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We discuss drift-diffusion models for charge-carrier transport in organic semiconductor de- vices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The for- mer leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlin- ear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauder’s fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.
This paper deals with the analysis of an instationary drift-diffusion model for organic semicon- ductor devices including Gauss–Fermi statistics and application-specific mobility functions. The charge transport in organic materials is realized by hopping of carriers between adjacent ener- getic sites and is described by complicated mobility laws with a strong nonlinear dependence on temperature, carrier densities and the electric field strength.
To prove the existence of global weak solutions, we consider a problem with (for small den- sities) regularized state equations on any arbitrarily chosen finite time interval. We ensure its solvability by time discretization and passage to the time-continuous limit. Positive lower a priori estimates for the densities of its solutions that are independent of the regularization level en- sure the existence of solutions to the original problem. Furthermore, we derive for these solutions global positive lower and upper bounds strictly below the density of transport states for the densi- ties. The estimates rely on Moser iteration techniques.
This article deals with the spectra of Laplacians of weighted graphs. In this context, two objects are of fundamental importance for the dynamics of complex networks: the second eigenvalue of such a spectrum (called algebraic connectivity) and its associated eigenvector, the so-called Fiedler vector. Here we prove that, given a Laplacian matrix, it is possible to perturb the weights of the existing edges in the underlying graph in order to obtain simple eigenvalues and a Fiedler vector composed of only non-zero entries. These structural genericity properties with the constraint of not adding edges in the underlying
graph are stronger than the classical ones, for which arbitrary structural perturbations are allowed. These results open the opportunity to understand the impact of structural changes on the dynamics of complex systems.
Chance constraints represent a popular tool for finding decisions that enforce a
robust satisfaction of random inequality systems in terms of probability. They
are widely used in optimization problems subject to uncertain parameters as they
arise in many engineering applications. Most structural results of chance constraints (e.g., closedness, convexity, Lipschitz continuity, differentiability etc.) have been formulated in a finite-dimensional
setting. The aim of this paper is to generalize some of these well-known semi-continuity and convexity properties to a setting of control problems
subject to (uniform) state chance constraints.
We study linear dissipative Hamiltonian (DH) systems with real constant coefficients that arise in energy based modeling of dynamical
systems. In this paper we analyze when such a system is on the boundary
of the region of asymptotic stability, i.e., when it has purely imaginary eigenvalues,
or how much the dissipation term has to be perturbed to be on this boundary. For unstructured systems the explicit construction of the \emph{real distance to instability (real stability radius)} has been a challenging problem. In this paper, we analyze this real distance under different structured perturbations to the dissipation term that preserve the DH structure and we derive explicit formulas for this distance in terms of low rank perturbations. We also show (via numerical examples) that under real structured perturbations to the dissipation the asymptotical
stability of a DH system is much more robust than for unstructured perturbations.
Dissipative Hamiltonian (DH) systems are an important concept in energy based modeling of dynamical
systems. One of the major advantages of the DH formulation is that the system encodes system
properties in an algebraic way in the system. Making use of the structure,
it is easy to see that DH systems are stable. In this paper
the question is discussed when a linear constant coefficient DH system is on the boundary
of the region of asymptotic stability, i.e., when it has purely imaginary eigenvalues,
or how much it has to be perturbed to be on this boundary. For unstructured systems this distance to instability (stability radius) is well-understood. In this paper,
explicit formulas for this distance under structure preserving perturbations are determined.
It is also shown (via numerical examples) that under structured perturbations the asymptotical
stability of a DH system is much more robust than for unstructured perturbations, since the
distance can be much larger.
In this paper, we introduce and study analytically a vectorial Cahn-Hilliard reaction model coupled with rate-dependent damage processes. The recently proposed Cahn-Hilliard reaction model can e.g. be used to describe the behavior of electrodes of lithium-ion batteries as it includes both the intercalation reactions at the surfaces and the separation into different phases. The coupling with the damage process allows considering simultaneously the evolution of a damage field, a second important physical effect occurring during the charging or discharging of lithium-ion batteries.
Mathematically, this is realized by a Cahn-Larché system with a non-linear Newton boundary condition for the chemical potential and a doubly non-linear differential inclusion for the damage evolution. We show that this system possesses an underlying generalized gradient structure which incorporates the non-linear Newton boundary condition. Using this gradient structure and techniques from the field of convex analysis we are able to prove constructively the existence of weak solutions of the
coupled PDE system.
We consider a non-isothermal multi-phase field model.
We subsequently discretize implicitly in time and with
linear finite elements. The arising algebraic problem is
formulated in two variables where one is the multi-phase
field, and the other contains the inverse temperature field.
We solve this saddle point problem numerically by a
non-smooth Schur-Newton approach using truncated
non-smooth Newton multigrid methods. An application in
grain growth as occurring in liquid phase crystallization
of silicon is considered.
Structure-preserving generic low-rank perturbations are studied for classes of structured matrix pencils, including real symmetric, complex symmetric, and complex Hermitian pencils. For singular pencils it is analyzed which characteristic quantities stay invariant in the perturbed canonical form, and it is shown that the regular part of a structured matrix pencil is not affected by generic perturbations of rank one. When the rank one perturbations involve a scaling parameter, the behavior of the canonical forms in dependence of this parameter is analyzed as well.
We study non-isothermal nucleation and growth phase transformations, which are described by a generalized Avrami model for the phase transition coupled with an energy balance to account for recalescence
effects. The main novelty of our work is the identification of temperature dependent nucleation rates. We prove that such rates can be uniquely identified from measurements in a subdomain and apply an optimal control approach to develop a numerical strategy for its computation.