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An Advanced Integrated Cooling Solution for High Voltage and Power Density Modules

  • This study investigated the thermal performance of a packaging solution designed to manage the electrical isolation and cooling of high voltage ( ) SiC power semiconductor > 3300 V devices. The proposed packaging merges the ceramic substrate and the heat exchanger into a single component, streamlining the overall design. Specifically, a novel heat exchanger is developed for a multi-chip module (20 kV), utilizing a combination of jet impingement and channel- flow cooling techniques. Computational fluid dynamics (CFD) simulations and experimental validation are conducted on a multi-chip module to assess the thermal resistance of this new cooling solution. The results demonstrate a low thermal resistivity of 0.118 cm2K/W, indicating the potential for improved cooling performance in high voltage and power density semiconductor applications.

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Metadaten
Author:Amin Salim Obaid Al-Hinaai, Till HuesgenORCiD, Cyril Buttay, Eric Vagnon, Ildiko Ettinger, Besar Asllani, Céline Combettes
DOI:https://doi.org/10.1109/THERMINIC60375.2023.10325867
Identifier:979-8-3503-1862-3 OPAC HS OPAC extern
Identifier:979-8-3503-1863-0 OPAC HS OPAC extern
Parent Title (English):2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
Publisher:IEEE
Document Type:conference proceeding (article)
Conference:29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 27-29 September 2023, Budapest, Hungary
Language:English
Date of Publication (online):2023/11/24
Year of first Publication:2023
Tag:ARCHIVE
Number of pages:6 Seiten
Institutes:Fakultät Elektrotechnik
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 60 Technik
Research focus:FSP1: Energie
FSP3: Produktion
Publication Lists:Huesgen, Till
Al-Hinaai, Amin
Research Project:ARCHIVE – ARchitecture Ceramic for HIgh Voltage power Electronics
Publication reviewed:begutachtet
Release Date:2024/03/04
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