TY - CONF A1 - Schubert, Martin J. W. A1 - Höfflinger, Bernd A1 - Zingg, René P. T1 - A New Analytical Charge Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET T2 - Superlattices and Microstructures N2 - An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model. Y1 - 2021 UR - https://opus4.kobv.de/opus4-oth-regensburg/frontdoor/index/index/docId/1164 VL - 7 IS - 4 SP - 323 EP - 326 PB - Elsevier ER -