C-SE18 Models for heat and charge-carrier flow in organic electronics
We discuss drift-diffusion models for charge-carrier transport in organic semiconductor de- vices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The for- mer leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlin- ear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauder’s fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.
This paper deals with the analysis of an instationary drift-diffusion model for organic semicon- ductor devices including Gauss–Fermi statistics and application-specific mobility functions. The charge transport in organic materials is realized by hopping of carriers between adjacent ener- getic sites and is described by complicated mobility laws with a strong nonlinear dependence on temperature, carrier densities and the electric field strength.
To prove the existence of global weak solutions, we consider a problem with (for small den- sities) regularized state equations on any arbitrarily chosen finite time interval. We ensure its solvability by time discretization and passage to the time-continuous limit. Positive lower a priori estimates for the densities of its solutions that are independent of the regularization level en- sure the existence of solutions to the original problem. Furthermore, we derive for these solutions global positive lower and upper bounds strictly below the density of transport states for the densi- ties. The estimates rely on Moser iteration techniques.