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Printed circuit board embedded power semiconductors: A technology review

  • Embedding power semiconductor devices into printed circuit boards (PCB) provides several benefits compared to conventional packaging technologies. Integrating the semiconductor dies into the circuit board reduces the converter size. This results in short current loops, enabling low interconnection resistances and parasitic inductances. Both contribute to a higher system-level efficiency, as conduction and switching losses are reduced. Moreover, the use of thick Cu substrates allows efficient heat removal, due to a low thermal resistance. Therefore, PCB embedding has received a lot of attention in the power electronics community for more than a decade. This article aims to provide a comprehensive review of the scientific literature on the topic ranging from basic fabrication technology over module or system-level demonstrators for electrical and thermal testing to reliability studies. Performance indicators, such as the commutation loop inductance Lσ, the chip area independent thermal resistance Rth × Achip, allow a comparison ofEmbedding power semiconductor devices into printed circuit boards (PCB) provides several benefits compared to conventional packaging technologies. Integrating the semiconductor dies into the circuit board reduces the converter size. This results in short current loops, enabling low interconnection resistances and parasitic inductances. Both contribute to a higher system-level efficiency, as conduction and switching losses are reduced. Moreover, the use of thick Cu substrates allows efficient heat removal, due to a low thermal resistance. Therefore, PCB embedding has received a lot of attention in the power electronics community for more than a decade. This article aims to provide a comprehensive review of the scientific literature on the topic ranging from basic fabrication technology over module or system-level demonstrators for electrical and thermal testing to reliability studies. Performance indicators, such as the commutation loop inductance Lσ, the chip area independent thermal resistance Rth × Achip, allow a comparison of different approaches and benchmarking with conventional power modules. Several publications report stray inductances below 1 nH and chip area independent thermal resistances in the range of 20…30 mm²K/W.show moreshow less

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Metadaten
Author:Till HuesgenORCiD
DOI:https://doi.org/10.1016/j.pedc.2022.100017
Identifier:2772-3704 OPAC HS OPAC extern
Parent Title (English):Power Electronic Devices and Components
Publisher:Elsevier
Place of publication:Amsterdam
Document Type:Article
Language:English
Date of Publication (online):2022/08/13
Year of first Publication:2022
Volume:2022
Issue:3
Article Number:100017
Number of pages:15 Seiten
First Page:1
Last Page:15
Institutes:Fakultät Elektrotechnik
Open Access:open_access
Research focus:FSP1: Energie
FSP3: Produktion
Publication Lists:Huesgen, Till
Publication reviewed:begutachtet
Licence (German):Creative Commons - CC BY-NC-ND - Namensnennung - Nicht kommerziell - Keine Bearbeitungen 4.0 International
Release Date:2022/11/10
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