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Optical properties of defects in nitride semiconductors

  • Group III nitrides are promising materials for light emitting diodes (LEDs). The occurrence of structural defects strongly affects the efficiency of these LEDs. We investigate the optical properties of basal plane stacking faults (BFSs), and the assignment of specific spectral features to distinct defect types by direct correlation of localized emission bands measured by cathodoluminescence in a scanning electron microscope with defects found in high resolution (scanning) transmission electron microscopy and electron beam induced current at identical sample spots. Thus, we are able to model the electronic structure of BSFs addressing I-1, I-2, and E type BSFs in GaN and AlGaN with low Al content. We find hints that BSFs in semipolar AlGaN layers cause local changes of the Al content, which strongly affects the usability of AlGaN as an electron blocking layer in nitride based LEDs.

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Metadaten
Author:Ingo Tischer, Matthias Hocker, Benjamin Neuschl, Manfred Madel, Martin Feneberg, Martin SchirraGND, Manuel Frey, Manuel Knab, Pascal Maier, Thomas Wunderer, Robert A. R. Leute, Junjun Wang, Ferdinand Scholz, Johannes Biskupek, Jörg Bernhard, Ute Kaiser, Ulrich Simon, Levin Dieterle, Heiko Groiss, Erich Müller, Dagmar Gerthsen, Klaus Thonke
DOI:https://doi.org/10.1557/jmr.2015.273
Identifier:2044-5326 OPAC HS OPAC extern
Parent Title (English):Journal of Materials Research
Publisher:Springer
Place of publication:Berlin
Document Type:Article
Language:English
Date of Publication (online):2015/09/23
Year of first Publication:2015
Volume:Volume 30
Issue:Issue 20
Number of pages:14 Seiten
First Page:2977
Last Page:2990
Institutes:Fakultät Maschinenbau
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften
Publication Lists:Müller, Erich
Schirra, Martin
Publication reviewed:begutachtet
Release Date:2019/11/26
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