@inproceedings{HerdlKueddelsmannSchelsetal., author = {Herdl, Florian and Kueddelsmann, Maximillian J. and Schels, Andreas and Bachmann, Michael and Edler, Simon and Wohlfartsst{\"a}tter, Dominik and D{\"u}sberg, Felix and Prugger, Alexander and Dillig, Michael and Dams, Florian and Schreiner, Rupert and Coile{\´a}in, Cormac {\´O}. and Zimmermann, Stefan and Pahlke, Andreas and Duesberg, Georg S.}, title = {Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188974}, pages = {14 -- 16}, abstract = {In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.}, language = {en} }