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Thermal impedance evaluation of optimized PCB-based GaN HEMT Single-ChipPrepackage using VGS Method

  • This study evaluates the measurement of the thermal resistance and impedance of GaN HEMTs packages with gatesource voltage (VGS) for junction temperature measurement. First, calibration measurement of VGS vs temperature is performed in an oven. Large deviations from chip to chip require that each device is calibrated separately. Zth is measured for an experimental single-chip prepackage (SCP), developed in our lab, and a commercial reference package (GaNpx). The measured junction to ambient thermal resistance of the SCP is 35% lower compared to the reference. This is caused by a copper heat spreader integrated in the package. The thermal resistance of multiple packages attached on one PCB is also performed. This measurement indicates a maximum difference of 35%. This difference remained the same in several experiments with two thermal interface materials and pressure levels.

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Metadaten
Author:Milkias Ghebreslassie, Ankit Bhushan Sharma, Till HuesgenORCiD
Identifier:978-3-96144-166-2 OPAC HS OPAC extern
Parent Title (German):Elektronische Baugruppen und Leiterplatten EBL 2022: DVS-Berichte, Band: 375
Publisher:DVS Media GmbH
Place of publication:Düsseldorf
Document Type:conference proceeding (article)
Conference:Elektronische Baugruppen und Leiterplatten EBL 2022, Fellbach
Language:German
Year of first Publication:2022
Tag:GaNmsPEBB
Number of pages:6 Seiten
First Page:43
Last Page:48
Institutes:Fakultät Elektrotechnik
Research focus:FSP1: Energie
FSP3: Produktion
Publication Lists:Huesgen, Till
Sharma, Ankit Bhushan
Publication reviewed:begutachtet
Release Date:2022/06/29
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