35Q30 Navier-Stokes equations [See also 76D05, 76D07, 76N10]
Grad-div stabilization has been proved to be a very useful tool in discretizations
of incompressible flow problems. Standard error analysis for inf-sup stable conforming pairs of
finite element spaces predicts that the stabilization parameter should be optimally chosen
to be $\mathcal O(1)$. This paper revisits this choice for the Stokes equations on the basis
of minimizing the $H^1(\Omega)$ error of the velocity and the $L^2(\Omega)$ error of the pressure.
It turns out, by applying a refined error analysis, that the optimal parameter choice is more subtle
than known so far in the literature. It depends on the used norm,
the solution, the family of finite
element spaces, and the type of mesh. Depending on the situation, the
optimal
stabilization parameter might range from being very small to very large.
The analytic results
are supported by numerical examples.
Recent research has shown that
in some practically relevant situations like multi-physics flows[11]
divergence-free mixed finite elements may have a significantly
smaller discretization error than standard non-divergence-free
mixed finite elements. In order to judge the overall performance of
divergence-free mixed finite elements, we
investigate linear solvers for the saddle point linear systems arising in $((P_k)^d,P_{k-1}^{disc})$ Scott-Vogelius finite element implementations of the incompressible Navier-Stokes equations. We investigate both direct and iterative solver methods.
Due to discontinuous pressure elements in the case of Scott-Vogelius elements, considerably more solver strategies seem to deliver promising results than in the case of standard mixed finite elements like
Taylor-Hood elements. For direct methods, we extend recent preliminary work using sparse banded solvers on the penalty method formulation to finer meshes, and discuss extensions. For iterative methods, we test augmented Lagrangian and H-LU preconditioners with GMRES, on both full and statically condensed systems.
Several numerical experiments are provided that show these classes of solvers are well suited for use with Scott-Vogelius elements, and could deliver an interesting overall performance in several applications.
Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals
(2012)
This paper deals with the mathematical modeling and simulation of
crystal growth processes by the so-called Czochralski method and related methods,
which are important industrial processes
to grow large
bulk single crystals of semiconductor materials such as, e.g., gallium arsenide
(GaAs) or silicon (Si) from the melt.
In particular, we investigate a recently developed
technology in which traveling magnetic fields are applied in order to
control
the behavior of the turbulent melt flow. Since numerous different physical effects
like electromagnetic fields, turbulent melt flows, high temperatures, heat transfer via
radiation, etc., play an important role in the process, the corresponding mathematical
model leads to an extremely difficult system of initial-boundary value problems for
nonlinearly coupled partial differential equations. In this paper, we describe a mathematical
model that is under use for the simulation of real-life growth scenarios, and we give an overview
of mathematical results and numerical simulations that have been obtained for it in recent years.