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Drift-diffusion modeling, analysis and simulation of organic semiconductor devices

Please always quote using this URN:urn:nbn:de:0296-matheon-14294
  • We discuss drift-diffusion models for charge-carrier transport in organic semiconductor de- vices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The for- mer leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlin- ear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauder’s fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.

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Metadaten
Author:Duy-Hai Doan, Annegret Glitzky, Matthias Liero
URN:urn:nbn:de:0296-matheon-14294
Referee:Alexander Mielke
Document Type:Preprint, Research Center Matheon
Language:English
Date of first Publication:2019/01/31
Release Date:2019/01/31
Institute:Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS)
Project:C Energy and Materials (Production) / C-SE18 Models for heat and charge-carrier flow in organic electronics
MSC-Classification:65-XX NUMERICAL ANALYSIS / 65Nxx Partial differential equations, boundary value problems / 65N08 Finite volume methods
78-XX OPTICS, ELECTROMAGNETIC THEORY (For quantum optics, see 81V80) / 78Axx General / 78A35 Motion of charged particles
Preprint Number:1126
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