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A 1D coupled Schroedinger drift-diffusion model including collisions

Please always quote using this URN:urn:nbn:de:0296-matheon-1288
  • We consider a one–dimensional coupled stationary Schrödinger drift–diffusion model for quantum semiconductor device simulations. The device domain is decomposed into a part with large quantum effects (quantum zone) and a part where quantum effects are negligible (classical zone). We give boundary conditions at the classic–quantum interface which are current preserving. Collisions within the quantum zone are introduced via a Pauli master equation. To illustrate the validity we apply the model to three resonant tunneling diodes

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Metadaten
Author:Michael Baro, Naoufel Ben Abdallah, Pierre Degond, Asma El Ayyadi
URN:urn:nbn:de:0296-matheon-1288
Referee:Roswitha März
Document Type:Preprint, Research Center Matheon
Language:English
Date of first Publication:2004/04/26
Release Date:2004/04/26
Preprint Number:120
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