65N08 Finite volume methods
We discuss drift-diffusion models for charge-carrier transport in organic semiconductor de- vices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The for- mer leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlin- ear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauder’s fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.
In incompressible flows with vanishing
normal velocities at the boundary, irrotational forces in the momentum
equations should be balanced
completely by the pressure gradient.
Unfortunately, nearly all available discretization methods for incompressible flows violate this property.
The origin of the problem is that discrete velocity approximations
of incompressible flows are usually not
divergence-free. Hence, the use of divergence-free velocity reconstructions is
proposed wherever an $L^2$ scalar product appears in the discrete
variational formulation.
The approach is illustrated and applied to a nonconforming MAC-like discretization for unstructured Delaunay grids.
It is numerically demonstrated that a divergence-free velocity reconstruction based on the lowest-order Raviart-Thomas element
increases the robustness and accuracy of an existing convergent discretization, when irrotational forces appear in the momentum equations.