TY - JOUR A1 - Schubert, Martin J. W. A1 - Höfflinger, Bernd A1 - Zingg, René P. T1 - A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET T2 - IEEE Electron Device Letters N2 - A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< > Y1 - 2021 UR - https://opus4.kobv.de/opus4-oth-regensburg/frontdoor/index/index/docId/1165 VL - 12 IS - 9 SP - 489 EP - 491 ER -