78A60 Lasers, masers, optical bistability, nonlinear optics [See also 81V80]
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- English (6)
Keywords
- Indium-Arsenide-Antimonide (1)
- Lang-Kobayashi model (1)
- Optoelectronic devices (1)
- Stokes shift (1)
- Traveling wave model (1)
- absorption measurements (1)
- alternate oscillations (1)
- analysis (1)
- bistability (1)
- cavity modes (1)
Application Area
- D (6)
We study both theoretically and experimentally typical operation
regimes of 40 GHz monolithic mode-locked lasers. The underlying Traveling Wave Equation model reveals quantitative agreement for characteristics of the fundamental mode-locking as pulse width and repetition frequency tuning, as well as qualitative agreement with the experiments for other dynamic regimes. Especially the appearance of stable harmonic mode-locking at 80 GHz
has been predicted theoretically and confirmed by measurements.
Furthermore, we derive and apply a simplified Delay-Differential-Equation model
which guides us to a qualitative analysis of bifurcations responsible for the appearance
and the breakup of different mode-locking regimes. Higher harmonics of mode-locking are predicted by this model as well.
We explore the concept of passive-feedback lasers for direct signal
modulation at 40 Gbit/s. Based on numerical simulation and bifurcation
analysis, we explain the main mechanisms in these devices which are
crucial for modulation at high speed. The predicted effects are
demonstrated experimentally by means of correspondingly designed
devices. In particular a significant improvement of the modulation
bandwidth at low injection currents can be demonstrated.
We investigate a semiconductor laser with delayed optical feedback due
to an external cavity formed by a regular mirror. We discuss
similarities and differences of the well-known Lang-Kobayashi delay
differential equation model and the traveling wave partial
differential equation model. For comparison we locate the continuous
wave states in both models and analyze their stability.
We use the traveling wave model for simulating and analyzing
nonlinear dynamics of complex semiconductor ring laser devices.
This modeling allows to consider temporal-spatial distributions
of the coun\-ter-pro\-pa\-ga\-ting slowly varying optical fields
and the carriers, what can be important when studying
non-homogeneous ring cavities, propagation of short pulses or fast switching.
By performing numerical integration of the model
equations we observe several dynamic regimes as well as transitions
between them. The computation of ring cavity modes explains some
peculiarities of these regimes.
Electronic structure and optoelectronic properties of strained InAsSb/GaSb multi quantum-wells
(2008)
A study of the optical properties of a set of InAsxSb1-x/Al0.15In0.85As0.77Sb0.23/GaSb multiple quantum-wells (for x between 0.82 and 0.92) with build-in strains in the -0.62% to +0.05%-range is presented. The energy of the lowest quantum-confined optical transition is calculated by kp perturbation theory and experimentally determined by absorption measurements. Stokes shift of photoluminescence, photocurrent and of the emission from light emitting devices against the absorption edge of the quantum-well are quantified. The impact of the decreasing carrier confinement in the InAsxSb1-x quantum well system with increasing mole fraction is analyzed theoretically, and experimentally demonstrated by photoluminescence measurement. Our results allow for the improvement of optoelectronic devices, in particular for tailoring emission spectra of light emitting diodes.