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We discuss analytical and numerical methods for the optimization of optoelectronic devices by performing optimal control of the PDE governing the carrier transport with respect to the doping profile. First, we provide a cost functional that is a sum of a regularization and a contribution, which is motivated by the modal net gain that appears in optoelectronic models of bulk or quantum- well lasers. Then, we state a numerical discretization, for which we study optimized solutions for different regularizations and for vanishing weights.
We derive an optoelectronic model based on a gradient formulation for the relaxation of electron-, hole- and photon-densities to their equilibrium state. This leads to a coupled system of partial and ordinary differential equations, for which we discuss the isothermal and the non-isothermal scenario separately.