TY - GEN A1 - Doan, Duy-Hai A1 - Glitzky, Annegret A1 - Liero, Matthias T1 - Drift-diffusion modeling, analysis and simulation of organic semiconductor devices N2 - We discuss drift-diffusion models for charge-carrier transport in organic semiconductor de- vices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The for- mer leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlin- ear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauder’s fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics. Y1 - 2019 UR - https://opus4.kobv.de/opus4-matheon/frontdoor/index/index/docId/1429 UR - https://nbn-resolving.org/urn:nbn:de:0296-matheon-14294 ER -