TY  - CONF
A1  - Serbun, Pavel
A1  - Porshyn, Vitali
A1  - Müller, Günter
A1  - Lützenkirchen-Hecht, Dirk
A1  - Prommesberger, Christian
A1  - Langer, Christoph
A1  - Ławrowski, Robert Damian
A1  - Schreiner, Rupert
T1  - Field emission behavior of single n- and p-type black Si pillar structures
T2  - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan
N2  - We have investigated the properties of single n- and p-type black silicon (b-Si) pillars with a height of 20 μ m under strong electric field and halogen lamp or laser illumination. For both type of b-Si pillar structures, I-V measurements revealed strong activation effects, which consisted in sudden current increases during the first up/down voltage sweeps. The maximum reproducible emission current from a single n-type b-Si pillar structure was about 15 μ A. A pronounced saturation region at 240 nA was observed for a single p-type b-Si pillar. The current fluctuation over time showed a standard deviation of 28% and 2.5% for n- and p-type single b-Si pillar structures, respectively. Optical switching under halogen lamp illumination resulted in at least 3 times higher saturation currents and showed a linear dependence of the FE current on the laser power.
KW  - field emission
KW  - black silicon
KW  - photoemission
Y1  - 2021
UR  - https://opus4.kobv.de/opus4-oth-regensburg/frontdoor/index/index/docId/1071
PB  - IEEE
ER  -