TY - CONF A1 - Navitski, Aliaksandr A1 - Serbun, Pavel A1 - Müller, Güntner A1 - Schreiner, Rupert A1 - Dams, Florian T1 - Efficient and reliable field emission from silicon tip arrays for miniaturized electron sources T2 - 2011 24th International Vacuum Nanoelectronics Conference ; 18-22 July 2011 Wuppertal N2 - Silicon-based cathodes with precisely aligned field emitter arrays (FEA) applicable for miniaturized electron sources were successfully developed and fabricated. The cathode chips contain about 3×105 Si tips/cm2 in a triangular array with a tip height of 2.5 μm, tip radius of 20 nm, and lateral distance between tips of 20 μm. Amazingly homogeneous and well-aligned field emission (FE) from all tips (i.e. 100% efficiency) and maximum stable currents of typically 0.1 μA for p- and 0.6 μA for n-type Si were reproducibly achieved. Current-voltage characteristics of p-type Si tips exhibit the expected saturation at around 10 nA due to limited supply of electrons from a depletion layer, while the n-type Si tips show the usual FN behaviour. Additional coating of the Si tips with a 10 nm Au layer resulted in at least 5 times higher average FE current levels i.e. typically 3 μA but lead, however, to a 30% increase of the onset voltage. KW - cathodes KW - coatings KW - elemental semiconductors KW - field emission KW - field emitter arrays KW - miniaturized electron sources KW - silicon tips KW - structured cold cathode Y1 - 2011 UR - https://opus4.kobv.de/opus4-oth-regensburg/frontdoor/index/index/docId/5397 UR - https://ieeexplore.ieee.org/document/6004567?arnumber=6004567 SN - 978-3-00-035081-8 SN - 978-1-4577-1243-2 SN - 2380-6311 SN - 2164-2370 SP - 71 EP - 72 PB - IEEE CY - Piscataway, NJ ER -