82D37 Semiconductors
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- Gradient flow (1)
- Indium-Arsenide-Antimonide (1)
- Optoelectronic devices (1)
- Stokes shift (1)
- absorption measurements (1)
- doping optimization (1)
- drift diffusion (1)
- dual dissipation potential (1)
- kp simulations (1)
- light emitting devices (1)
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- D (3)
We derive an optoelectronic model based on a gradient formulation for the relaxation of electron-, hole- and photon-densities to their equilibrium state. This leads to a coupled system of partial and ordinary differential equations, for which we discuss the isothermal and the non-isothermal scenario separately.
We discuss analytical and numerical methods for the optimization of optoelectronic devices by performing optimal control of the PDE governing the carrier transport with respect to the doping profile. First, we provide a cost functional that is a sum of a regularization and a contribution, which is motivated by the modal net gain that appears in optoelectronic models of bulk or quantum- well lasers. Then, we state a numerical discretization, for which we study optimized solutions for different regularizations and for vanishing weights.
Electronic structure and optoelectronic properties of strained InAsSb/GaSb multi quantum-wells
(2008)
A study of the optical properties of a set of InAsxSb1-x/Al0.15In0.85As0.77Sb0.23/GaSb multiple quantum-wells (for x between 0.82 and 0.92) with build-in strains in the -0.62% to +0.05%-range is presented. The energy of the lowest quantum-confined optical transition is calculated by kp perturbation theory and experimentally determined by absorption measurements. Stokes shift of photoluminescence, photocurrent and of the emission from light emitting devices against the absorption edge of the quantum-well are quantified. The impact of the decreasing carrier confinement in the InAsxSb1-x quantum well system with increasing mole fraction is analyzed theoretically, and experimentally demonstrated by photoluminescence measurement. Our results allow for the improvement of optoelectronic devices, in particular for tailoring emission spectra of light emitting diodes.