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- carrier and current densities (2)
- Indium-Arsenide-Antimonide (1)
- Optoelectronic devices (1)
- Stokes shift (1)
- a priori estimates (1)
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- characteristic function (1)
- delta perturbation (1)
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- density matrix (1)
- dilation (1)
- dissipative Schroedinger operator (1)
- dissipative Schroedinger-Poisson systems (1)
- dissipative Schroedinger-type operators (1)
- generalized eigenfunctions (1)
- kp simulations (1)
- light emitting devices (1)
- open quantum system (1)
- photoluminescence meassurements (1)
- strained multi quantum-wells (1)
Project
- D4 (5)
Application Area
- D (5)
We study a stationary Schrödinger-Poisson system on a bounded interval of the real axis. The Schrödinger operator is defined on the bounded domain with transparent boundary conditions. This allows us to model a non-zero current through the boundary of the interval. We prove that the system always admits a solution and give explicit a priori estimates for the solutions.
A 1D coupled drift-diffusion dissipative Schroedinger model (hybrid model), which
is capable to describe the transport of electrons and holes in semi-conductor devices
in a non-equilibrium situation, is mathematically analyzed. The device domain is
split into a part where the transport is well-described by the drift-diffusion equations
(classical zone) and a part where a quantum description via a dissipative Schroedinger
system (quantum zone) is used. Both system are coupled such that the continuity
of the current densities is guaranteed. The electrostatic potential is self-consistently
determined by Poisson's equation on the whole device. We show that the hybrid
model is well-posed, prove existence of solutions and show their uniform boundedness
provided the distribution function satisfy a so-called balance condition. The current
densities are different from zero in the non-equilibrium case and uniformly bounded.
We consider a one–dimensional coupled stationary Schrödinger drift–diffusion model for quantum
semiconductor device simulations. The device domain is decomposed into a part with large quantum
effects (quantum zone) and a part where quantum effects are negligible (classical zone). We give
boundary conditions at the classic–quantum interface which are current preserving. Collisions within
the quantum zone are introduced via a Pauli master equation. To illustrate the validity we apply the
model to three resonant tunneling diodes
Non-selfadjoint operators play an important role in the modeling of open quantum systems. We consider a one-dimensional Schroedinger-type operator with dissipative boundary conditions and dissipative delta potentials. An explicit description of the characteristic function, the minimal dilation and the generalized eigenfunctions of the dilation is given. The quantities of carrier and current densities are rigorously defined. Furthermore we will show that the current is not constant and that the variation of the current depend essentially on the chosen density matrix and imaginary parts of the delta potentials. This correspondence can be used to model a recombination-generation rate in the open quantum system.
Electronic structure and optoelectronic properties of strained InAsSb/GaSb multi quantum-wells
(2008)
A study of the optical properties of a set of InAsxSb1-x/Al0.15In0.85As0.77Sb0.23/GaSb multiple quantum-wells (for x between 0.82 and 0.92) with build-in strains in the -0.62% to +0.05%-range is presented. The energy of the lowest quantum-confined optical transition is calculated by kp perturbation theory and experimentally determined by absorption measurements. Stokes shift of photoluminescence, photocurrent and of the emission from light emitting devices against the absorption edge of the quantum-well are quantified. The impact of the decreasing carrier confinement in the InAsxSb1-x quantum well system with increasing mole fraction is analyzed theoretically, and experimentally demonstrated by photoluminescence measurement. Our results allow for the improvement of optoelectronic devices, in particular for tailoring emission spectra of light emitting diodes.