@article{HerrmannBuettner, author = {Herrmann, Frank and B{\"u}ttner, Simon}, title = {Automatische Qualit{\"a}tskontrolle mittels Maschinellem Lernen und SAP Leonardo}, series = {Anwendungen und Konzepte der Wirtschaftsinformatik}, journal = {Anwendungen und Konzepte der Wirtschaftsinformatik}, number = {10}, publisher = {AKWI}, issn = {2296-4592}, pages = {46 -- 53}, abstract = {In vielen Unternehmen werden von Menschen durch Ansehen von Produkten Produktionsfehler identifiziert. Die {\"u}bersehenen Produktionsfehler f{\"u}hren zunehmend h{\"a}ufiger zu teuren Kundenreklamationen. F{\"u}r die Produktion von Fußb{\"a}llen wird in dieser Arbeit diese manuelle Qualit{\"a}tssicherung analysiert. Als Alternative werden die Fußb{\"a}lle durch einen Roboter fotografiert u nd durch maschinelles Lernen werden Produktionsfehler auf diesen digitalen Fotos identifiziert. Dieser Pr{\"u}fprozess wird in SAP Leonardo implementiert und damit wird der bereits in einem SAP System implementierte Produktionsprozess (bzw. Unternehmensprozess) erweitert, wodurch ein durchg{\"a}ngig digitalisierter Gesamtprozess implementiert wird. Dadurch werden signifikant bessere Pr{\"u}fergebnisse erreichtb und die Durchlaufzeit des Pr{\"u}fprozesses wird substantiell reduziert.}, language = {de} } @article{PrommesbergerLangerŁawrowskietal., author = {Prommesberger, Christian and Langer, Christoph and Ławrowski, Robert Damian and Schreiner, Rupert}, title = {Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behavior}, series = {Journal of Vacuum Science \& Technology B}, volume = {35}, journal = {Journal of Vacuum Science \& Technology B}, number = {1}, doi = {10.1116/1.4972519}, abstract = {The authors report on the fabrication and characterization of p-type Si tip arrays with an integrated gate electrode for applications as field emission electron sources. After the reactive ion etching of the emitters, the combined thermal dry and wet oxidation was used for both the sharpening of the emitters and for the realization of an enhanced insulation layer. Au was evaporated in a self-aligned process as gate electrode. Arrays of 16 Si tips were fabricated with tip heights of about 3 μm and tip radii of about 20 nm with integrated gate electrode concentrically positioned ≈2 μm below the tip apex. Integral measurements with an additional anode showed improved field emission properties with a reproducible and stable emission behavior. A fast activation of the tips, low onset voltages of about 30 V, and moderate field emission currents up to 0.55 μA were noticed. The field emission parameters were calculated using the Fowler-Nordheim characteristics. A pronounced saturation regime was observed, and current fluctuations of less than ±1\% were investigated for 30 min. Long-term measurements were carried out for a period of more than 8 h. In the first 6 h of operation, the authors observed a drift of the emission current from 0.35 to 0.55 μA caused by an increased emission surface.}, language = {en} } @article{BreuerBachmannDuesbergetal., author = {Breuer, Janis and Bachmann, Michael and D{\"u}sberg, Felix and Pahlke, Andreas and Edler, Simon and Langer, Christoph and Prommesberger, Christian and Ławrowski, Robert Damian and Schreiner, Rupert and Serbun, Pavel and L{\"u}tzenkirchen-Hecht, Dirk}, title = {Extraction of the current distribution out of saturated integral measurement data of p-type silicon field emitter arrays}, series = {Journal of Vacuum Science and Technology B}, volume = {36}, journal = {Journal of Vacuum Science and Technology B}, number = {5}, publisher = {AIP Publishing}, doi = {10.1116/1.5035189}, abstract = {At the moment, only complicated techniques are known for the determination of array properties of field emitter arrays such as the number of active tips, the current distribution, or the individual tip radii. In this work, a method for extracting these parameters from integral measurement data is presented. A model describing the characteristics of a single emitter, including the saturation as a function of the applied voltage and the emitter radius, is developed. It is shown that experimental data of field emitter arrays can be represented as the sum of these functions and the characteristic parameters can be fitted to field emission data of an array. Using this method, the values of the radii as well as the parameters of distribution models can be determined directly. Analysis of experimental data from p-type Si emitter arrays shows that only 1-2\% of the tips contribute significantly.}, language = {en} } @article{EdlerBachmannBreueretal., author = {Edler, Simon and Bachmann, Michael and Breuer, Janis and Dams, Florian and D{\"u}sberg, Felix and Hofmann, Martin and Jakšič, Jasna and Pahlke, Andreas and Langer, Christoph and Ławrowski, Robert Damian and Prommesberger, Christian and Schreiner, Rupert}, title = {Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup}, series = {Journal of Applied Physics}, volume = {122}, journal = {Journal of Applied Physics}, doi = {10.1063/1.4987134}, abstract = {In the present work, black-silicon field emitter arrays (FEAs) are investigated regarding the influence of residual gas pressure on the characteristics and lifetime in the high voltage triode setup. Current-voltage-characteristics at different pressure levels are recorded and show a decreasing emission current with rising pressure. This decrease can be explained by an increase of the work function and charging of the emitter surface caused by adsorbates. The emission current can be restored to its initial value by heating of the FEA up to 110 °C during active emission. With this regeneration procedure, an extended lifetime from about 20 h to 440 h at a residual gas pressure of 10-5 mbar is achieved.}, language = {en} } @misc{Zrenner, type = {Master Thesis}, author = {Zrenner, Louis}, title = {Modellierung des gekoppelten thermischen und hydraulischen Verhaltens von ZFSV-Bettungen bei erdverlegten H{\"o}chstspannungsleitungen}, doi = {10.35096/othr/pub-1790}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-17905}, school = {Ostbayerische Technische Hochschule Regensburg}, pages = {IX, 122}, abstract = {Durch die dezentrale Energiegewinnung, welche aus dem Fokus auf regenerative Stromerzeugung resultiert, ist ein Ausbau des {\"U}bertragungsnetzes alternativlos - auch mit Hinblick auf den steigenden Strombedarf in den kommenden Jahrzehnten. Der Ausbau ist bereits beschlossene Sache, schreitet aber schleppend voran. Die Gr{\"u}nde hierf{\"u}r sind jedoch nicht etwa Verz{\"o}gerungen in der Bauausf{\"u}hrung, sondern vor allem die Ablehnung innerhalb der Bev{\"o}lkerung gegen{\"u}ber dem Neubau von Stromtrassen. Jahrelange Planungs- und Genehmigungsphasen sowie regelm{\"a}ßige {\"A}nderungen der Trassenverl{\"a}ufe sind die Folge. Die B{\"u}rgerbewegungen gegen den Netzausbau sind meist mit auf dem Einfluss auf das Landschaftsbild, der Strahlungsbelastung oder L{\"a}rmbel{\"a}stigung begr{\"u}ndet. Eine Erdverlegung w{\"u}rde hinsichtlich dieser Probleme (trotz kurzfristiger Mehrbelastung w{\"a}hrend der Bauphase) eine Alternative darstellen, weist jedoch baubedingte Problematiken wie den Abtransport der Verlustw{\"a}rme auf. Bei einer klassischen Sandbettung h{\"a}ngt die W{\"a}rmeleitf{\"a}higkeit maßgeblich vom Wassergehalt des Sandes ab, welcher je nach Witterungslage und geologischen Gegebenheiten sehr stark schwankt. Als Folge muss die Trasse f{\"u}r den ung{\"u}nstigsten Fall und damit unwirtschaftlich bemessen werden. Im Rahmen des Forschungsprojekts „DC-CTL DBI" wurde eine gasisolierte HG{\"U}-Leitung (GIL) erdverlegt und einem Langzeitversuch unterzogen. Anstelle einer Sandbettung wurde jedoch ein zeitweise fließf{\"a}higer, selbstverdichtender Verf{\"u}llbaustoff (ZFSV) verwendet. F{\"u}r den Einsatz als thermische Bettung bietet ein ZFSV mehrere Eigenschaften, welche eine klassische Sandbettung nicht bietet. So ist mit Hinblick auf die verschweißte Aluminium-H{\"u}lle der GIL kein Verdichtungsaufwand n{\"o}tig, welcher bei aktueller Bauform zweifelsfrei in Sch{\"a}den resultieren w{\"u}rde. Dar{\"u}ber hinaus weisen Fl{\"u}ssigb{\"o}den durch den Bentonit-Gehalt eine h{\"o}here adsorbierende Oberfl{\"a}che auf, wodurch der Anteil des Haftwassers im Boden zunimmt und die W{\"a}rmeleitf{\"a}higkeit der Bettung in ihrer Konstanz positiv beeinflusst wird. Im Zuge dieser Arbeit wurden die thermischen und hydraulischen Transportprozesse um die GIL mittels FEM in Plaxis2D untersucht und transient {\"u}ber den gesamten Messzeitraum (18 Monate) berechnet. Hierf{\"u}r wurden die Materialparameter durch labortechnische Versuche ermittelt und die Messergebnisse einer verbauten Wetterstation als Randbedingungen (Niederschlag, Temperatur, Evapotranspiration) aufgebracht. Die Ergebnisse aus Plaxis2D wurden abschließend mit der im Feldversuch verbauten Sensorik verglichen. Es zeigte sich, dass sowohl die Boden- als auch die Leitertemperaturen nur um wenige Grad von den Messwerten der Sensorik abweichen. Anders als bei den etablierten analytischen Bemessungsrechnungen, welche stets auf Vereinfachungen basieren, k{\"o}nnen auch Effekte wie konvektiver W{\"a}rmetransport oder Austrocknung bei gleichzeitig h{\"o}herer Genauigkeit der Ergebnisse untersucht werden. Um den Rechenaufwand gering zu halten, wurden lediglich die thermischen und hydraulischen Entwicklungen und Einfl{\"u}sse des Bodens ber{\"u}cksichtigt. Es ist aber durchaus m{\"o}glich, Verformungen und Kr{\"a}fte in die Berechnung zu integrieren und so ein ganzheitliches Berechnungsmodell zu erstellen.}, language = {de} } @article{LauerGiordanoKreiteretal., author = {Lauer, Norina and Giordano, Katharina and Kreiter, Daniel and Leusch, Vera and Corsten, Sabine}, title = {"Mach mal 'ne App"}, series = {Forum Logop{\"a}die}, volume = {35}, journal = {Forum Logop{\"a}die}, number = {3}, publisher = {Schulz-Kirchner}, doi = {10.2443/skv-s-2021-53020210304}, pages = {20 -- 27}, abstract = {Die Entwicklung qualitativ hochwertiger Apps zur Gesundheitsversorgung erfordert einen aufwendigen Entwicklungsprozess, an den sich eine Evaluation der App-gest{\"u}tzten Maßnahme anschließen sollte, um Aussagen zur Wirksamkeit treffen und somit den App-Einsatz begr{\"u}nden zu k{\"o}nnen. In diesem Beitrag wird die nutzerzentrierte Entwicklung der App BaSeTaLK vorgestellt, mit der eine Tablet-gest{\"u}tzte Stimulation biographisch orientierter Gespr{\"a}che bei {\"a}lteren Menschen zur Verbesserung des psychischen Wohlbefindens erm{\"o}glicht werden soll. Nach erfolgreicher Evaluation k{\"o}nnten Logop{\"a}dInnen als MultiplikatorInnen den Einsatz der App vermitteln.}, subject = {App}, language = {de} } @misc{OPUS4-1186, title = {Geschlechtergerechtigkeit und MINT}, editor = {Rudolph, Clarissa and Reber, Anne and Dollsack, Sophia}, publisher = {Verlag Barbara Budrich}, address = {Opladen ; Berlin ; Toronto}, isbn = {978-3-8474-1674-6}, doi = {10.3224/84742519}, pages = {277}, subject = {Hochschule}, language = {de} } @article{LuehrmannWeiss, author = {L{\"u}hrmann, Melanie and Weiss, Matthias}, title = {The Effect of Working Time and Labor Force Participation on Unemployment}, series = {Economic Modelling}, volume = {27}, journal = {Economic Modelling}, number = {1}, doi = {10.1016/j.econmod.2009.07.024}, pages = {67 -- 82}, abstract = {This paper introduces a new argument into the theoretical literature on labor market effects of changes in working hours and labor force participation. We advance a general equilibrium model in which increased labor supply reduces unskilled unemployment via consumer demand: longer work hours and higher labor force participation imply higher incomes and less (leisure) time. In consequence, home production is reduced in favor of outsourcing domestic tasks to the market, shifting consumer demand toward unskill-intensive goods. Relative demand for unskilled labor rises and unemployment falls. Finally, we provide empirical support for the basic mechanisms of our model for Germany.}, language = {en} } @incollection{BoerschSupanDuezguenWeiss, author = {B{\"o}rsch-Supan, Axel and D{\"u}zg{\"u}n, Ismail and Weiss, Matthias}, title = {Altern und Produktivit{\"a}t}, series = {Produktivit{\"a}t in alternden Gesellschaften}, booktitle = {Produktivit{\"a}t in alternden Gesellschaften}, editor = {B{\"o}rsch-Supan, Axel and Erlinghagen, Marcel and Hank, Karsten and J{\"u}rges, Hendrik and Wagner, Gert G.}, publisher = {Wissenschaftliche Verlagsgesellschaft mbH}, address = {Stuttgart}, pages = {53 -- 62}, subject = {Alternde Bev{\"o}lkerung}, language = {de} } @incollection{IlmakunnasSkirbekkvanOursetal., author = {Ilmakunnas, Pekka and Skirbekk, Vegard and van Ours, Jan and Weiss, Matthias}, title = {Ageing and Productivty}, series = {Ageing, Health, and Productivity: The Economics of Increased Life Expectancy}, booktitle = {Ageing, Health, and Productivity: The Economics of Increased Life Expectancy}, editor = {Garibaldi, Pietro}, publisher = {Oxford University Press}, address = {Oxford}, pages = {135 -- 219}, subject = {Alter}, language = {en} } @article{Weiss, author = {Weiss, Matthias}, title = {Skill-Biased Technological Change}, series = {Economics Letters}, volume = {100}, journal = {Economics Letters}, number = {3}, doi = {10.1016/j.econlet.2008.03.022}, pages = {439 -- 441}, abstract = {This paper presents a model in which perpetual skill-biased technological change does not lead to ever-increasing wage inequality. The model is consistent with the increase in wage inequality in the 1980s and the subsequent stabilization in the 1990s.}, language = {en} } @incollection{BoerschSupanDuezguenWeiss, author = {B{\"o}rsch-Supan, Axel and D{\"u}zg{\"u}n, Ismail and Weiss, Matthias}, title = {Sinkende Produktivit{\"a}t alternder Belegschaften?}, series = {L{\"a}nger leben, arbeiten und sich engagieren. Chancen werteschaffender Besch{\"a}ftigung bis ins Alter}, booktitle = {L{\"a}nger leben, arbeiten und sich engagieren. Chancen werteschaffender Besch{\"a}ftigung bis ins Alter}, editor = {Prager, Jens U. and Schleiter (Hrsg.), Andr{\´e}}, publisher = {Bertelsmann Stiftung}, address = {G{\"u}tersloh}, isbn = {3892049130}, pages = {85 -- 102}, language = {de} } @article{BoerschSupanWeiss, author = {B{\"o}rsch-Supan, Axel and Weiss, Matthias}, title = {Erfahrungswissen in der Arbeitswelt}, series = {Potenziale im Altern. Chancen und Aufgaben f{\"u}r Individuum und Gesellschaft}, journal = {Potenziale im Altern. Chancen und Aufgaben f{\"u}r Individuum und Gesellschaft}, editor = {Kruse, Andreas}, publisher = {AKA}, address = {Heidelberg}, pages = {221 -- 234}, language = {de} } @article{Weiss, author = {Weiss, Matthias}, title = {Absenteeism in Age-Diverse Work Teams}, series = {Labour Markets and Demographic Change}, journal = {Labour Markets and Demographic Change}, editor = {Kuhn, Michael and Ochsen, Carsten}, publisher = {VS Verlag}, address = {Wiesbaden}, doi = {10.1007/978-3-531-91478-7_3}, pages = {40 -- 57}, abstract = {Age-diverse work teams are being advocated as an important management tool to enhance performance and productively employ older workers. However, this advice is not founded on empirical evidence. There are very few studies that look at the relation between performance and age diversity of work teams. This lack of evidence is mainly due to a lack of available data. Information on performance and worker composition of a productive unit is available almost exclusively on the plant level in matched employer-employee data sets. But on the plant level/age heterogeneity of the workforce does not tell much about age diversity on the level where co-operation/teamwork takes place (work teams, departments, etc.). If all of the older workers work in the administration whereas all the young employees work in the production, the firm's workforce may be highly age-diverse, but work teams and departments are age-homogeneous. This problem notwithstanding, Grund and Westerg{\aa}rd-Nielsen (2005) look at the relation between productivity and the standard deviation of workers' age in a sample of 7,000 Danish firms. They find a hump-shaped relation.}, language = {en} } @article{Weiss, author = {Weiss, Matthias}, title = {Erfahrung kompensiert nachlassende F{\"a}higkeiten}, series = {Personalf{\"u}hrung}, journal = {Personalf{\"u}hrung}, number = {1}, pages = {56 -- 58}, language = {de} } @article{SternerBauer, author = {Sterner, Michael and Bauer, Franz}, title = {Power-to-X im Kontext der Energiewende und des Klimaschutzes in Deutschland}, series = {Chemie-Ingenieur-Technik}, volume = {92}, journal = {Chemie-Ingenieur-Technik}, number = {1-2}, publisher = {Wiley}, issn = {0009-286X}, doi = {10.1002/cite.201900167}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:898-opus4-11669}, pages = {85 -- 90}, abstract = {Um den Einfluss verschiedener Power-to-X-Verfahren auf die Transformation des deutschen Energiesystems und das Erreichen der Klimaschutzziele zu {\"u}berpr{\"u}fen, wurde ein sektor{\"u}bergreifendes Energiesystemmodel entwickelt. Die daraus gewonnenen Ergebnisse zeigen: F{\"u}r eine erfolgreiche Energiewende ist der Einsatz von Power-to-X in Zukunft unverzichtbar. Vor allem in Bereichen und Sektoren, in denen hohe Energiedichten erforderlich und nur wenig andere Optionen zur Defossilisierung vorhanden sind, werden Power-to-X-Technologien zwingend notwendig.}, subject = {Power-to-Gas}, language = {de} } @article{SchubertHoefflingerSchroederetal., author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Schr{\"o}der, D. and Zingg, Ren{\´e} P.}, title = {1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials}, series = {Microelectronic Engineering}, volume = {15}, journal = {Microelectronic Engineering}, number = {1-4}, doi = {10.1016/0167-9317(91)90221-X}, pages = {237 -- 240}, abstract = {Distinct electron and hole quasi-Fermi potentials, {\o}f,n and {\o}f,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of {\o}f,n, {\o}f,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of {\o}f,p(t) depends on the device history and generation/recombination rates.}, language = {en} } @inproceedings{Schubert, author = {Schubert, Martin J. W.}, title = {Mixed Analog-Digital Signal Modeling Using Event-Driven VHDL}, series = {X Brazilian Symposium on Integrated Circuit Design (SBCCI'97), August 25-27 1997, Porto Alegre, Brazil}, booktitle = {X Brazilian Symposium on Integrated Circuit Design (SBCCI'97), August 25-27 1997, Porto Alegre, Brazil}, pages = {77 -- 86}, abstract = {A method for solving networks containing generic analog components such as resistors, capacitors and inductors onan event driven time axis using digital VHDL is presented. The components are modeled as complex state machines communicating with their neighbors using INOUT type ports. The method takes advantage of simulation deltas to iterate without simulation-time consumption. A limited range of implicit equations can be solved this way.}, language = {en} } @article{Schubert, author = {Schubert, Martin J. W.}, title = {70V-to-5V Differential CMOS Input Interface}, series = {IEE Electronic Letters}, volume = {30}, journal = {IEE Electronic Letters}, number = {4}, doi = {10.1049/el:19940235}, pages = {296 -- 297}, language = {en} } @inproceedings{DeclerqSchubertClement, author = {Declerq, Michel and Schubert, Martin J. W. and Cl{\´e}ment, F.}, title = {5V-to-75V CMOS Output Interfaces}, series = {Proceedings of the1993 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 24-26 1993, San Francisco, CA, USA}, booktitle = {Proceedings of the1993 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 24-26 1993, San Francisco, CA, USA}, doi = {10.1109/ISSCC.1993.280014}, pages = {162 -- 163}, abstract = {A family of CMOS low- to high-voltage output interface circuits based on a standard, unmodified low-voltage CMOS technology is described. Using only thin-oxide high-voltage (HV) devices with reduced V/sub GS/ (gate-to-source voltage) swing, it makes use of level-shift techniques to meet the constraints on the gate control signals. These static circuits permit the full output voltage swing of V/sub DDH/, while keeping the V/sub GS/ swing of the output devices within the safety limits, including during HV supply transients. Using a standard 2- mu m n-well CMOS technology, reliable, reproducible V/sub DS/ breakdown voltages as high as 120 V and 80 V have been obtained for HV-nMOS and HV-pMOS devices, respectively.< >}, language = {en} } @article{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {An Analytical Model for Strongly Inverted and Accumulated Silicon Films}, series = {Solid-State Electronics}, volume = {33}, journal = {Solid-State Electronics}, number = {12}, publisher = {Elsevier}, doi = {10.1016/0038-1101(90)90136-3}, pages = {1553 -- 1567}, abstract = {An analytical model for the spatial distribution of potential, electric field and carrier densities is presented, assuming uniform doping density and constant quasi-Fermi potentials in the direction of modeling. Starting from the current relations a differential equation respecting two-dimensional effects is developed and solved approximately by decomposition in three regions with different preconditions: (a) flatband region, (b) constant spacecharge density and (c) strong inversion or accumulation. Inaccuracies arise mainly from violated preconditions at the interfaces between the different regions. Two-dimensional effects are respected in the analytical model of (b) only but they influence region (c) by means of boundary conditions at the interface of (b) and (c). The investigations of this paper are focused to region (c). This part of our model is identical to the model of Hauser and Littlejohn[1]. They integrated a simplified form of the semiconductor-Poisson equation twice but were restricted to one-dimensional applications and thermal equilibrium. Our derivation allows for large electric fields and current densities perpendicular to the direction of modeling. From analytical considerations confirmed by numerical experiments we suggest preference to the gradual channel condition, with x and y defined according to Fig. 1. This definition allows the potentials to vary significantly with respect to y. We found that this holds for the quasi-Fermi potentials also. Furthermore an empirical model for the maximum width of strong-inversion layers in uniformly doped silicon films is presented in eqn (46).}, language = {en} } @inproceedings{Schubert, author = {Schubert, Martin J. W.}, title = {Mixed Signal Modeling in VHDL by Distributed Local Iteration}, series = {VHDL Form, Toledo, Spain, April 20-24, 1997}, booktitle = {VHDL Form, Toledo, Spain, April 20-24, 1997}, language = {en} }