TY - CONF A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Huang, Yifeng A1 - She, Juncong T1 - Gated p-Si field emission cathode applied in an ionization vacuum gauge T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - A commercial Bayard-Alpert ionization vacuum gauge was equipped with a field emission electron source based on a cathode consisting of an array of 16 gated, p-doped, and DLC-coated Si-tips and characterized. An anode current of about 1.3 μA led to an ion current of 7 fA at 3×10 -7 mbar and 0.8 pA at 4×10 -5 mbar. Whereas at pressures higher than 4×10 -5 mbar the emission current of the electron source decreased, the ratio of ion and anode current remained linear. A nearly constant sensitivity of ~ 17 mbar -1 of the ionization vacuum gauge within the investigated pressure range was depicted. KW - field emission KW - field emitter array KW - Si KW - DLC KW - electron source KW - ionization vacuum gauge Y1 - 2021 UR - https://opus4.kobv.de/opus4-oth-regensburg/frontdoor/index/index/docId/1137 SN - 2380-6311 SP - 145 EP - 146 PB - IEEE ER -