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Asymmetric Packages for Optimal Performance of GaN-HEMT using PCB Fabrication Technology

  • This paper proposes an asymmetric Single-Chip-Prepackage (SCP) with thick Cu substrate for the optimum electrical and thermal performance of the GaN-HEMT devices. Additionally, the package features a Ni-based integrated thermistor. Laboratory demonstrators have been fabricated using PCB embedding technology. A full electrical characterization of the packaged device indicates full functionality. The temperature coefficient of the integrated temperature sensor is 𝛼 = 0.00541 /𝐾. Thermal characterization of the SCP shows a junction to heatsink thermal resistance Rth,jh = 3.34 K/W, which is 36 % less than the commercial reference device. A silver sinter based assembly process for system integration of SCP is introduced in view of a planar thermal interface. In a 300 kHz 48 V to 24 V buck-converter operation with 60 Arms output current, a 98% efficiency is achieved.

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Metadaten
Author:Ankit Bhushan Sharma, Julian WeimerORCiD, Dominik KochORCiD, Ingmar KallfassORCiDGND, Till HuesgenORCiD
Identifier:978-3-8007-5515-8 OPAC HS OPAC extern
Parent Title (English):PCIM Europe digital days 2021
Subtitle (English):International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings, 3 - 7 May 2021
Publisher:VDE Verlag
Place of publication:Berlin
Document Type:conference proceeding (article)
Conference:PCIM Europe 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 3, 2021 - May6, 2021, Nuremberg, Germany
Language:English
Year of first Publication:2021
Tag:DrGaN; begutachtet
Article Number:112
Number of pages:8 Seiten
First Page:1
Last Page:8
Institutes:Fakultät Elektrotechnik
Research focus:FSP1: Energie
FSP3: Produktion
Publication Lists:Huesgen, Till
Sharma, Ankit Bhushan
Publication reviewed:begutachtet
Release Date:2021/06/15
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