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Reducing the Impact of Skin Effect Induced Measurement Errors in M-Shunts by Deliberate Field Coupling

  • The ever-increasing switching speed of semiconductor devices requires a precise measurement of steep current transients. The M-shunt concept offers high signal fidelity, good cooling, and simple manufacturing. Depending on the resistive material used, temperature as well as skin and proximity effects impede static and dynamic measurements to a different degree. A step forward has been derived from the ideal coaxial shunt, so far, a purely theoretical concept, which is hardly producible due to its sophisticated structure. By transferring this concept to the M-shunt structure with its improved PCB manufacturing technologies it can now be realised in practice. Nevertheless, the calibration and the correct degree of delay compensation remain challenging and are investigated more closely within this paper. Furthermore, it will be discussed why the conventional method of bandwidth determination doesn't work for the M-shunt structure. In addition to the low inductance introduced into the load circuit, the high bandwidth of the shunts couldThe ever-increasing switching speed of semiconductor devices requires a precise measurement of steep current transients. The M-shunt concept offers high signal fidelity, good cooling, and simple manufacturing. Depending on the resistive material used, temperature as well as skin and proximity effects impede static and dynamic measurements to a different degree. A step forward has been derived from the ideal coaxial shunt, so far, a purely theoretical concept, which is hardly producible due to its sophisticated structure. By transferring this concept to the M-shunt structure with its improved PCB manufacturing technologies it can now be realised in practice. Nevertheless, the calibration and the correct degree of delay compensation remain challenging and are investigated more closely within this paper. Furthermore, it will be discussed why the conventional method of bandwidth determination doesn't work for the M-shunt structure. In addition to the low inductance introduced into the load circuit, the high bandwidth of the shunts could be demonstrated, as well as the possibility to extend this by design rules. Supplemented by the advantages of the lower load inductance, the M-shunt will become the tool of choice for characterising switching transients at least up to 200 MHz required bandwidth eventually. Although it is obviously difficult to improve the 3 dB bandwidth with suitable design rules, the range of nearly entirely unaffected measurement frequencies (e.g. < 1 dB) can be significantly extended by limited coupling. For even higher frequencies, measurements of the current M-shunt models, as well as for the coaxial shunts used as reference, should be corrected by post processing to get precise measurement results.show moreshow less

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Metadaten
Author:Hauke Lutzen, Jonas Müller, Vladimir Polezhaev, Till HuesgenORCiD, Nando Kaminski
URL / DOI:https://ieeexplore.ieee.org/document/9907594
Identifier:978-9-0758-1539-9 OPAC HS OPAC extern
Parent Title (English):24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
Publisher:IEEE
Place of publication:Piscataway
Document Type:conference proceeding (article)
Conference:24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 5th-9th September 2022, Hannover, Germany
Language:English
Year of first Publication:2022
Tag:MShunt2
Article Number:9907594
Number of pages:11 Seiten
Institutes:Fakultät Elektrotechnik
Research focus:FSP1: Energie
FSP3: Produktion
Publication Lists:Huesgen, Till
Polezhaev, Vladimir
Publication reviewed:begutachtet
Release Date:2022/11/14
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