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Electronic structure and optoelectronic properties of strained InAsSb/GaSb multi quantum-wells

Please always quote using this URN:urn:nbn:de:0296-matheon-4541
  • A study of the optical properties of a set of InAsxSb1-x/Al0.15In0.85As0.77Sb0.23/GaSb multiple quantum-wells (for x between 0.82 and 0.92) with build-in strains in the -0.62% to +0.05%-range is presented. The energy of the lowest quantum-confined optical transition is calculated by kp perturbation theory and experimentally determined by absorption measurements. Stokes shift of photoluminescence, photocurrent and of the emission from light emitting devices against the absorption edge of the quantum-well are quantified. The impact of the decreasing carrier confinement in the InAsxSb1-x quantum well system with increasing mole fraction is analyzed theoretically, and experimentally demonstrated by photoluminescence measurement. Our results allow for the improvement of optoelectronic devices, in particular for tailoring emission spectra of light emitting diodes.

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Metadaten
Author:Thomas Koprucki, Michael Baro, Priv.-Doz. Dr. Uwe Bandelow, Tran Q. Tien, Fritz Weik, Jens W. Tomm, Markus Grau, Markus-Christian Amann
URN:urn:nbn:de:0296-matheon-4541
Referee:Alexander Mielke
Document Type:Preprint, Research Center Matheon
Language:English
Date of first Publication:2008/02/19
Release Date:2008/01/02
Tag:
Institute:Weierstraß-Institut für Angewandte Analysis und Stochastik (WIAS)
MSC-Classification:78-XX OPTICS, ELECTROMAGNETIC THEORY (For quantum optics, see 81V80) / 78Axx General / 78A60 Lasers, masers, optical bistability, nonlinear optics [See also 81V80]
82-XX STATISTICAL MECHANICS, STRUCTURE OF MATTER / 82Dxx Applications to specific types of physical systems / 82D37 Semiconductors
Preprint Number:441
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