{Schubert, author = {Schubert, Martin J. W.}, title = {Mixed Analog-Digital Signal Modeling Using Event-Driven VHDL}, series = {X Brazilian Symposium on Integrated Circuit Design (SBCCI'97), August 25-27 1997, Porto Alegre, Brazil}, booktitle = {X Brazilian Symposium on Integrated Circuit Design (SBCCI'97), August 25-27 1997, Porto Alegre, Brazil}, pages = {77 -- 86}, abstract = {A method for solving networks containing generic analog components such as resistors, capacitors and inductors onan event driven time axis using digital VHDL is presented. The components are modeled as complex state machines communicating with their neighbors using INOUT type ports. The method takes advantage of simulation deltas to iterate without simulation-time consumption. A limited range of implicit equations can be solved this way.}, language = {en} } @article{Schubert, author = {Schubert, Martin J. W.}, title = {70V-to-5V Differential CMOS Input Interface}, series = {IEE Electronic Letters}, volume = {30}, journal = {IEE Electronic Letters}, number = {4}, doi = {10.1049/el:19940235}, pages = {296 -- 297}, language = {en} } @inproceedings{DeclerqSchubertClement, author = {Declerq, Michel and Schubert, Martin J. W. and Cl{\´e}ment, F.}, title = {5V-to-75V CMOS Output Interfaces}, series = {Proceedings of the1993 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 24-26 1993, San Francisco, CA, USA}, booktitle = {Proceedings of the1993 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 24-26 1993, San Francisco, CA, USA}, doi = {10.1109/ISSCC.1993.280014}, pages = {162 -- 163}, abstract = {A family of CMOS low- to high-voltage output interface circuits based on a standard, unmodified low-voltage CMOS technology is described. Using only thin-oxide high-voltage (HV) devices with reduced V/sub GS/ (gate-to-source voltage) swing, it makes use of level-shift techniques to meet the constraints on the gate control signals. These static circuits permit the full output voltage swing of V/sub DDH/, while keeping the V/sub GS/ swing of the output devices within the safety limits, including during HV supply transients. Using a standard 2- mu m n-well CMOS technology, reliable, reproducible V/sub DS/ breakdown voltages as high as 120 V and 80 V have been obtained for HV-nMOS and HV-pMOS devices, respectively.< >}, language = {en} } @article{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {An Analytical Model for Strongly Inverted and Accumulated Silicon Films}, series = {Solid-State Electronics}, volume = {33}, journal = {Solid-State Electronics}, number = {12}, publisher = {Elsevier}, doi = {10.1016/0038-1101(90)90136-3}, pages = {1553 -- 1567}, abstract = {An analytical model for the spatial distribution of potential, electric field and carrier densities is presented, assuming uniform doping density and constant quasi-Fermi potentials in the direction of modeling. Starting from the current relations a differential equation respecting two-dimensional effects is developed and solved approximately by decomposition in three regions with different preconditions: (a) flatband region, (b) constant spacecharge density and (c) strong inversion or accumulation. Inaccuracies arise mainly from violated preconditions at the interfaces between the different regions. Two-dimensional effects are respected in the analytical model of (b) only but they influence region (c) by means of boundary conditions at the interface of (b) and (c). The investigations of this paper are focused to region (c). This part of our model is identical to the model of Hauser and Littlejohn[1]. They integrated a simplified form of the semiconductor-Poisson equation twice but were restricted to one-dimensional applications and thermal equilibrium. Our derivation allows for large electric fields and current densities perpendicular to the direction of modeling. From analytical considerations confirmed by numerical experiments we suggest preference to the gradual channel condition, with x and y defined according to Fig. 1. This definition allows the potentials to vary significantly with respect to y. We found that this holds for the quasi-Fermi potentials also. Furthermore an empirical model for the maximum width of strong-inversion layers in uniformly doped silicon films is presented in eqn (46).}, language = {en} } @inproceedings{Schubert, author = {Schubert, Martin J. W.}, title = {Mixed Signal Modeling in VHDL by Distributed Local Iteration}, series = {VHDL Form, Toledo, Spain, April 20-24, 1997}, booktitle = {VHDL Form, Toledo, Spain, April 20-24, 1997}, language = {en} } @inproceedings{DeclerqClementSchubertetal., author = {Declerq, Michel and Cl{\´e}ment, F. and Schubert, Martin J. W. and Harb, Adnan and Dutoit, Michel}, title = {Design and Optimization of High-Voltage CMOS Devices Compatible wih a Standard 5V CMOS Technology}, series = {Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA}, booktitle = {Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA}, isbn = {0-7803-0826-3}, doi = {10.1109/CICC.1993.590766}, pages = {24.6.1 -- 24.6.4}, abstract = {High-voltage n- and p-MOSFETs fully compatible with a standard 5 V CMOS technology have been designed, optimized, and fabricated. No process changes are required. By modifying the logical equations generating one of the physical masks from the design masks, a p-type buffer region for the high-voltage p-MOS was easily implemented. This modification does not affect the low-voltage part of the circuits. These high-voltage devices have been used successfully as output drivers in semicustom arrays, and as building blocks for custom low- to high-voltage output interfaces. Aspects of reliability, device protection, and circuit design techniques are addressed.}, language = {en} } @phdthesis{Schubert, author = {Schubert, Martin J. W.}, title = {Eindimensionale Modellierung von SOI MOSFETs}, address = {Hamburg}, language = {de} } @article{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET}, series = {IEEE Electron Device Letters}, volume = {12}, journal = {IEEE Electron Device Letters}, number = {9}, doi = {10.1109/55.116927}, pages = {489 -- 491}, abstract = {A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< >}, language = {en} } @inproceedings{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {A New Analytical Charge Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET}, series = {Superlattices and Microstructures}, volume = {7}, booktitle = {Superlattices and Microstructures}, number = {4}, publisher = {Elsevier}, doi = {10.1016/0749-6036(90)90218-V}, pages = {323 -- 326}, abstract = {An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model.}, language = {en} } @misc{Spirkl, type = {Master Thesis}, author = {Spirkl, Florian}, title = {Vergleichende rechnerische Untersuchungen zur Lastaufteilung und Setzungen von Stabilisierungss{\"a}ulen mit Lasttransferschichten}, address = {Regensburg}, doi = {10.35096/othr/pub-1571}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-15713}, school = {Ostbayerische Technische Hochschule Regensburg}, pages = {121}, abstract = {Die Erschließung von Neubaufl{\"a}chen, steigende Bauwerkslasten und strengere Anforderungen an Setzungen und Setzungsdifferenzen f{\"u}hren zu einem steigenden Bedarf an Tiefgr{\"u}ndungsmaßnahmen. Eine relativ junge Entwicklung auf diesem Gebiet ist die Anwendung von Stabilisierungss{\"a}ulen (StS) und pfahl{\"a}hnlichen Tragelementen als Alternative zur konventionellen Pfahlgr{\"u}ndung. Auf Grund der im Vergleich zum Pfahl geringeren Tragf{\"a}higkeit der StS werden diese zumeist als „S{\"a}ulenwald" angeordnet und die abzutragende Last {\"u}ber eine Lasttransferschicht (LTS) auf die einzelnen StS abgeleitet. Zus{\"a}tzlich wird h{\"a}ufig eine oder mehrere Geogitterlagen eingebracht, was zur Erh{\"o}hung des Lastanteils der StS f{\"u}hrt. Ein g{\"a}ngies Anwendungsbeispiel hierf{\"u}r ist z.B. die Gr{\"u}ndung eines Damms. {\"U}ber die Lastaufteilung zwischen StS und anstehender Weichschicht wurden im Laufe der Jahre verschiedenste Theorien und Berechnungsans{\"a}tze ver{\"o}ffentlicht. Zun{\"a}chst wird eine Auswahl verschiedener geschlossener Berechnungsans{\"a}tze f{\"u}r den 3-dimensionalen Fall vorgestellt und miteinander verglichen. Diesen ist gemein, dass f{\"u}r die Lastaufteilung lediglich die bodenmechanischen Eigenschaften der LTS und die geometrischen Parameter ben{\"o}tigt werden. Eine Ber{\"u}cksichtigung der anstehenden Weichschicht ist z.B. bei der iterativen Berechnung mittels Lasttransfermethode oder bei FE-Berechnungen m{\"o}glich. Diese Ans{\"a}tze werden, da durch die Ber{\"u}cksichtigung der Eigenschaften der Weichschicht weitere Freiheitsgrade entstehen, gesondert miteinander verglichen. Abschließend wird an Hand zweier Beispiele die Komplexit{\"a}t der Problemstellung „Ermittlung der Laustaufteilung zwischen StS und WS" aufgezeigt.}, language = {de} } @inproceedings{RomanoMicklitzOlbrichetal., author = {Romano, Marco and Micklitz, Matthias and Olbrich, Florian and Bierl, Rudolf and Ehrlich, Ingo and Gebbeken, Norbert}, title = {Experimental investigation of damping properties of unidirectionally and fabric reinforces plastics by the free decay method}, series = {Proceeding of the 15th International Materials Symposium (IMSP´2014), Pamukkale University (Denizli, Turkey), 15./17. October 2014}, booktitle = {Proceeding of the 15th International Materials Symposium (IMSP´2014), Pamukkale University (Denizli, Turkey), 15./17. October 2014}, pages = {665 -- 679}, language = {en} } @inproceedings{vanderWeerdBierlMatysik, author = {van der Weerd, Bastiaan and Bierl, Rudolf and Matysik, Frank-Michael}, title = {A Conductivity Probe for the Determination of Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO)}, series = {Electrochemistry 2014, September 22 - 24, Mainz}, booktitle = {Electrochemistry 2014, September 22 - 24, Mainz}, language = {en} } @misc{vanderWeerdBierlMatysik, author = {van der Weerd, Bastiaan and Bierl, Rudolf and Matysik, Frank-Michael}, title = {A Conductivity Probe for Determination of the Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO)}, series = {Proceedings of the 9th ISC Modern Analytical Chemistry 2013, Prag}, journal = {Proceedings of the 9th ISC Modern Analytical Chemistry 2013, Prag}, language = {en} } @misc{RueckHofmannBierl, author = {R{\"u}ck, Thomas and Hofmann, Matthias and Bierl, Rudolf}, title = {Development of a miniaturized photoacoustic multigas sensing system for trace gas measurement}, series = {17th International Conference on Photoacoustic and Photothermal Phenomena, Oct. 20-24, 2013, Suzhou China}, journal = {17th International Conference on Photoacoustic and Photothermal Phenomena, Oct. 20-24, 2013, Suzhou China}, language = {en} } @inproceedings{vanderWeerdBierlMatysik, author = {van der Weerd, Bastiaan and Bierl, Rudolf and Matysik, Frank-Michael}, title = {A Conductivity Probe for the Determination of Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO)}, series = {analytica Conference 2014, 1. bis 4. April, M{\"u}nchen}, booktitle = {analytica Conference 2014, 1. bis 4. April, M{\"u}nchen}, language = {en} } @inproceedings{HofmannBierlRueck, author = {Hofmann, Matthias and Bierl, Rudolf and R{\"u}ck, Thomas}, title = {Implementation of a dual-phase lock-in amplifier on a TMS320C5515 digital signal processor}, series = {Proceedings of the 5th European DSP Education and Research Conference (EDERC), 13-14 Sept. 2012, Amsterdam}, booktitle = {Proceedings of the 5th European DSP Education and Research Conference (EDERC), 13-14 Sept. 2012, Amsterdam}, doi = {10.1109/EDERC.2012.6532217}, abstract = {A digital dual-phase lock-in amplifier that is capable to run on a low-cost, low-power platform comprising a 16-bit fixed-point digital signal processor was developed. This is achieved by a set of optimised digital filters including an exponential averager to adjust the time constant of the overall filter. The reference frequency is generated using a direct digital synthesis source utilising angle decomposition with a resolution of 1 Hz. The digital lock-in algorithm is described and the performance of the algorithm is analysed. The experimental results show that the developed lock-in amplifier achieves similar performance to a commercially available lock-in amplifier.}, language = {en} }