TY - GEN A1 - Baro, Michael A1 - Ben Abdallah, Naoufel A1 - Degond, Pierre A1 - El Ayyadi, Asma T1 - A 1D coupled Schroedinger drift-diffusion model including collisions N2 - We consider a one–dimensional coupled stationary Schrödinger drift–diffusion model for quantum semiconductor device simulations. The device domain is decomposed into a part with large quantum effects (quantum zone) and a part where quantum effects are negligible (classical zone). We give boundary conditions at the classic–quantum interface which are current preserving. Collisions within the quantum zone are introduced via a Pauli master equation. To illustrate the validity we apply the model to three resonant tunneling diodes Y1 - 2004 UR - https://opus4.kobv.de/opus4-matheon/frontdoor/index/index/docId/128 UR - https://nbn-resolving.org/urn:nbn:de:0296-matheon-1288 ER -