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A 1D coupled Schroedinger drift-diffusion model including collisions
Please always quote using this URN:urn:nbn:de:0296-matheon-1288
- We consider a one–dimensional coupled stationary Schrödinger drift–diffusion model for quantum semiconductor device simulations. The device domain is decomposed into a part with large quantum effects (quantum zone) and a part where quantum effects are negligible (classical zone). We give boundary conditions at the classic–quantum interface which are current preserving. Collisions within the quantum zone are introduced via a Pauli master equation. To illustrate the validity we apply the model to three resonant tunneling diodes
Author: | Michael Baro, Naoufel Ben Abdallah, Pierre Degond, Asma El Ayyadi |
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URN: | urn:nbn:de:0296-matheon-1288 |
Referee: | Roswitha März |
Document Type: | Preprint, Research Center Matheon |
Language: | English |
Date of first Publication: | 2004/04/26 |
Release Date: | 2004/04/26 |
Preprint Number: | 120 |