In this article, we use numerical simulation to investigate transient temperature
phenomena during sublimation growth of SiC single crytals via physical
vapor transport (also called the modified Lely method). We consider the evolution
of temperatures at the SiC source and at the SiC seed crystal, which
are highly relevant to the quality of the grown crystals, but inaccessible to
direct measurements. The simulations are based on a transient mathematical
model for the heat transport, including heat conduction, radiation, and radio
frequency (RF) induction heating. Varying the position of the induction coil
as well as the heating power, it is shown that the measurable temperature difference
between the bottom and the top of the growth apparatus can usually
not be used as a simple indicator for the respective temperature difference
between SiC source and seed. Moreover, it is shown that there can be a time
lack of 1.5 hours between the heating of the temperature measuring points
and the heating of the interior of the SiC source.
Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals
(2012)
This paper deals with the mathematical modeling and simulation of
crystal growth processes by the so-called Czochralski method and related methods,
which are important industrial processes
to grow large
bulk single crystals of semiconductor materials such as, e.g., gallium arsenide
(GaAs) or silicon (Si) from the melt.
In particular, we investigate a recently developed
technology in which traveling magnetic fields are applied in order to
control
the behavior of the turbulent melt flow. Since numerous different physical effects
like electromagnetic fields, turbulent melt flows, high temperatures, heat transfer via
radiation, etc., play an important role in the process, the corresponding mathematical
model leads to an extremely difficult system of initial-boundary value problems for
nonlinearly coupled partial differential equations. In this paper, we describe a mathematical
model that is under use for the simulation of real-life growth scenarios, and we give an overview
of mathematical results and numerical simulations that have been obtained for it in recent years.
A finite volume scheme suitable for nonlinear heat transfer in materials with anisotropic thermal conductivity is formulated, focussing on the difficulties arising from the discretization of complex domains which are typical in the simulation of industrially relevant processes. The discretization is based on unstructured constrained Delaunay triangulations of the domain. For simplicity, it is assumed that the thermal conductivity tensor has vanishing off-diagonal entries and that the anisotropy is independent of the temperature. Numerical simulations verify the accuracy of the method in two test cases where a closed-form solution is available. Further results demonstrate the effectiveness of the method in computing the heat transfer in a complex growth apparatus used in crystal growth.
Using a mathematical heat transfer model including anisotropic heat conduction, radiation, and radio frequency (RF) heating, we perform numerical computations of the temperature field in an axisymmetric growth apparatus during sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). Because it is not unusual for the thermal insulation of a PVT growth apparatus to possess an anisotropic thermal conductivity, we numerically study the influence that this anisotropic thermal conductivity has on the temperature field in the growth chamber. Moreover, we also study the influence of the thickness of the insulation. Our results show that, depending on the insulation's orientation, even a moderate anisotropy in the insulation can result in temperature variations of more than 100 K at the growing crystal's surface, which should be taken into account for the simulation as well as for the design of a PVT growth apparatus.
Optimal control of 3D state-constrained induction heating problems with nonlocal radiation effects
(2009)
The paper is concerned with a class of optimal heating problems in semiconductor single crystal growth processes. To model the heating process, time-harmonic Maxwell equations are considered in the system of the state. Due to the high temperatures characterizing crystal growth, it is necessary to include nonlocal radiation boundary conditions and a temperature-dependent heat conductivity in the description of the heat transfer process. The first goal of this paper is to prove the existence and uniqueness of the solution to the state equation. The regularity analysis associated with the time harmonic Maxwell equations is also studied. In the second part of the paper, the existence and uniqueness of the solution to the corresponding linearized equation is shown. With this result at hand, the differentiability of the control-to-state mapping operator associated with the state equation is derived. Finally, based on the theoretical results, first oder necessary optimality conditi!
ons for an associated optimal control problem are established.