3D computation of oxygen transport in Czochralski crystal growth of silicon considering evaporation

  • For Czochralski (Cz) growth of silicon single crystals, 3D unsteady simulations of the oxygen transport in the turbulent melt flow were conducted using a new formulation for the evaporation at the free surface found by Sakai et al. [Electrochem. Solid-State Lett. 5 (8) (2002) G72]. Compared with 2D results from literature, the computed oxygen concentration now fits the experimental data better, showing lower values in the critical region beneath the crystal than in previous simulations, which mostly arises from the more accurate prediction of the flow field. Further computations of Cz configurations show how the oxygen distribution can be influenced by rotation of the crucible and crystal.

Export metadata

Additional Services

Search Google Scholar
Metadaten
Author:A. Raufeisen, S. Jana, Michael BreuerORCiD, T. Botsch, F. Durst
DOI:https://doi.org/10.1016/j.jcrysgro.2006.11.349
ISSN:0022-0248
Parent Title (English):Journal of Crystal Growth
Publisher:Elsevier BV
Document Type:Article
Language:English
Date of first Publication:2007/02/02
Reviewed:Begutachtet/Reviewed
Release Date:2024/07/08
Volume:303
Issue:1
Pagenumber:4
First Page:146
Last Page:149
institutes:Fakultät Verfahrenstechnik
Research Themes:Materialien & Produktionstechnik
Verstanden ✔
Diese Webseite verwendet technisch erforderliche Session-Cookies. Durch die weitere Nutzung der Webseite stimmen Sie diesem zu. Unsere Datenschutzerklärung finden Sie hier.