@inproceedings{ŁawrowskiHausladenSchreiner, author = {Ławrowski, Robert Damian and Hausladen, Matthias and Schreiner, Rupert}, title = {Individually Addressable Fully Integrated Field Emission Electron Source Fabricated by Laser Micromachining of Silicon}, series = {33rd International Vacuum Nanoelectronics Conference (IVNC): 6-10 July 2020, Lyon}, booktitle = {33rd International Vacuum Nanoelectronics Conference (IVNC): 6-10 July 2020, Lyon}, publisher = {IEEE}, isbn = {978-1-7281-9454-7}, doi = {10.1109/IVNC49440.2020.9203470}, pages = {1 -- 2}, abstract = {A cathode with individually addressable Si tips allows the observation of the activation procedure and emission behaviour of each field emission emitter at any time of the measurement. The cathode consists of an array of 2x2 conically shaped emitter structures, which were fabricated by laser micromachining and wet etching of a Si substrate bonded on a glass carrier. Using the same process, a Si extractions grid was fabricated and mounted onto the emitter. Integral field emission measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10- 9 mbar. The emitters show an onset voltage between 200 V and 300 V. The emission current for each emitter on the cathode was regulated to a given value (1.0 μA, 2.5μA, 5.0μA) by an external regulating circuit and was recorded individually during the measurement. With such approach, the relation between the emission behaviour and the geometry of emitters can be studied in detail. In addition, the current stabilization of each emitters of an array can be investigated, which led to a current stability of better than 0.5\%.}, language = {en} } @misc{DuesbergBachmannEdleretal., author = {D{\"u}sberg, Felix and Bachmann, Michael and Edler, Simon and Pahlke, Andreas and Langer, Christoph and Prommesberger, Christian and Schreiner, Rupert and Bunert, Erik and Wendt, Cornelius and Zimmermann, Stefan}, title = {Novel Non-Radiative Electron Source}, series = {43rd International Symposium of Capillary Chromatography \& 16h GC x GC Symposium 2019}, journal = {43rd International Symposium of Capillary Chromatography \& 16h GC x GC Symposium 2019}, abstract = {Recently a non-radioactive electron capture detector based on a thermionic electron emitter has been demonstrated [1]. Using field emitter arrays (FEAs) would yield non-radioactive portable low power devices with fast switching capability. By combining FEAs with a vacuum-sealed housing and an electron transparent membrane window, such electron sources can be operated in an ambient pressure environment.}, language = {en} } @article{LangerPrommesbergerŁawrowskietal., author = {Langer, Christoph and Prommesberger, Christian and Ławrowski, Robert Damian and Schreiner, Rupert and Serbun, Pavel and M{\"u}ller, G{\"u}nter and D{\"u}sberg, Felix and Hofmann, Martin and Bachmann, Michael and Pahlke, Andreas}, title = {Field emission properties of p-type black silicon on pillar structures}, series = {Journal of Vacuum Science \& Technology B}, volume = {34}, journal = {Journal of Vacuum Science \& Technology B}, number = {2}, doi = {10.1116/1.4943919}, abstract = {Arrays of black silicon field emission pillar structures were fabricated on p-type silicon substrates. Two types of samples with the same number of pillars (arrays of 10 × 10) but different pillar heights (8 and 20 μm) were prepared as well as a black silicon reference sample without pillars. The field emission properties of these cathodes were investigated both by means of integral current-voltage measurements and by field emission scanning microscopy. Samples with a pillar height of 20 μm revealed onset fields as low as 6.4 V/μm, field enhancement factors up to 800, and emission currents up to 8 μA at an applied field of 20 V/μm. Due to the p-type material, a saturation of the emission current for fields above 11 V/μm was observed. This saturation leads to a stable operation with a current fluctuation of less than ±8\%. It was found that samples with a pillar height of 20 μm showed improved emission characteristics compared to samples with a pillar height of 8 μm or without pillars. The voltage maps revealed an increased emission homogeneity after a "burn-in" sequence of the sample. The current map showed that a few of the pillars dominate the emission. Integral current stability measurements were performed under different vacuum pressures, in order to investigate altered emission behavior and a potential degradation of the emitters. At pressures above 10-6 mbar, the sample starts to degrade irreversibly. Nevertheless, even after a harsh treatment over 30 min at 5 × 10-5 mbar and at an applied field of 23 V/μm, the cathode was still operating, and did not fail during further operation over 20 h at 5 × 10-8 mbar and at an applied field of 28 V/μm.}, language = {en} } @article{MingelsPorshynPrommesbergeretal., author = {Mingels, Stephan and Porshyn, Vitali and Prommesberger, Christian and Langer, Christoph and Schreiner, Rupert and L{\"u}tzenkirchen-Hecht, Dirk and M{\"u}ller, G{\"u}nter}, title = {Photosensitivity of p-type black Si field emitter arrays}, series = {Journal of Applied Physics}, volume = {119}, journal = {Journal of Applied Physics}, number = {16}, doi = {10.1063/1.4948328}, abstract = {We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1\% at 0.4 μA and 0.7\% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitive voltage drop across the emitters as well as hints for hot electron emission.}, language = {en} } @article{BachmannDamsDuesbergetal., author = {Bachmann, Michael and Dams, Florian and D{\"u}sberg, Felix and Hofmann, Martin and Pahlke, Andreas and Langer, Christoph and Ławrowski, Robert Damian and Prommesberger, Christian and Schreiner, Rupert and Serbun, Pavel and L{\"u}tzenkirchen-Hecht, Dirk and M{\"u}ller, G{\"u}nter}, title = {Extraction of the characteristics of current-limiting elements from field emission measurement data}, series = {Journal of Vacuum Science \& Technology B}, volume = {35}, journal = {Journal of Vacuum Science \& Technology B}, number = {2}, doi = {10.1116/1.4971768}, abstract = {In this contribution, the authors will present an algorithm to extract the characteristics of nonideal field emission circuit elements from saturation-limited field emission measurement data. The method for calculating the voltage drop on current-limiting circuit elements is based on circuit theory as well as Newton's method. Since the only assumption the authors make on the current-limiting circuit is a connection in series, this method is applicable to most field emission data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters as well as the parameter correlations are fully taken into account throughout the algorithm. N-type silicon samples with varying external serial resistors are analyzed. All results show a good agreement to the nominal resistor values. Additionally, several p-type samples are analyzed, showing a diodelike behavior. The extracted current-limiting characteristics of the p-type samples are in good agreement with a pn-junction model. The stability of the emission current of the p-type samples is measured by constant voltage measurements and compared to the extracted current-limiting characteristics. The application of the algorithm to measurement data shows that the given algorithm is a valuable tool to analyze field emission measurement data influenced by nonemissive processes.}, language = {en} } @article{PrommesbergerBachmannDuesbergetal., author = {Prommesberger, Christian and Bachmann, Michael and D{\"u}sberg, Felix and Langer, Christoph and Ławrowski, Robert Damian and Hofmann, Martin and Pahlke, Andreas and Schreiner, Rupert}, title = {Regulation of the Transmitted Electron Flux in a Field-Emission Electron Source Demonstrated on Si Nanowhisker Cathodes}, series = {IEEE Transactions on Electron Devices}, volume = {64}, journal = {IEEE Transactions on Electron Devices}, number = {12}, publisher = {IEEE}, issn = {5128-5133}, doi = {10.1109/TED.2017.2763239}, abstract = {We report on a method to stabilize the transmitted electron flux in a field-emission electron source using an external regulation circuit. The electron source was realized with an array of silicon (Si) nanowhiskers on the top of elongated pillar structures, a mica spacer, and an extraction grid made of Si. As for most applications, the emitted electron current from the cathode is not as crucial as the transmitted electron flux through the extraction grid toward the anode. We investigated a method which allows the regulation directly by the emitted electron flux and not merely on the cathode current. By using this method, we were able to stabilize the emitted electron flux of our electron source down to values below 1\%. Simultaneously, it was shown that there is the possibility to stabilize the influencing value in the real application as well. The effectiveness of this method was demonstrated successfully with an X-ray source setup. The measured X-ray photon count rate was stabilized to a standard deviation of 0.30\% at a pressure of 1 × 10 -7 mbar. Even in harsh environment of 2 × 10 -5 mbar, a stabilization of the X-ray photon count rate down to a value of 0.63\% was achieved.}, language = {en} } @inproceedings{LindnerBerndtJungbaueretal., author = {Lindner, Matthias and Berndt, Dominik and Jungbauer, Bastian and Ehrlich, Ingo and Schreiner, Rupert and Pipa, Andrei V. and Hink, R{\"u}diger and Foest, R{\"u}diger and Brandenburg, Ronny and Max, Alexander and Caspari, Ralf}, title = {Fabrication, surface integration and testing of miniaturized dielectric barrier discharge plasma actuators for active flow control applications}, series = {AIAA Aviation 2019 Forum, 17-21 June 2019, Dallas, Texas}, booktitle = {AIAA Aviation 2019 Forum, 17-21 June 2019, Dallas, Texas}, doi = {10.2514/6.2019-2998}, language = {en} } @inproceedings{LindnerBerndtTschurtschenthaletal., author = {Lindner, Matthias and Berndt, Dominik and Tschurtschenthal, Karl and Ehrlich, Ingo and Jungbauer, Bastian and Schreiner, Rupert and Pipa, Andrei V. and Hink, R{\"u}diger and Foest, R{\"u}diger and Brandenburg, Ronny and Neuwirth, Daniel and Karpen, Norbert and Bonaccurso, Elmar and Weichwald, Robert and Max, Alexander and Caspari, Ralf}, title = {Aircraft Icing Mitigation by DBD-based Micro Plasma Actuators}, series = {AIAA AVIATION 2020 FORUM: June 15-19, 2020}, booktitle = {AIAA AVIATION 2020 FORUM: June 15-19, 2020}, doi = {10.2514/6.2020-3243}, abstract = {We present the application of plasma actuators as a technology for ice prevention at airfoils. The miniaturized dielectric barrier discharge (DBD) plasma actuators (PA) were fabricated by means of microelectromechanical systems (MEMS). We elucidate how to make the actuator samples scalable and applicable to any desired shape by the use of flexible inorganic zirconia substrates. For this purpose, we applied our developed embedding method to integrate the micro actuators in modern carbon/glass fiber reinforced polymer (CFRP/GFRP) materials. Next, the embedded actuator samples were mounted on a mechanical air profile-like fixture and placed in the icing wind tunnel iCORE. The samples were tested in rime ice conditions at temperatures of -15 to -20° C and air speeds up to 30 m/s. Unlike other groups we used a thin film zirconia substrate as dielectric for the plasma actuator. Due to the low substrate thickness of just 150 µm, an operating voltage of 2 kVRMS is already sufficient enough for a stable plasma formation. The experiments show that the operated actuator was able to prevent the ice formation and first indications of a De-icing function were also found. Hence, we show that it is feasible to realize an anti-icing system with zirconia-based plasma actuators operated at lower voltages compared to conventional ones.}, language = {en} } @article{HerrmannBuettner, author = {Herrmann, Frank and B{\"u}ttner, Simon}, title = {Automatische Qualit{\"a}tskontrolle mittels Maschinellem Lernen und SAP Leonardo}, series = {Anwendungen und Konzepte der Wirtschaftsinformatik}, journal = {Anwendungen und Konzepte der Wirtschaftsinformatik}, number = {10}, publisher = {AKWI}, issn = {2296-4592}, pages = {46 -- 53}, abstract = {In vielen Unternehmen werden von Menschen durch Ansehen von Produkten Produktionsfehler identifiziert. Die {\"u}bersehenen Produktionsfehler f{\"u}hren zunehmend h{\"a}ufiger zu teuren Kundenreklamationen. F{\"u}r die Produktion von Fußb{\"a}llen wird in dieser Arbeit diese manuelle Qualit{\"a}tssicherung analysiert. Als Alternative werden die Fußb{\"a}lle durch einen Roboter fotografiert u nd durch maschinelles Lernen werden Produktionsfehler auf diesen digitalen Fotos identifiziert. Dieser Pr{\"u}fprozess wird in SAP Leonardo implementiert und damit wird der bereits in einem SAP System implementierte Produktionsprozess (bzw. Unternehmensprozess) erweitert, wodurch ein durchg{\"a}ngig digitalisierter Gesamtprozess implementiert wird. Dadurch werden signifikant bessere Pr{\"u}fergebnisse erreichtb und die Durchlaufzeit des Pr{\"u}fprozesses wird substantiell reduziert.}, language = {de} } @article{PrommesbergerLangerŁawrowskietal., author = {Prommesberger, Christian and Langer, Christoph and Ławrowski, Robert Damian and Schreiner, Rupert}, title = {Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behavior}, series = {Journal of Vacuum Science \& Technology B}, volume = {35}, journal = {Journal of Vacuum Science \& Technology B}, number = {1}, doi = {10.1116/1.4972519}, abstract = {The authors report on the fabrication and characterization of p-type Si tip arrays with an integrated gate electrode for applications as field emission electron sources. After the reactive ion etching of the emitters, the combined thermal dry and wet oxidation was used for both the sharpening of the emitters and for the realization of an enhanced insulation layer. Au was evaporated in a self-aligned process as gate electrode. Arrays of 16 Si tips were fabricated with tip heights of about 3 μm and tip radii of about 20 nm with integrated gate electrode concentrically positioned ≈2 μm below the tip apex. Integral measurements with an additional anode showed improved field emission properties with a reproducible and stable emission behavior. A fast activation of the tips, low onset voltages of about 30 V, and moderate field emission currents up to 0.55 μA were noticed. The field emission parameters were calculated using the Fowler-Nordheim characteristics. A pronounced saturation regime was observed, and current fluctuations of less than ±1\% were investigated for 30 min. Long-term measurements were carried out for a period of more than 8 h. In the first 6 h of operation, the authors observed a drift of the emission current from 0.35 to 0.55 μA caused by an increased emission surface.}, language = {en} } @article{BreuerBachmannDuesbergetal., author = {Breuer, Janis and Bachmann, Michael and D{\"u}sberg, Felix and Pahlke, Andreas and Edler, Simon and Langer, Christoph and Prommesberger, Christian and Ławrowski, Robert Damian and Schreiner, Rupert and Serbun, Pavel and L{\"u}tzenkirchen-Hecht, Dirk}, title = {Extraction of the current distribution out of saturated integral measurement data of p-type silicon field emitter arrays}, series = {Journal of Vacuum Science and Technology B}, volume = {36}, journal = {Journal of Vacuum Science and Technology B}, number = {5}, publisher = {AIP Publishing}, doi = {10.1116/1.5035189}, abstract = {At the moment, only complicated techniques are known for the determination of array properties of field emitter arrays such as the number of active tips, the current distribution, or the individual tip radii. In this work, a method for extracting these parameters from integral measurement data is presented. A model describing the characteristics of a single emitter, including the saturation as a function of the applied voltage and the emitter radius, is developed. It is shown that experimental data of field emitter arrays can be represented as the sum of these functions and the characteristic parameters can be fitted to field emission data of an array. Using this method, the values of the radii as well as the parameters of distribution models can be determined directly. Analysis of experimental data from p-type Si emitter arrays shows that only 1-2\% of the tips contribute significantly.}, language = {en} }