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PCB Embedded Power Package with Reinforced Top-Side Chip Contacts

  • This paper presents a novel approach to embed power semiconductor devices into a printed circuit board. Here, IGBTs and diodes with reinforced top side chip contact are used in an IGBT half bridge with 25 A / 1200 V rating. Thermal simulations highlight the improved thermal impedance caused by the reinforced top contact and the benefits of the insulated copper substrate compared to a commercial DBC-based reference module. The fabrication process is discussed in detail and preliminary test results are presented. The results of the thermal characterization support the theoretical considerations.

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Metadaten
Author:Ankit Bhushan Sharma, Dheeman Paul, Marvin Kreck, Yasser Rahmoun, Peter Anders, Michael Gruber, Till HuesgenORCiD
DOI:https://doi.org/10.1109/ESTC.2016.7764706
Identifier:978-1-5090-1402-6 OPAC HS OPAC extern
Parent Title (German):2016 6th Electronic System-Integration Technology Conference (ESTC)
Publisher:IEEE
Document Type:conference proceeding (article)
Conference:2016 6th Electronic System-Integration Technology Conference (ESTC), 13-15 September 2016, Grenoble, France
Language:English
Year of first Publication:2016
Release Date:2021/01/19
Tag:LILIPUT
Number of pages:5 Seiten
Institutes:Fakultät Elektrotechnik
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften
Research focus:FSP3: Produktion
Publication Lists:Huesgen, Till
Sharma, Ankit Bhushan
Research Project:Liliput – Leiterplattenintegrierter Dreipunktwechselrichter
Publication reviewed:begutachtet
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